Display panel and display device including the same

ABSTRACT

A display device includes a display panel including a display layer having light-emitting elements on the substrate, and a sensor electrode layer on the display layer. The sensor electrode layer includes sensor electrodes in a sensor area, sensor lines electrically connected to the sensor electrodes and a first conductive pattern spaced apart from the sensor lines and sensor electrodes. The sensor lines and the first conductive pattern are in a sensor peripheral area adjacent to the sensor area. The first conductive pattern is an antenna.

CROSS REFERENCE TO RELATED APPLICATION(S)

This is a divisional application of U.S. patent application Ser. No.16/884,844, filed May 27, 2020 (now U.S. Pat. No. 11,275,473), thedisclosure of which is incorporated herein by reference in its entirety.U.S. patent application Ser. No. 16/884,844 claims priority to andbenefit of Korean Patent Application No. 10-2019-0069831 under 35 U.S.C.§ 119, filed on Jun. 13, 2019, and Korean Patent Application No.10-2019-0092018 under 35 U.S.C. § 119, filed on Jul. 29, 2019, in theKorean Intellectual Property Office, the entire contents of which areincorporated herein by reference.

BACKGROUND 1. Technical Field

The disclosure relates to a display panel and a display device includingthe same.

2. Description of the Related Art

As the information-oriented society evolves, various demands areever-increasing for display devices. For example, display devices arebeing utilized in a variety of electronic devices such as smart phones,digital cameras, laptop computers, navigation devices, and smarttelevisions.

A display device may include an antenna that may transmit and receivewireless electromagnetic waves for wireless communications. For example,a display device may include an antenna for near field communicationssuch as a radio frequency identification (RFID) tag as well asfourth-generation (4G) mobile communications and fifth-generation (5G)mobile communications such as long-term evolution (LTE). Therefore,there may be a variety of the frequency bands of the wirelesselectromagnetic waves that may be transmitted and received depending onthe communication types, and the shapes or lengths of the antennas mayvary depending on the frequency bands of the wireless electromagneticwaves. Therefore, a display device may require different antennas fordifferent frequency bands of wireless electromagnetic waves. For thisreason, a display panel including a conductive pattern for implementingan antenna has been recently studied.

It is to be understood that this background of the technology sectionis, in part, intended to provide useful background for understanding thetechnology. However, this background of the technology section may alsoinclude ideas, concepts, or recognitions that were not part of what wasknown or appreciated by those skilled in the pertinent art prior to acorresponding effective filing date of the subject matter disclosedherein.

SUMMARY

Embodiments may provide a display panel including a conductive patternas an antenna.

Embodiments may also provide a display device including a conductivepattern as an antenna.

Additional features of embodiments will be set forth in the descriptionwhich follows, and in part may be apparent from the description, or maybe learned by practice of an embodiment herein.

According to an embodiment, a display device may include a display panelincluding a display layer including light-emitting elements disposed ona substrate, and a sensor electrode layer disposed on the display layer.The sensor electrode layer may include sensor electrodes disposed in asensor area, sensor lines electrically connected to the sensorelectrodes, and a first conductive pattern spaced apart from the sensorlines and sensor electrodes. The sensor lines and the first conductivepattern may be disposed in a sensor peripheral area adjacent to thesensor area, and the first conductive pattern may be an antenna.

The first conductive pattern and the sensor electrodes may be disposedon a same layer.

A second conductive pattern may be disposed between the first conductivepattern and the display layer.

The first conductive pattern may be disposed in a sensor peripheral areaadjacent to a first side of the sensor area, a sensor peripheral areaadjacent to a second side of the sensor area, and a sensor peripheralarea adjacent to a third side of the sensor area.

Sensor pads may be disposed adjacent to a side of the substrate andelectrically connected to the sensor lines; and a conductive pad may bedisposed adjacent to the side of the substrate and electricallyconnected to the first conductive pattern.

The sensor electrode layer may include sensor pads disposed adjacent toa first side of the substrate and electrically connected to the sensorlines, and the first conductive pattern may be disposed adjacent to asecond side of the substrate opposite to the first side, a third side ofthe substrate connecting the first side with the second side of thesubstrate, and a corner between the second side and the third side ofthe substrate.

The substrate may include a second bending area extended from a side ofthe sensor peripheral area, and a second pad area extended from thesecond bending area, and the first conductive pattern may be disposed inthe second pad area.

The display device may include a radio frequency driver electricallyconnected to the first conductive pattern and processing a radiofrequency signal transmitted or received from or to the first conductivepattern.

The radio frequency driver may be disposed in the second pad area.

The substrate may include a first bending area extended from anotherside of the sensor peripheral area, and a first pad area extended fromthe first bending area. A display driver may be disposed in the firstpad area.

The substrate may include a first bending area extended from the side ofthe sensor peripheral area, and a first pad area extended from the firstbending area. A display driver may be disposed in the first pad area.

A gap may be disposed between the first bending area and the secondbending area and between the first pad area and the second pad area.

A battery may be disposed below the display panel, wherein the firstconductive pattern may be electrically connected to the battery.

A thickness of the first conductive pattern may be larger than athickness of each of the sensor electrodes and a thickness of each ofthe sensor lines.

A thickness of the first conductive pattern may be equal to or greaterthan about 2,150 μm.

The sensor electrodes may include sensing electrodes electricallyconnected to one another in a first direction, driving electrodeselectrically connected to one another in a second direction, the seconddirection intersecting the first direction, a first connection unitelectrically connected between the driving electrodes adjacent to oneanother in the second direction and disposed on a layer different fromthe sensing electrodes and the driving electrodes; and a secondconnection unit electrically connected between the sensing electrodesadjacent to one another in the first direction and disposed on a samelayer as the sensing electrodes and the driving electrodes.

The display device may include a second conductive pattern disposedbetween the first conductive pattern and the display layer, wherein thefirst conductive pattern may be disposed on the same layer as thesensing electrodes and the driving electrodes, and the second conductivepattern may be disposed on the same layer as the first connection unit.

The first conductive pattern may be disposed in the sensor peripheralarea adjacent to a side of the sensor area, and the sensor electrodelayer may include a ground line disposed between the first conductivepattern and the sensor area. According to an embodiment, a displaydevice may include a display panel including a display layer includinglight-emitting elements disposed on a substrate, and a sensor electrodelayer disposed on the display layer. The sensor electrode layer mayinclude sensor electrodes; sensor lines electrically connected to thesensor electrodes; and at least one first conductive pattern spacedapart from the sensor lines and sensor electrodes. The sensor electrodesand the at least one first conductive pattern may be disposed in asensor area. The sensor lines may be disposed in a sensor peripheralarea adjacent to the sensor area, and the at least one first conductivepattern may be an antenna.

The at least one first conductive pattern and the sensor electrodes maybe disposed on a same layer.

The at least one first conductive pattern may include a plurality offirst conductive patterns which are surrounded by the sensor electrodes,respectively.

The sensor electrodes may include sensing electrodes electricallyconnected to one another in a first direction; driving electrodeselectrically connected to one another in a second direction, the seconddirection intersecting the first direction, a first connection unitelectrically connected between the driving electrodes adjacent to oneanother in the second direction and disposed on a layer different fromthe sensing electrodes and the driving electrodes, and a secondconnection unit electrically connected between the sensing electrodesadjacent to one another in the first direction and disposed on a samelayer as the sensing electrodes and the driving electrodes.

The at least one first conductive pattern may include a plurality offirst conductive patterns, and each of the plurality of first conductivepatterns may be surrounded by one of the sensing electrodes or one ofthe driving electrodes.

The at least one first conductive pattern may include a plurality offirst conductive patterns, the display device may include a thirdconnection unit electrically connected between the first conductivepatterns adjacent to each other in a first direction; and a fourthconnection unit electrically connected between the first conductivepatterns adjacent to each other in a second direction, the seconddirection intersecting the first direction.

The third connection unit may include a first sub connection unitdisposed on a same layer as the sensing electrodes and the drivingelectrodes, and a second sub connection unit disposed on a same layer asthe first connection unit.

The fourth connection unit may be disposed on a same layer as thesensing electrodes and the driving electrodes.

The at least one first conductive pattern may include a plurality offirst conductive patterns, and the sensor electrode layer may include aguard pattern disposed between one of the plurality of first conductivepatterns and one of the sensing electrodes or one of the drivingelectrodes.

The at least one first conductive pattern may be surrounded by the guardpattern, and the guard pattern may be surrounded by the sensingelectrodes or the driving electrodes.

The guard pattern, the sensing electrodes, and the driving electrodesmay be disposed on a same layer.

The guard pattern may include a first sub guard pattern disposed on thesame layer as the sensing electrodes and the driving electrodes, and asecond sub guard pattern disposed on a same layer as the firstconnection unit.

The sensor electrodes may include proximity sensing electrodes spacedapart from the driving electrodes and the sensing electrodes anddisposed on a same layer as the sensing electrodes and the drivingelectrodes, a fifth connection unit electrically connected between theproximity sensing electrodes adjacent to each other in the firstdirection, and a sixth connection unit electrically connected betweenthe proximity sensing electrodes adjacent to each other in the seconddirection.

Each of the proximity sensing electrodes may be surrounded by one of thesensing electrodes or one of the driving electrodes.

The fifth connection unit may include a first sub connection unitdisposed on a same layer as the sensing electrodes and the drivingelectrodes, and a second sub connection unit disposed on a same layer asthe first connection unit.

The sixth connection unit may be disposed on a same layer as the sensingelectrodes and the driving electrodes.

The first conductive pattern and the sensor electrodes may not overlapemission areas of the light-emitting elements.

The sensor electrodes may include a transparent conductive material, andthe at least one first conductive pattern and the sensor lines mayinclude an opaque conductive material.

The at least one first conductive pattern may overlap the emission areasof the light-emitting elements.

According to an embodiment, a display panel may include a firstelectrode and a second electrode disposed on a substrate and spacedapart from each other, a first contact electrode electrically connectedto the first electrode, a second contact electrode electricallyconnected to the second electrode, a light-emitting element disposedbetween the first contact electrode and the second contact electrode,and a first conductive pattern that may not overlap the light-emittingelement in a thickness direction of the substrate. The first conductivepattern may be an antenna.

The display panel may include a first insulating layer disposed on apart of the first electrode and the second electrode, a secondinsulating layer disposed on the light-emitting element, and a thirdinsulating layer disposed on the first contact electrode, wherein thefirst contact electrode and the second contact electrode may be disposedon the first insulating layer and the second insulating layer,respectively, and the second contact electrode may be disposed on thethird insulating layer.

The first conductive pattern and the second contact electrode may bedisposed on a same layer.

The first conductive pattern and the first contact electrode may bedisposed on a same layer.

The first conductive pattern, the first electrode, and the secondelectrode may be disposed on a same layer.

The display panel may include a shielding electrode disposed between thefirst insulating layer and the first contact electrode, wherein thefirst conductive pattern may be disposed on a same layer as theshielding electrode.

The display panel may include a first insulating layer disposed on apart of the first electrode and the second electrode; a secondinsulating layer disposed on the light-emitting element; and a thirdinsulating layer disposed on the first contact electrode and the secondcontact electrode, wherein the first contact electrode and the secondcontact electrode may be disposed on the first insulating layer and thesecond insulating layer, respectively.

The first conductive pattern, the first contact electrode, and thesecond contact electrode may be disposed on a same layer.

The display panel may include an encapsulation layer disposed on thesecond contact electrode and the third insulating layer, wherein thefirst conductive pattern may be disposed on the encapsulation layer.

The display panel may include a second conductive pattern disposedbetween the first conductive pattern and the encapsulation layer, and afourth insulating layer disposed between the first conductive patternand the second conductive pattern.

The first conductive pattern may include slits.

According to an embodiment, a display panel may include a pixel unitcomprising a plurality of sub-pixels disposed on a substrate, atransmissive portion disposed on a side of the pixel unit, and a firstconductive pattern disposed in the transmissive portion. The firstconductive pattern may be an antenna.

The display panel may include a second conductive pattern disposed inthe transmissive portion, the second conductive pattern may overlap thefirst conductive pattern in a thickness direction of the substrate, andmay receive a ground voltage or supply voltage.

Each of the plurality of sub-pixels may include a thin-film transistorincluding an active layer disposed on the substrate, a gate electrodedisposed on a gate insulating layer disposed on at least a part of theactive layer, and a source electrode and a drain electrode disposed onan interlayer dielectric layer disposed on the gate electrode, and alight-emitting element including a first electrode disposed on aplanarization layer disposed on the source electrode and the drainelectrode, an emissive layer disposed on the first electrode, and asecond electrode disposed on the emissive layer.

The first conductive pattern and the first electrode may be disposed ona same layer, and the second conductive pattern and the source electrodeand the drain electrode may be disposed on a same layer.

Each of the plurality of sub-pixels may include a first thin-filmtransistor including a first active layer disposed on the substrate, afirst gate electrode disposed on a first gate insulating layer disposedon at least a part of the first active layer, and a first sourceelectrode and a first drain electrode disposed on a first interlayerdielectric layer disposed on the first gate electrode, a secondthin-film transistor including a light-blocking layer disposed on thefirst interlayer dielectric layer, a second active layer disposed on asecond interlayer dielectric layer disposed on the light-blocking layer,a second gate electrode disposed on a second gate insulating layerdisposed on at least a part of the second active layer, and a secondsource electrode and a second drain electrode disposed on a thirdinterlayer dielectric layer disposed on the second gate electrode, and alight-emitting element including a first electrode disposed on aplanarization layer disposed on the first source electrode, the secondsource electrode, the first drain electrode and the second drainelectrode, an emissive layer disposed on the first electrode; and asecond electrode disposed on the emissive layer.

The first conductive pattern and the first electrode may be disposed ona same layer, and the second conductive pattern and the source electrodeand the drain electrode may be disposed on a same layer.

The display panel may include a mirror area disposed on another side ofthe pixel unit; and a mirror pattern disposed in the mirror area.

The mirror pattern and the first conductive pattern may be disposed on asame layer.

According to an embodiment, a display panel may include a substrateincluding an upper surface and a first side surface extending from theupper surface, a display layer disposed on the substrate and includingpixels in a main display area displaying an image, the main display areaoverlapping the upper surface, a sensor electrode layer disposed on thedisplay layer and including sensor electrodes in a sensor area, thesensor area overlapping the main display area, and a first conductivepattern disposed on the first side surface of the substrate, wherein thefirst conductive pattern may be an antenna.

The first side surface of the substrate may include a first sub displayarea and a first non-display area, the sensor area may overlap the firstsub display area, a sensor peripheral area may be disposed around thesensor area overlap the first non-display area, and the first conductivepattern may be disposed on the first non-display area.

The first conductive pattern and the sensor electrodes may be disposedon a same layer.

The first side surface of the substrate may include a sensor peripheralarea adjacent to the sensor area and include sensor lines electricallyconnected to the sensor electrodes of the sensor area; and an antennaarea where the first conductive pattern may be disposed.

The display panel may include a plurality of through holes penetratingthrough the first side surface of the substrate, the display layer, andthe sensor electrode layer.

The display layer may be disposed on a surface of the first side surfaceof the substrate, and the display panel may include an antenna moduledisposed below the first side surface of the substrate and include thefirst conductive pattern.

The display panel may include a force sensor disposed below the firstside surface of the substrate.

The display panel may include a driving electrode and a sensingelectrode disposed on a first base layer; and a pressure sensing layerdisposed on a second base layer facing the first base layer andoverlapping the driving electrode and the sensing electrode.

The pressure sensing layer may include a polymer resin and metalmicroparticles.

According to an embodiment, a first conductive pattern disposed in asensor peripheral area of a sensor electrode layer of a display panel ina display device may be utilized as a patch antenna for 5G mobilecommunications or an antenna for an RFID tag for near fieldcommunications. Although the wavelength of the electromagnetic wavestransmitted/received to/from the first conductive pattern in 5G mobilecommunications is short, the electromagnetic waves do not need to passthrough metal layers of the display panel. Therefore, theelectromagnetic waves may be stably radiated toward the upper side ofthe display device.

According to an embodiment, by forming or disposing an antenna area in apad area, the antenna area may be increased compared to an antenna areadisposed in a sensor peripheral area. Therefore, the first conductivepattern of the antenna area may be designed more freely.

According to an embodiment, by forming or disposing a second conductivepattern overlapping the first conductive pattern in the thicknessdirection of the display panel and receiving a ground voltage, it may bepossible to prevent implement a patch antenna for 5G mobilecommunications using the first conductive pattern.

According to an embodiment, by forming or disposing a second conductivepattern overlapping the first conductive pattern in the thicknessdirection of the display panel and receiving a ground voltage, it may bepossible to prevent implement a patch antenna for 5G mobilecommunications using the first conductive pattern.

According to an embodiment, a first conductive pattern and a secondconductive pattern for implementing the antenna may be made of the sameor similar material on a same layer as the sensor electrodes of thesensor electrode layer, and thus there is an advantage that noadditional process for forming the first conductive pattern and thesecond conductive pattern in the antenna area may be required.

According to an embodiment, instead of dummy patterns for reducingparasitic capacitance between the second electrode and the sensorelectrodes (the driving electrodes and the sensing electrodes) of theemission material layer, the first conductive patterns utilized as theantenna may be formed or disposed. There is an advantage that noadditional process for forming the first conductive pattern of theantenna area may be required.

According to an embodiment, a guard pattern may be disposed between thesensor electrode (the driving electrode or the sensing electrode) andthe first conductive pattern, so that it may be possible to prevent thatthe sensor electrode (the driving electrode or the sensing electrode)may be affected by electromagnetic waves from the first conductivepattern.

According to an embodiment, the first conductive pattern formed ordisposed in the remaining portion of the wiring area surrounding thethrough hole penetrating the display panel may be utilized as theantenna.

According to an embodiment, a first conductive pattern and a secondconductive pattern for implementing the antenna may be made of the sameor similar material on a same layer as the electrodes of the displaylayer, and thus there is an advantage that no additional process forforming the first conductive pattern and the second conductive patternin the antenna area may be required.

According to an embodiment, when the display panel may be a transparentdisplay panel including transmissive portions or overlaps with sensordevices disposed on a lower surface of the display panel, the firstconductive pattern formed or disposed in the transmissive portions ofthe display panel may be utilized as an antenna.

According to an embodiment, when the display panel comprises an uppersurface and at least one side surface extended from the upper surface,the first conductive pattern formed or disposed in the at least one sidesurface may be utilized as an antenna.

According to an embodiment, when a sensor area is not disposed in atleast one side surface, the antenna area may be increased compared towhen the sensor area may be disposed in at least one side surface.Therefore, the first conductive pattern of the antenna area may bedesigned more freely.

According to an embodiment, in order to increase the design area for theantenna area in at least one side surface, no sensor electrode layer maybe disposed but only the antenna layer may be disposed. In such case, aforce sensor for sensing a user's touch input or a user's pressure maybe disposed in at least one side surface in place of the sensorelectrode layer.

Other features and embodiments may be apparent from the followingdetailed description, the drawings, and the claims.

It is to be understood that both the foregoing description and thefollowing detailed description are not to be construed as limiting of anembodiment as described or claimed herein.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the disclosure, illustrate embodiments:

FIG. 1 is a perspective view of a display device according to anembodiment.

FIG. 2 is an exploded, perspective view of a display device according toan embodiment.

FIG. 3 is a block diagram showing a display device according to anembodiment.

FIG. 4 is a plan view showing a display panel according to anembodiment.

FIG. 5 is a side view showing an example of the display panel of FIG. 4.

FIG. 6 is a plan view showing a display panel according to anembodiment.

FIG. 7 is a side view showing an example of the display panel of FIG. 6.

FIG. 8 is a plan view showing a display panel according to anembodiment.

FIG. 9 is a side view showing an example of the display panel of FIG. 8.

FIG. 10 is a plan view showing a display panel according to anembodiment.

FIG. 11 is a side view showing an example of the display panel of FIG.10 .

FIG. 12 is a plan view showing a display panel according to anembodiment.

FIG. 13 is a side view showing an example of the display panel of FIG.12 .

FIG. 14 is a schematic cross-sectional view showing the display area ofthe display panel and the first area of the second pad area of FIG. 12 .

FIG. 15 is a plan view showing a display panel according to anembodiment.

FIG. 16 is a plan view showing a display panel according to anembodiment.

FIG. 17 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

FIG. 18 is a view showing an example of the sensor driver connected tothe sensor electrodes.

FIG. 19 is an enlarged plan view showing the sensor area of FIG. 18 indetail.

FIG. 20 is an enlarged plan view showing the sensor electrodes and theconnection units of FIG. 19 .

FIG. 21 is a schematic cross-sectional view taken along line I-I′ ofFIG. 20 .

FIG. 22 is an enlarged plan view showing an example of the antenna areaof FIG. 18 .

FIG. 23 is an enlarged plan view showing the first conductive pattern inthe antenna area of FIG. 22 in detail.

FIG. 24 is an enlarged plan view showing an intersection between thefirst conductive patterns of FIG. 22 in detail.

FIG. 25 is a schematic cross-sectional view taken along line II-II′ ofFIG. 24 .

FIG. 26 is a schematic cross-sectional view taken along line II-II′ ofFIG. 24 .

FIG. 27 is a schematic cross-sectional view taken along line II-II′ ofFIG. 24 .

FIG. 28 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

FIG. 29 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

FIG. 30 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

FIG. 31 is a view showing an example of a sensor driver connected tosensor electrodes and a radio frequency driver connected to a firstconductive pattern.

FIG. 32 is an enlarged plan view showing sensor electrodes and a firstconductive pattern of FIG. 30 .

FIG. 33 is a schematic cross-sectional view taken along line III-III′ ofFIG. 32 .

FIG. 34 is a schematic cross-sectional view taken along line III-III′ ofFIG. 32 .

FIG. 35 is a schematic cross-sectional view taken along line III-III′ ofFIG. 32 .

FIG. 36 is an enlarged plan view showing first conductive patterns andsensor electrodes of FIG. 30 .

FIG. 37 is a schematic cross-sectional view taken along line V-V of FIG.36 .

FIG. 38 is a schematic cross-sectional view taken along line V-V of FIG.34 .

FIG. 39 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

FIG. 40 is a view showing an example of a sensor driver connected tosensor electrodes and a radio frequency driver connected to a firstconductive pattern.

FIG. 41 is an enlarged plan view showing first conductive patterns andsensor electrodes of FIG. 39 .

FIG. 42 is a schematic cross-sectional view taken along line VI-VI′ ofFIG. 41 .

FIG. 43 is a view showing an example of a sensor driver and sensordetectors connected to sensor electrodes and an audio frequency driverelectrically connected to the first conductive pattern.

FIG. 44 is a circuit diagram showing the pressure sensing unit of FIG.41 in detail.

FIG. 45 is an enlarged plan view showing the sensor electrodes, forcesensor electrodes and the first conductive pattern of FIG. 39 in detail.

FIG. 46 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

FIG. 47 is an enlarged plan view showing the sensor electrode and thefirst conductive pattern of FIG. 46 .

FIG. 48 is a schematic cross-sectional view taken along line VIII-VIII′of FIG. 47 .

FIG. 49 is a schematic cross-sectional view taken along line VIII-VIII′of FIG. 47 .

FIG. 50 is a schematic cross-sectional view taken along line VIII-VIII′of FIG. 47 .

FIG. 51 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

FIG. 52 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

FIG. 53 is a view showing an example of the sensor driver electricallyconnected to the sensor electrodes and the radio frequency driverelectrically connected to the first conductive pattern of FIG. 52 .

FIG. 54 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

FIG. 55 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

FIG. 56 is a side view showing an example of the display panel of FIG.55 .

FIG. 57 is an enlarged plan view showing the sensor electrodes and theconnection units of FIG. 55 .

FIG. 58 is a schematic cross-sectional view taken along line IX-IX′ ofFIG. 57 .

FIG. 59 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

FIG. 60 is an enlarged plan view showing the through hole, the deadspace and the wiring area of FIG. 59 .

FIG. 61 is an enlarged plan view showing a connection unit between adriving electrode and a driving connection line and a connection unitbetween a sensing electrode and a sensing connection line of FIG. 60 .

FIG. 62 is a schematic cross-sectional view taken along line X-X′ ofFIG. 61 .

FIG. 63 is a schematic cross-sectional view taken along line X-X′ ofFIG. 61 .

FIG. 64 is a schematic cross-sectional view taken along line X-X′ ofFIG. 61 .

FIG. 65 is a plan view showing a display layer of a display panelaccording to an embodiment.

FIG. 66 is a plan view showing an example of the pixels in the displayarea of FIG. 65 .

FIG. 67 is a plan view showing an example of the pixels in the displayarea of FIG. 65 .

FIG. 68 is a perspective view showing one of the light-emitting elementsof FIG. 66 in detail.

FIG. 69 is a schematic cross-sectional view taken along lines XII-XII′and XIII-XIII′ of FIG. 66 .

FIG. 70 is a schematic cross-sectional view taken along lines XII-XII′and XIII-XIII′ of FIG. 66 .

FIG. 71 is a schematic cross-sectional view taken along lines XII-XII′and XIII-XIII′ of FIG. 66 .

FIG. 72 is a plan view showing an example of the pixels in the displayarea of FIG. 65 .

FIG. 73 is a schematic cross-sectional view taken along lines XVII-XVII′and XVIII-XVIII′ of FIG. 72 .

FIG. 74 is a schematic cross-sectional view taken along lines XVII-XVII′and XVIII-XVIII′ of FIG. 72 .

FIG. 75 is a schematic cross-sectional view taken along lines XVII-XVII′and XVIII-XVIII′ of FIG. 72 .

FIG. 76 is a plan view showing an example of the pixels in the displayarea of FIG. 65 .

FIG. 77 is a schematic cross-sectional view taken along lines XX-XX′ andXXI-XXI′ of FIG. 76 .

FIG. 78 is a plan view showing an example of the pixels in the displayarea of FIG. 65 .

FIG. 79 is a schematic cross-sectional view taken along line XXII-XXII′of FIG. 78 .

FIG. 80 is a schematic cross-sectional view taken along line XXII-XXII′of FIG. 78 .

FIG. 81 is a plan view showing an example of the pixels in the displayarea of FIG. 65 .

FIG. 82 is a plan view showing an example of the pixels in the displayarea of FIG. 65 .

FIG. 83 is a schematic cross-sectional view showing an example of asub-pixel and an example of a transmissive area of FIG. 82 .

FIG. 84 is a schematic cross-sectional view showing an example of thetransmissive area of FIG. 82 .

FIG. 85 is a schematic cross-sectional view showing an example of thetransmissive area of FIG. 82 .

FIG. 86 is a schematic cross-sectional view showing an example of thetransmissive area of FIG. 82 .

FIG. 87 is a schematic cross-sectional view showing an example of thetransmissive area of FIG. 82 .

FIG. 88 is a schematic cross-sectional view showing an example of thetransmissive area of FIG. 82 .

FIG. 89 is a schematic cross-sectional view showing an example of thesub-pixels and an example of the transmissive areas of FIG. 82 .

FIG. 90 is an exploded, perspective view of a display device accordingto an embodiment.

FIG. 91 is a plan view showing an example of pixels in a sub area of adisplay panel.

FIG. 92 is a plan view showing an example of pixels in a sub area of adisplay panel.

FIG. 93 is a schematic cross-sectional view showing an example of themirror area of FIG. 92 .

FIG. 94 is a perspective view showing a display panel according to anembodiment.

FIG. 95 is a development view showing a display panel according to anembodiment.

FIG. 96 is a front view showing an example of the display panel of FIG.94 .

FIG. 97 is a rear view showing an example of the display panel of FIG.94 .

FIG. 98 is a side view showing an example of the display panel of FIG.94 .

FIG. 99 is a schematic cross-sectional view showing an example of a partof a fourth side surface of FIG. 95 .

FIG. 100 is a development view showing a display panel according to anembodiment.

FIG. 101 is a side view showing an example of the display panel of FIG.100 .

FIG. 102 is a schematic cross-sectional view showing an example of apart of a fourth side surface of FIG. 100 .

FIG. 103 is a schematic cross-sectional view showing an example of apart of a fourth side surface of FIG. 100 .

FIG. 104 is a development view showing a display panel according to anembodiment.

FIG. 105 is a development view showing a display panel according to anembodiment.

FIG. 106 is a side view showing an example of the display panel of FIG.105 .

FIG. 107 is a schematic cross-sectional view showing an example of afourth side surface of FIG. 105 .

FIG. 108 is a development view showing a display panel according to anembodiment.

FIG. 109 is a development view showing a display panel according to anembodiment.

FIG. 110 is a development view showing a display panel according to anembodiment.

FIG. 111 is a schematic cross-sectional view showing an example of adisplay panel according to an embodiment.

FIG. 112 is a schematic cross-sectional view showing a sensor electrodelayer of an upper surface and an antenna layer of a first side surfaceof FIG. 111 .

FIG. 113 is a schematic cross-sectional view showing an example of theforce sensor of FIG. 111 .

FIG. 114 is a schematic cross-sectional view showing an example of theforce sensor of FIG. 111 .

FIG. 115 is a schematic cross-sectional view showing an example of theforce sensor of FIG. 111 .

FIG. 116 is a schematic cross-sectional view showing an example of adisplay panel according to an embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The embodiments will now be described more fully hereinafter withreference to the accompanying drawings. The embodiments may, however, beprovided in different forms and should not be construed as limiting. Thesame reference numbers indicate the same components throughout thedisclosure. In the accompanying figures, the thickness of layers andregions may be exaggerated for clarity.

Some of the parts which are not associated with the description may notbe provided in order to describe embodiments of the disclosure and likereference numerals refer to like elements throughout the specification.

It will also be understood that when a layer is referred to as being“on” another layer or substrate, it can be directly on the other layeror substrate, or intervening layers may also be present. In contrast,when an element is referred to as being “directly on” another element,there may be no intervening elements present.

Further, in the specification, the phrase “in a plan view” means when anobject portion is viewed from above, and the phrase “in a schematiccross-sectional view” means when a schematic cross-section taken byvertically cutting an object portion is viewed from the side.Additionally, the terms “overlap” or “overlapped” mean that a firstobject may be above or below a second object, and vice versa. The terms“face” and “facing” mean that a first object may directly or indirectlyoppose a second object. In a case in which a third object intervenesbetween the first and second object, the first and second objects may beunderstood as being indirectly opposed to one another, although stillfacing each other.

The spatially relative terms “below”, “beneath”, “lower”, “above”,“upper”, or the like, may be used herein for ease of description todescribe the relations between one element or component and anotherelement or component as illustrated in the drawings. It will beunderstood that the spatially relative terms are intended to encompassdifferent orientations of the device in use or operation, in addition tothe orientation depicted in the drawings. For example, in the case wherea device illustrated in the drawing is turned over, the devicepositioned “below” or “beneath” another device may be placed “above”another device. Accordingly, the illustrative term “below” may includeboth the lower and upper positions. The device may also be oriented inother directions and thus the spatially relative terms may beinterpreted differently depending on the orientations.

Throughout the specification, when an element is referred to as being“connected” to another element, the element may be “directly connected”to another element, or “electrically connected” to another element withone or more intervening elements interposed therebetween. It will befurther understood that when the terms “comprises,” “comprising,”“includes” and/or “including” are used in this specification, they or itmay specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of other features, integers, steps, operations, elements,components, and/or any combination thereof.

It will be understood that, although the terms “first,” “second,”“third,” or the like may be used herein to describe various elements,these elements should not be limited by these terms. These terms areused to distinguish one element from another element or for theconvenience of description and explanation thereof. For example, when “afirst element” is discussed in the description, it may be termed “asecond element” or “a third element,” and “a second element” and “athird element” may be termed in a similar manner without departing fromthe teachings herein.

“About” or “approximately” as used herein is inclusive of the statedvalue and means within an acceptable range of deviation for theparticular value as determined by one of ordinary skill in the art,considering the measurement in question and the error associated withmeasurement of the particular quantity (i.e., the limitations of themeasurement system). For example, “about” may mean within one or morestandard deviations, or within ±30%, 20%, 10%, 5% of the stated value.

In the specification and the claims, the term “and/or” is intended toinclude any combination of the terms “and” and “or” for the purpose ofits meaning and interpretation. For example, “A and/or B” may beunderstood to mean “A, B, or A and B.” The terms “and” and “or” may beused in the conjunctive or disjunctive sense and may be understood to beequivalent to “and/or.” In the specification and the claims, the phrase“at least one of” is intended to include the meaning of “at least oneselected from the group of” for the purpose of its meaning andinterpretation. For example, “at least one of A and B” may be understoodto mean “A, B, or A and B.”

Unless otherwise defined, all terms used herein (including technical andscientific terms) have the same meaning as commonly understood by thoseskilled in the art to which this disclosure pertains. It will be furtherunderstood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an ideal or excessively formal sense unlessclearly defined in the specification.

FIG. 1 is a perspective view of a display device according to anembodiment. FIG. 2 is an exploded, perspective view of a display deviceaccording to an embodiment.

Referring to FIGS. 1 to 2 , a display device 10 according to anembodiment may display moving images or still images. The display device1 may be used as the display screen of portable electronic devices suchas a mobile phone, a smart phone, a tablet PC, a mobile communicationsterminal, an electronic notebook, an electronic book, a portablemultimedia player (PMP), a navigation device and an ultra mobile PC(UMPC), as well as the display screen of various products such as atelevision, a notebook, a monitor, a billboard and the Internet ofThings. The display device 10 according to an embodiment may be appliedto wearable devices such as a smart watch, a watch phone, anglasses-type display, and a head-mounted display (HMD) device. Thedisplay device 10 according to an embodiment may be used as a centerinformation display (CID) disposed at the instrument cluster and thecenter fascia or the dashboard of a vehicle, as a room mirror display onthe behalf of the side mirrors of a vehicle, as a display placed on theback of each of the front seats that is the entertainment system forpassengers at the rear seats of a vehicle.

In the example shown in FIGS. 1 and 2 , the display device 10 accordingto an embodiment is applied to a smart phone for convenience ofillustration. The display device 10 according to an embodiment includesa cover window 100, a display panel 300, a display circuit board 310, adisplay driver 320, a sensor driver 330, a bracket 600, a main circuitboard 700, a battery 790 and a bottom cover 900.

As used herein, the term “upper side” refers to the side of the displaypanel 300 in the z-axis direction where the cover window 100 isdisposed, whereas the term “lower side” refers to the opposite side ofthe display panel 300 in the z-axis direction where the bracket 600 isdisposed. As used herein, the terms “left,” “right,” “upper” and “lower”sides indicate relative positions when the display panel 300 is viewedfrom the top. For example, the “left side” refers to the oppositedirection indicated by the arrow of the x-axis, the “right side” refersto the direction indicated by the arrow of the x-axis, the “upper side”refers to the direction indicated by the arrow of the z-axis, and the“lower side” refers to the opposite direction indicated by the arrow ofthe z-axis.

The display device 10 may have a substantially rectangular shape whenviewed from the top. For example, the display device 10 may have asubstantially rectangular shape having shorter sides in a firstdirection (x-axis direction) and longer sides in a second direction(y-axis direction) when viewed from the top as shown in FIG. 1 . Each ofthe corners where the short side in the first direction (x-axisdirection) meets the longer side in the second direction (y-axisdirection) may be rounded with a predetermined curvature or may be aright angle. The shape of the display device 10 when viewed from the topis not limited to a substantially rectangular shape, but may be formedin another substantially polygonal shape, substantially circular shape,or substantially elliptical shape.

The display device 10 may include a first area DRA1, and second areasDRA2 extended from the right and left sides of the first area DRA1,respectively. The first area DRA1 may be either flat or curved. Thesecond areas DRA2 may be either flat or curved. When both the first areaDRA1 and the second areas DRA2 are formed as curved surfaces, thecurvature of the first area DRA1 may be different from the curvature ofthe second areas DRA2. When the first area DRA1 is formed as a curvedsurface, it may have a constant curvature or a varying curvature. Whenthe second areas DRA2 are formed as curved surfaces, they may have aconstant curvature or a varying curvature. When both the first area DRA1and the second areas DRA2 are formed as flat surfaces, the angle betweenthe first area DRA1 and the second areas DRA2 may be an obtuse angle.

Although the second areas DRA2 are extended from the left and rightsides of the first area DRA1, respectively, in FIG. 1 , this is merelyillustrative. For example, the second area DRA2 may be extended fromonly one of the right and left sides of the first area DRA1.Alternatively, the second area DR2 may be extended from at least one ofupper and lower sides of the first area DR1, as well as the left andright sides. Alternatively, the second areas DRA2 may be eliminated, andthe display device 10 may include only the first area DRA1.

The cover window 100 may be disposed on the display panel 300 to coveror overlap an upper surface of the display panel 300. Thus, the coverwindow 100 may protect the upper surface of the display panel 300.

The cover window 100 may include a transmissive portion DA100corresponding to the display panel 300 and a non-transmissive portionNDA100 corresponding to the other area than the display panel 300. Thecover window 100 may be disposed in the first region DR1 and the secondregions DR2. The transmissive portion DA100 may be disposed in a part ofthe first region DR1 and a part of each of the second regions DR2. Thenon-transmissive portion NDA100 may include an opaque material thatblocks light. The non-transmissive portion NDA100 may include a patternthat may be perceived by a user when no image is displayed.

The display panel 300 may be disposed under or below the cover window100. The display panel 300 may be disposed such that it overlaps withthe transmissive portion 100DA of the cover window 100. The displaypanel 300 may be disposed in the first area DR1 and the second areasDR2. A user may see images from the display panel 300 in the first areaDR1 as well as the second areas DR2.

The display panel 300 may be a light-emitting display panel includinglight-emitting elements. For example, the display panel 300 may be anorganic light-emitting display panel using organic light-emitting diodesincluding organic emissive layer, a micro light-emitting diode displaypanel using micro LEDs, a quantum-dot light-emitting display panelincluding quantum-dot light-emitting diodes including an quantum-dotemissive layer, or an inorganic light-emitting display panel usinginorganic light-emitting elements including an inorganic semiconductor.

The display panel 300 may be a rigid display panel that is rigid andthus is not easily bent, or a flexible display panel that is flexibleand thus may be easily bent, folded or rolled. For example, the displaypanel 300 may be a foldable display panel that may be folded andunfolded, a curved display panel having a curved display surface, abended display panel having a bent area other than the display surface,a rollable display panel that may be rolled and unrolled, and astretchable display panel that may be stretched.

The display panel 300 may be a transparent display panel to allow a userto see an object or a background under or below the display panel fromabove the display panel 300 through it. Alternatively, the display panel300 may be a reflective display panel that may reflect an object or abackground on the upper surface of the display panel 300.

A first flexible film 340 may be attached to one edge of the displaypanel 300. One side of the first flexible film 340 may be attached tothe edge of the display panel 300 using an anisotropic conductive film.The first flexible film 340 may be a flexible film that may be bent.

The display driver 320 may be disposed on the first flexible film 340.The display driver 320 may receive control signals and supply voltagesand may generate and output signals and voltages for driving the displaypanel 300. The display driver 320 may be an integrated circuit (IC).

The display circuit board 310 may be attached to the opposite side ofthe first flexible film 340. The opposite side of the first flexiblefilm 340 may be attached to the upper surface of the display circuitboard 310 using an anisotropic conductive film. The display circuitboard 310 may be a flexible printed circuit board (FPCB) that may bebent, a rigid printed circuit board (PCB) that is rigid and notbendable, or a hybrid printed circuit board including a rigid printedcircuit board and a flexible printed circuit board.

The sensor driver 330 may be disposed on the display circuit board 310.The sensor driver 330 may be an integrated circuit. The sensor driver330 may be attached on the display circuit board 310. The sensor driver330 may be electrically connected to sensor electrodes of a sensorelectrode layer of the display panel 300 through the display circuitboard 310.

The sensor electrode layer of the display panel 300 may sense a user'stouch input using at least one of a variety of touch sensing schemessuch as resistive sensing and capacitive sensing. For example, when auser's touch input is sensed by using the sensor electrode layer of thedisplay panel 300 by the capacitive sensing, the sensor driver 330applies driving signals to the driving electrodes among the sensorelectrodes, and senses the voltages charged in the mutual capacitancebetween the driving electrodes and the sensing electrodes through thesensing electrodes among the sensor electrodes, thereby determiningwhether there is a user's touch. User's touches may include a physicalcontact and a near proximity. A user's physical contact refers to thatan object such as the user's finger or a pen is brought into contactwith the cover window 100 disposed on the sensor electrode layer. A nearproximity refers to that an object such as the user's finger or a pen isclose to but is spaced apart from the cover window 100, such as hoveringover it. The sensor driver 330 may transmit sensor data to the mainprocessor 710 based on the sensed voltages, and the main processor 710may analyze the sensor data to calculate the coordinates of the positionwhere the touch input is made.

On the display circuit board 310, a power supply for supplying drivingvoltages for driving the pixels P, the scan driver and the display drive320 of the display panel 300 may be disposed. Alternatively, the powersupply may be integrated with the display drive 320, in which case, thedisplay driver 320 and the power supply may be a single integratedcircuit.

The bracket 600 for supporting the display panel 300 may be disposedunder or below the display panel 300. The bracket 600 may includeplastic, metal, or both plastic and metal. In the bracket 600, a firstcamera hole CMH1 in which a camera device 731 may be inserted, a batteryhole BH in which the battery 790 may be disposed, a cable hole CAHthrough which a cable 314 connected to the display circuit board 310 maypass, for example.

The main circuit board 700 and the battery 790 may be disposed under orbelow the bracket 600. The main circuit board 700 may be either aprinted circuit board or a flexible printed circuit board.

The main circuit board 700 may include a main processor 710, a cameradevice 731, and a main connector 711. The maintain processor 710 may bean integrated circuit. The camera device 731 may be disposed on both theupper and lower surfaces of the main circuit board 700, and the mainprocessor 710 and the main connector 711 may be disposed on one of theupper and lower surfaces of the main circuit board 700.

The main processor 710 may control all the functions of the displaydevice 10. For example, the main processor 710 may output digital videodata to the display driver 320 through the display circuit board 310 sothat the display panel 300 displays images. The main processor 710 mayreceive detection data from the sensor driver 330. The main processor710 may determine whether there is a user's touch based on the detectiondata, and may execute an operation associated with the user's physicalcontact or near proximity if determined. For example, the main processor710 may calculate the coordinates of the user's touch by analyzing thedetection data, and then may run an application indicated by an icontouched by the user or perform the operation. The main processor 710 maybe an application processor, a central processing unit, or a system chipas an integrated circuit.

The camera device 731 processes image frames such as still image andvideo obtained by the image sensor in the camera mode and outputs themto the main processor 710. The camera device 731 may include at leastone of a camera sensor (e.g., CCD, CMOS, within the spirit and the scopeof the disclosure), a photo sensor (or an image sensor), and a lasersensor.

The cable 314 passing through the cable hole CAH of the bracket 600 maybe connected to the main connector 711, and thus the main circuit board700 may be electrically connected to the display circuit board 310.

In addition to the main processor 740, the camera device 731 and themain connector 711, the main circuit board 700 may include a wirelesscommunications unit 720, at least one input unit 730, at least onesensor unit 740, at least one output unit 750, at least one interface760, a memory 770, and a power supply unit 780, shown in FIG. 3 .

For example, the wireless communications unit 720 may include at leastone of a broadcasting receiving module 721, a mobile communicationsmodule 722, a wireless Internet module 723, a near-field communicationsmodule 724, and a location information module 725.

The broadcast receiving module 721 receives a broadcast signal and/orbroadcast related information from an external broadcast managing serverthrough a broadcast channel. The broadcasting channel may include asatellite channel and a terrestrial channel.

The mobile communications module 722 transmits/receives wireless signalsto/from at least one of a base station, an external terminal and aserver in a mobile communications network established according totechnical standards or communications schemes for mobile communications(e.g., global system for mobile communications (GSM), code divisionmulti access (CDMA), code division multi access 2000 (CDMA2000),enhanced voice-data optimized or enhanced voice-data only (EV-DO),wideband CDMA (WCDMA), high speed downlink packet access (HSDPA), highspeed uplink packet access (HSUPA), long term evolution (LTE), long termevolution-advanced (LTE-A), within the spirit and the scope of thedisclosure). The wireless signals may include a voice call signal, avideo call signal, or a variety of types of data depending ontransmission and reception of a text/multimedia message.

The wireless Internet module 723 refers to a module for wirelessInternet connection. The wireless Internet module 723 may transmit andreceive wireless signals in a communications network according towireless Internet technologies. Examples of wireless Internettechnologies include wireless LAN (WLAN), wireless-fidelity (Wi-Fi),wireless fidelity (Wi-Fi) Direct, digital living network alliance(DLNA), within the spirit and the scope of the disclosure.

The near-field communications module 724 is for near fieldcommunications, and may support near field communications by using atleast one of: Bluetooth™, radio frequency identification (RFID),infrared data association (IrDA), ultra wideband (UWB), ZigBee,near-field communications (NFC), Wi-Fi, Wi-Fi Direct and wirelessuniversal serial bus (Wireless USB). The near-field communicationsmodule 724 may support wireless communications between the displaydevice 10 and a wireless communications system, between the displaydevice 10 and another electronic device, or between the display device10 and a network where another electronic device (or an external server)is located over wireless area networks. The wireless area network may bea wireless personal area network. Another electronic device may be awearable device capable of exchanging (or interworking) data with thedisplay device 10.

The location information module 725 is a module for acquiring thelocation (or current location) of the display device 10. Examples of thelocation information module 725 include a global positioning system(GPS) module or a wireless fidelity (Wi-Fi) module. For example, thedisplay device 10 utilizing a GPS module may acquire its location 10 byusing signals transmitted from GPS satellites. By utilizing a Wi-Fimodule, the display device 10 may acquire its location based on theinformation of wireless access points (APs) that transmit/receivewireless signals to/from the Wi-Fi module. The location informationmodule 725 refers to any module that may be used to acquire the location(or current location) of the display device 10 and is not limited to amodule that calculates or acquires the location of the display device 10by itself.

The input unit 730 may include an image input unit for inputting animage signal, such as a camera device 731, an audio input unit forinputting an audio signal, such as a microphone 732, and an input device733 for receiving information from a user.

The camera device 731 processes an image frame such as a still image ora moving image obtained by an image sensor in a video call mode or arecording mode. The processed image frames may be displayed on thedisplay panel 300 or stored in the memory 770.

The microphone 732 processes external sound signals into electricalvoice data. The processed voice data may be utilized in a variety ofways depending on a function or an application being executed on thedisplay device 10. In the microphone 732, a variety of algorithms forremoving different noises generated during a process of receiving anexternal sound signal may be implemented.

The main processor 710 may control the operation of the display device10 in response to the information input through the input device 733.The input device 733 may include a mechanical input means or a touchinput means such as a button, a dome switch, a jog wheel, a jog switch,for example, positioned on the rear or side surface of the displaydevice 10. The touch input means may be implemented with the sensorelectrode layer of the display panel 300.

The sensor unit 740 may include one or more sensors that sense at leastone of information in the display device 10, the environment informationsurrounding the display device 10, and user information, and generate asensing signal associated with it. The main processor 710 may controldriving or operation of the display device 10 or may perform dataprocessing, function, or operation associated with an applicationinstalled on the display device 10 based on the sensing signal. Thesensor unit 740 may include at least one of: a proximity sensor, anillumination sensor, an acceleration sensor, a magnetic sensor, agravity sensor (G-sensor), a gyroscope sensor, a motion sensor, a RGBsensor, an infrared sensors (IR sensor), a finger scan sensor, anultrasonic sensor, an optical sensor, a battery gauge, an environmentalsensor (e.g., a barometer, a hygrometer, a thermometer, a radiationsensor, a heat sensor, a gas sensor, for example), and a chemical sensor(e.g., an electronic nose, a healthcare sensor, a biometric sensor, forexample)

The proximity sensor may refer to a sensor that may detect the presenceof an object approaching a predetermined detection surface or a nearbyobject by using an electromagnetic force, an infrared ray, for example,without using a mechanical contact. Examples of the proximity sensorinclude a transmissive photoelectric sensor, a direct reflectivephotoelectric sensor, a mirror reflective photoelectric sensor, ahigh-frequency oscillation proximity sensor, a capacitive proximitysensor, a magnetic proximity sensor, an infrared proximity sensor, forexample. The proximity sensor may detect not only a proximity touch butalso a proximity touch pattern such as a proximity touch distance, aproximity touch direction, a proximity touch speed, a proximity touchtime, a proximity touch position, and a proximity touch moving state.The main processor 710 may process data (or information) correspondingto the proximity touch operation and the proximity touch patterndetected by the proximity sensor, and may control the display panel 300so that it displays visual information corresponding to the processeddata. The ultrasonic sensor may recognize location information of anobject using ultrasonic waves. The main processor 710 may calculate thelocation of an object based on information detected from the opticalsensor and the ultrasonic sensors. Because the speed of the light isdifferent from the speed of the ultrasonic waves, the position of theobject may be calculated using the time taken for the light to reach theoptical sensor and the time taken for the ultrasonic wave to reach theultrasonic sensor.

The output unit 750 is for generating outputs associated with visual,auditory, tactile effects, and the like, may include at least one of thedisplay panel 300, the sound output module 752, the haptic module 753and the light output 754.

The display panel 300 displays (outputs) information processed by thedisplay device 10. For example, the display panel 300 may displayinformation on an application run on the screen of the display device10, or user interface (UI) or graphic user interface (GUI) informationaccording to the execution screen information. The display panel 300 mayinclude a display layer for displaying images and a sensor electrodelayer for sensing a user's touch input. As a result, the display panel300 may work as one of the input devices 733 providing an inputinterface between the display device 10 and the user, and also work asone of the output units 750 for providing an output interface betweenthe display device 10 and the user.

The sound output module 752 may output source data received from thewireless communications unit 720 or stored in the memory 770 in a callsignal reception mode, a talking or recording mode, a voice recognitionmode, a broadcast reception mode or the like. The sound output unit 752may also output a sound signal associated with a function performed inthe display device 10 (e.g., a call signal reception sound, a messagereception sound, for example) The sound output unit 752 may include areceiver and a speaker. At least one of the receiver and the speaker maybe a sound generator that is attached under or below the display panel300 and vibrates the display panel 300 to output sound. The secondgenerator may be a piezoelectric element or a piezoelectric actuatorthat contracts or expands depending on a voltage applied thereto, or maybe an exciter that generates a magnetic force using a voice coil tovibrate the display panel 300.

The haptic module 753 may generate a variety of tactile effects sensedby a user. The haptic module 753 may provide a user with vibration asthe tactile effect. The intensity and pattern of the vibration generatedby the haptic module 753 may be controlled by user selection or settingof the main processor 710. For example, the haptic module 753 may outputdifferent vibrations by synthesizing them or sequentially. In additionto the vibration, the haptic module 753 may generate various types oftactile effects, such as stimulus effects by a pin arrangementvertically moving on a skin, a spraying or suction force through aspraying or suction hole, a graze on a skin, contact of an electrode,and an electrostatic force, or effects of cold or hot feeling reproducedby using a device capable of absorbing or generating heat. The hapticmodule 753 may not only transmit a tactile effect through directcontact, but also may allow a user to feel the tactile effect through amuscle sense such as a finger or an arm.

The light output unit 754 outputs a signal for notifying occurrence ofan event by using light of a light source. Examples of the eventsoccurring in the display device 10 may include message reception, callsignal reception, missed call, alarm, schedule notification, emailreception, information reception through an application, within thespirit and the scope of the disclosure. The signal output from the lightoutput unit 754 is produced as the display device 10 emits light of asingle color or multiple colors through the front or the rear surface.The signal output may be terminated once the display device 10 detectsthat the user has checked the event.

The interface 760 serves as a path to various types of external devicesconnected to the display device 10. The interface 150 may include atleast one of a wired/wireless headset port, an external charger port, awired/wireless data port, a memory card port, a port for electricallyconnecting to a device including an identity module, an audioinput/output (I/O) port, a video I/O port and an earphone port. When anexternal device is connected to the interface 760 of the display device10, appropriate control associated with the connected external devicemay be carried out.

The memory 770 stores data supporting various functions of the displaydevice 10. The memory 770 may store application programs that are run onthe display device 10, and data items and instructions for operating thedisplay device 10. At least some of the application programs may bedownloaded from an external server via wireless communications. Thememory 770 may store an application program for operating the mainprocessor 710, and may temporally store input/output data, e.g., a phonebook, a message, a still image, a moving picture, for example therein.The memory 770 may store haptic data for vibration in different patternsprovided to the haptic module 753 and acoustic data regarding varioussounds provided to the sound output unit 752. The memory 770 may includeat least one of a flash memory type storage medium, a hard disk typestorage medium, a solid state disk (SSD) type storage medium, a silicondisk drive (SDD) type storage medium, a multimedia card micro typestorage medium, a card type memory (for example, an SD or XD memory), arandom access memory (RAM), a static random access memory (SRMA), aread-only memory (ROM), an electrically erasable programmable read-onlymemory (EEPROM), a programmable read-only memory (PROM), a magneticmemory, a magnetic disk, and an optical disk.

The power supply unit 780 may receive a power from an external powersource and an internal power source to supply the power to each ofelements included in the display device 10 under the control of the mainprocessor 710. The power supply unit 780 may include the battery 790.The power supply unit 780 includes a connection port. The connectionport may be an example of the interface 760 to which the externalcharger for supplying power for charging the battery is electricallyconnected. Alternatively, the power supply unit 780 may charge thebattery 790 in a wireless manner without using the connection port. Thebattery 790 may receive power from an external wireless powertransmitter using at least one of inductive coupling based on themagnetic induction phenomenon or magnetic resonance coupling based onthe electromagnetic resonance phenomenon. The battery 790 may bedisposed so that it does not overlap the main circuit board 700 in thethird direction (z-axis direction). The battery 790 may overlap with thebattery hole BH of the bracket 600.

The bottom cover 900 may be disposed under or below the main circuitboard 700 and the battery 790. The bottom cover 900 may be fastened andfixed to the bracket 600. The bottom cover 900 may form the exterior ofthe lower surface of the display device 10. The bottom cover 900 mayinclude plastic, metal or plastic and metal.

A second camera hole CMH2 may be formed or disposed in the bottom cover900 via which the lower surface of the camera device 731 is exposed. Thepositions of the camera device 731 and the first and second camera holesCMH1 and CMH2 in line with the camera device 731 are not limited tothose of an embodiment shown in FIGS. 1 and 2 .

FIG. 4 is a plan view showing a display panel according to anembodiment. FIG. 5 is a side view showing an example of the displaypanel of FIG. 4 . In the plan view of FIG. 4 , the first flexible film340 of the display panel 300 is not bent but is unfolded.

Referring to FIGS. 4 and 5 , the display panel 300 may include asubstrate SUB, a display layer DISL, a sensor electrode layer SENL, apolarizing film PF, and a panel bottom cover PB.

The substrate SUB may be made of an insulating material such as glass,quartz and a polymer resin. The substrate SUB may be a rigid substrateor a flexible substrate that may be bent, folded, and/or rolled, withinthe spirit and the scope of the disclosure.

The display layer DISL may be disposed on the substrate SUB. The displaylayer DISL may include pixels and display images. The display layer DISLmay include a thin-film transistor layer on which thin-film transistorsmay be formed or disposed, an emission material layer on whichlight-emitting elements emitting light may be formed or disposed, and anencapsulation layer for encapsulating the emission material layer.

The display layer DISL may be divided into a display area DA and anon-display area NDA. In the display area DA, pixels are disposed todisplay images. In the non-display area NDA, no image is displayed. Thenon-display area NDA may surround the display area DA. The non-displayarea NDA may be defined as the area from the outer side of the displayarea DA to the edge of the display panel 300. In addition to the pixels,scan lines, data lines, power lines, for example electrically connectedto the pixels may be disposed in the display area DA. In the non-displayarea NDA, the scan driver for applying scan signals to scan lines,fan-out lines electrically connecting the data lines with the displaydriver 320, for example may be disposed.

The sensor electrode layer SENL may be disposed on the display layerDISL. The sensor electrode layer SENL may include sensor electrodes andmay sense whether there is a user's touch. The sensor electrode layerSENL may include a first layer in which connection units electricallyconnecting between the driving electrodes among the sensor electrodesmay be formed or disposed, and a second layer in which the sensorelectrodes may be formed or disposed.

The sensor electrode layer SENL may include a sensor area TSA and asensor peripheral area TPA. In the sensor area TSA, sensor electrodesmay be disposed to sense a user's touch input. In the sensor peripheralarea TPA, no sensor electrodes are disposed. The sensor peripheral areaTPA may surround the sensor area TSA. The sensor peripheral area TPA maybe defined as the area from the outer side of the sensor area TSA to theedge of the display panel 300. The sensor electrodes, the connectionunits, and conductive patterns may be disposed in the sensor area TSA.Sensor lines electrically connected to the sensor electrodes may bedisposed in the sensor peripheral area TPA.

The sensor area TSA of the sensor electrode layer SENL may overlap thedisplay area DA of the display layer DISL. Most of the sensor peripheralarea TPA of the sensor electrode layer SENL may overlap the non-displayarea NDA of the display layer DISL.

The polarizing film PF may be disposed on the sensor electrode layerSENL. The polarizing film may include a linear polarizer and aretardation film such as a λ/4 (quarter-wave) plate. The phaseretardation film may be disposed on the sensor electrode layer SENL, andthe linear polarizer may be disposed on the phase retardation film.

The cover window 100 may be disposed on the polarizing film PF. Thecover window 100 may be attached onto the polarizing film PF by atransparent adhesive member such as an optically clear adhesive (OCA)film.

The panel bottom cover PB may be disposed under or below the displaypanel 300. The panel bottom cover PB may be attached to the lowersurface of the display panel 300 by an adhesive member. The adhesivemember may be a pressure-sensitive adhesive (PSA). The panel bottomcover PB may include at least one of: a light-absorbing member forabsorbing light incident from outside, a buffer member for absorbingexternal impact, and a heat dissipating member for efficientlydischarging heat from the display panel 300.

The light-absorbing member may be disposed under or below the displaypanel 300. The light-absorbing member blocks the transmission of lightto prevent the elements disposed thereunder from being seen from abovethe display panel 300, such as the display circuit board 310. Thelight-absorbing member may include a light-absorbing material such as ablack pigment and a black dye.

The buffer member may be disposed under or below the light-absorbingmember. The buffer member absorbs an external impact to prevent thedisplay panel 300 from being damaged. The buffer member may be made upof a single layer or multiple layers. For example, the buffer member maybe formed of a polymer resin such as polyurethane, polycarbonate,polypropylene and polyethylene, or may be formed of a material havingelasticity such as a rubber and a sponge obtained by foaming aurethane-based material or an acrylic-based material.

The heat dissipating member may be disposed under or below the buffermember. The heat-dissipating member may include a first heat dissipationlayer including graphite or carbon nanotubes, and a second heatdissipation layer formed of a thin metal film such as copper, nickel,ferrite and silver, which may block electromagnetic waves and have highthermal conductivity.

The first flexible film 340 may be disposed in a non-display area NDA atone edge of the display panel 300. For example, the first flexible film340 may be disposed in the non-display area NDA at the lower edge of thedisplay panel 300. The first flexible film 340 may be bent so that it isdisposed under or below the display panel 300, and the display circuitboard 310 may be disposed on the lower surface of the panel bottom coverPB. The display circuit board 310 may be attached to and fixed to thelower surface of the panel bottom cover PB via a first adhesive member391. The first adhesive member 391 may be a pressure-sensitive adhesive.

An antenna area APA may include a first conductive pattern utilized asan antenna. The first conductive pattern of the antenna area APA may beutilized as a patch antenna for 5G mobile communications, or may beutilized as an antenna for an RFID tag for near field communications.When the first conductive pattern of the antenna area APA is utilized asa patch antenna for 5G mobile communications, it may be formed as aquadrangle patch when viewed from the top. When the first conductivepattern of the antenna area APA is utilized as an antenna for an RFIDtag for near field communications, it may be formed in a substantiallyloop shape or a substantially coil shape.

The antenna area APA may be disposed in the sensor peripheral area on atleast three outer sides of the sensor area TSA. The antenna area APA maybe disposed such that it surrounds at least three sides of the sensorarea TSA. For example, the antenna area APA may be disposed such that itsurrounds the upper side, the left side and the right side of the sensorarea TSA. Alternatively, the antenna area APA may be disposed in thesensor peripheral area on the four outer sides of the sensor area TSAFor example, the antenna area APA may be disposed such that it maysurround at least four sides of the sensor area TSA.

The first conductive pattern of the antenna area APA may be electricallyconnected to the first flexible film 340 at one edge of the displaypanel 300. The first conductive pattern of the antenna area APA may beelectrically connected to sensor pads disposed at one edge of thedisplay panel 300. The sensor pads may be connected to the firstflexible film 340 via an anisotropic conductive film. A radio frequencydriver 350 may be disposed on the first flexible film 340. The radiofrequency driver 350 may be an integrated circuit. The radio frequencydriver 350 may be electrically connected to the first conductive patternof the antenna area APA.

The radio frequency driver 350 may process a radio frequency (RF) signaltransmitted or received to the first conductive pattern of the antennaarea APA. For example, the radio frequency driver 350 may change thephase and amplify the amplitude of the radio frequency signal receivedto the first conductive pattern of the antenna area APA. The radiofrequency driver 350 may transmit the radio frequency signal that hasthe changed phase and the amplified amplitude to the mobilecommunications module 722 or the near-field communications module 725 ofthe main circuit board 700. Alternatively, the radio frequency driver350 may change the phase and amplify the amplitude of the radiofrequency signal transmitted from the mobile communications module 722or the near-field communications module 725 of the main circuit board700. The radio frequency driver 350 may transmit the radio frequencysignal having the changed phase and the amplified amplitude to the firstconductive pattern of the antenna area APA.

As shown in FIGS. 4 and 5 , the first conductive pattern AP of theantenna area APA disposed in the sensor peripheral area TPA of thesensor electrode layer SENL may be utilized as a patch antenna for 5Gmobile communications or an antenna for an RFID tag for near fieldcommunications. Although the wavelength of the electromagnetic wavestransmitted/received to/from the first conductive pattern in 5G mobilecommunications is short, the electromagnetic waves do not need to passthrough metal layers of the display panel 300. Therefore, theelectromagnetic waves may be stably radiated toward the upper side ofthe display device 10.

FIG. 6 is a plan view showing a display panel according to anembodiment. FIG. 7 is a side view showing an example of the displaypanel of FIG. 6 . In the plan view of FIG. 6 , flexible films 340 and360 of the display panel 300 are not bent but are unfolded.

An embodiment shown in FIGS. 6 and 7 may be different from an embodimentof FIGS. 4 and 5 in that the second flexible film 360 may be disposed onanother side of the display panel 300.

Referring to FIGS. 6 and 7 , when the first flexible film 340 isdisposed on a first side of the display panel 300, the antenna area APAmay be disposed on a second side opposite to the first side of thedisplay panel, on a third side connecting the first side with the secondside, and at a corner between the second side and the third side. Forexample, the antenna area APA may be disposed in the sensor peripheryarea TPA on the upper outer side of the sensor area TSA and in thesensor periphery area TPA on the right outer side of the sensor areaTSA. The antenna area APA may be disposed at the corner between theupper side and the right side of the display panel 300.

Alternatively, the antenna area APA may be disposed in the sensor areaTSA. The first conductive pattern AP of the antenna area APA disposed inthe sensor area TSA may be formed in a substantially serpentine shapeincluding bending portions when viewed from the top, but the disclosureis not limited thereto. The first conductive pattern of the antenna areaAPA disposed in the sensor area TSA may be formed in a quadrangularpatch, a substantially loop shape, or a substantially coil shape whenviewed from the top.

The first conductive pattern of the antenna area APA may be electricallyconnected to the second flexible film 360 at the opposite edge of thedisplay panel 300. The first conductive pattern of the antenna area APAmay be electrically connected to sensor pads disposed at one edge of thedisplay panel 300. The sensor pads may be connected to the secondflexible film 360 via an anisotropic conductive film. The radiofrequency driver 350 may be disposed on the second flexible film 360.The radio frequency driver 350 may be an integrated circuit. The radiofrequency driver 350 may be electrically connected to the firstconductive pattern AP of the antenna area APA.

As shown in FIGS. 6 and 7 , the first conductive pattern AP of theantenna area APA disposed in the sensor peripheral area TPA of thesensor electrode layer SENL may be utilized as a patch antenna for 5Gmobile communications or an antenna for an RFID tag for short rangecommunications. Although the wavelength of the electromagnetic wavestransmitted/received to/from the first conductive pattern in 5G mobilecommunications is short, the electromagnetic waves do not need to passthrough metal layers of the display panel 300. Therefore, theelectromagnetic waves may be stably radiated toward the upper side ofthe display device 10.

FIG. 8 is a plan view showing a display panel according to anembodiment. FIG. 9 is a side view showing an example of the displaypanel of FIG. 8 . FIG. 8 is a plan view of the display panel 300 with afirst bending area BA1 and a second bending area BA2 unfolded.

An embodiment of FIGS. 8 and 9 may be different from an embodiment ofFIGS. 4 and 5 in that a first bending area BA1 on a side of the displaypanel 300 may be bent so that a first pad area PDA1 may be disposed on alower surface of the panel bottom cover PB, and a second bending areaBA2 on another side of the display panel 300 may be bent so that asecond pad area PDA2 may be disposed on a lower surface of the panelbottom cover PB. For example, the display panel 300 may be a bendeddisplay panel with one side and the other side bent.

Referring to FIGS. 8 and 9 , the first bending area BA1 and the firstpad area PDA1 may protrude from the sensor peripheral area TPA on oneside of the display panel 300 in the second direction (y-axisdirection). In FIGS. 8 and 9 , the length of the first bending area BA1and the first pad area PDA1 in the first direction (x-axis direction) issmaller than the length of the sensor area TSA in the first direction(x-axis direction). It is, however, to be understood that the disclosureis not limited thereto.

The display panel 300 may be bent at the first bending area BA1, and thefirst pad area PDA1 may be disposed on the lower surface of the panelcover member 400. The first pad area PDA1 may overlap the sensor areaTSA in the thickness direction (z-axis direction) of the display panel300. The display driver 320 and the display circuit board 310 may bedisposed in the first pad area PDA1.

The second bending area BA2 and the second pad area PDA2 may protrudefrom the sensor peripheral area TPA on the other side of the displaypanel 300 in the second direction (y-axis direction). In FIGS. 8 and 9 ,the length of the second bending area BA2 and the second pad area PDA2in the first direction (x-axis direction) is smaller than the length ofthe sensor area TSA in the first direction (x-axis direction). It is,however, to be understood that the disclosure is not limited thereto.

Although the other side of the display panel 300 is the opposite side tothe side of the display panel 300 in FIGS. 8 and 9 , the disclosure isnot limited thereto. For example, as shown in FIGS. 10 and 11 , one sideof the display panel 300 may be one of the upper side and the lower sideof the display panel 300, while the other side of the display panel 300may be one of the left side and right side of the display panel 300.

The display panel 300 may be bent at the second bending area BA2, andthe second pad area PDA2 may be disposed on the lower surface of thepanel cover member 400. The second pad area PDA2 may overlap the sensorarea TSA in the thickness direction (z-axis direction) of the displaypanel 300.

The antenna area APA and the radio frequency driver 350 may be disposedin the second pad area PDA2. The antenna area APA may include the firstconductive pattern formed in a substantially loop shape, a substantiallycoil shape, or a quadrangular patch. Since the second pad area PDA2 isdisposed on the lower surface of the panel cover member 400, the firstconductive pattern may be disposed on the lower surface of the panelcover member 400.

As shown in FIGS. 8 and 9 , when the antenna area APA is disposed in thesecond pad area PDA2, the design area for the first conductive patternin the antenna area APA may be increased compared to when it is disposedin the sensor peripheral area TPA. Therefore, the first conductivepattern AP of the antenna area APA may be designed more freely.

FIG. 12 is a plan view showing a display panel according to anembodiment. FIG. 13 is a side view showing an example of the displaypanel of FIG. 12 . FIG. 12 is a plan view of the display panel 300 witha first bending area BA1 and second bending areas BA2 unfolded.

An embodiment of FIGS. 12 and 13 may be different from an embodiment ofFIGS. 4 and 5 in that a first bending area BA1 at the center of a sideof the display panel 300 may be bent so that a first pad area PDA1 maybe disposed on the lower surface of the panel bottom cover PB, andsecond bending areas BA2 at edges of another side of the display panel300 may be bent so that a second pad area PDA2 may be disposed on alower surface of the panel bottom cover PB.

Referring to FIGS. 12 and 13 , the first bending area BA1 and the firstpad area PDA1 may protrude from the sensor peripheral area TPA at thecenter of one side of the display panel 300 in the second direction(y-axis direction). The length of the first bending area BA1 and thefirst pad area PDA1 in the first direction (x-axis direction) is smallerthan the length of the sensor area TSA in the first direction (x-axisdirection).

The second bending areas BA2 may protrude from the sensor peripheralarea TPA at the first edge and the second edge of one side of thedisplay panel 300 in the second direction (y-axis direction). The firstedge of the side of the display panel 300 may be disposed on the leftside of the center of the side of the display panel 300, and the secondedge of the side of the display panel 300 may be disposed on the rightside of the center of the side of the display panel 300. Although thesecond bending areas BA2 protrude from the sensor peripheral area TPA atthe first edge and the second edge of the side of the display panel 300in FIG. 12 , the disclosure is not limited thereto. For example, thesecond bending areas BA2 and the second pad area PDA2 may protrude fromthe sensor peripheral area TPA at one of the first edge and second edgeof the side of the display panel 300.

There may be a gap between the first bending area BA1 and the secondbending area BA2. Since the length of the part of the display panel 300that is bent at the second bending area BA2 is larger than the length ofthe part of the display panel 300 that is bent at the first bending areaBA1, the length of the second bending area BA2 in the second direction(y-axis direction) may be larger than the length of the first bendingarea BA1 in the second direction (y-axis direction), as shown in FIG. 12.

The second pad area PDA2 may be extended from the second bending areasBA2. There may be a gap between the first pad area PDA1 and the secondpad area PDA2. The second pad area PDA2 may surround the left side, theright side and the lower side of the first pad area PDA1. The maximumlength of the second pad area PDA2 in the first direction (x-axisdirection) may be larger than the maximum length of the first pad areaPDA1 in the first direction (x-axis direction). The maximum length ofthe second pad area PDA2 in the second direction (y-axis direction) maybe larger than the maximum length of the first pad area PDA1 in thesecond direction (y-axis direction).

The display panel 300 may be bent at the first bending area BA1 and thesecond bending area BA2, and the first pad area PDA1 and the second padarea PDA2 may be disposed on the lower surface of the panel cover member400. The first pad area PDA1 and the second pad area PDA2 may overlapthe sensor area TSA in the thickness direction (z-axis direction) of thedisplay panel 300. The display driver 320 and the display circuit board310 may be disposed in the first pad area PDA1. The antenna area APA andthe radio frequency driver 350 may be disposed in the second pad areaPDA2.

As shown in FIGS. 12 and 13 , when the first conductive pattern of theantenna area APA is disposed in the second pad area PDA2, the designarea for the first conductive pattern may be increased compared to whenit is disposed in the sensor peripheral area TPA.

The first conductive pattern AP and the radio frequency driver 350connected to the first conductive pattern AP may be electricallyconnected to the mobile communications module 722 or the near-fieldcommunications module 725 for wireless communications or may beelectrically connected to the battery 790 for wireless charging. Whenthe radio frequency driver 350 is electrically connected to the battery790, a circuit board electrically connecting the battery 790 with thesecond pad area PDA2 may be disposed the edge of the second pad areaPDA2 as shown in FIG. 12 . The circuit board 370 may be a flexibleprinted circuit board (FPC).

When the first conductive pattern AP is used for wireless charging, itmay include six layers L1 to L6 as shown in FIG. 14 for sufficientthickness. For example, the first layer L1 may be made of the same orsimilar material as a light-blocking layer BML, disposed under or belowan active layer 121 of the display layer DISL, and may have a thicknessof approximately or about 250 μm. The second layer L2 may be made of thesame or similar material as a gate electrode 122 of the display layerDISL and may have a thickness of approximately or about 250 μm. Thethird layer L3 may be made of the same or similar material as acapacitor electrode 125 of the display layer DISL and may have athickness of approximately or about 250 μm. The fourth layer L4 may bemade of the same or similar material as a source electrode 123 and adrain electrode 124 of the display layer DISL and may have a thicknessof approximately or about 700 μm. The fifth layer L5 may be made of thesame or similar material as a first connection unit BE1 of the sensorelectrode SENL and may have a thickness of approximately or about 250μm. The sixth layer L6 may be made of the same or similar material asthe sensor electrode SE of the sensor electrode SENL and may have athickness of approximately or about 700 μm. In this instance, since thelight-blocking layer BML and the first layer L1 may be eliminated, thefirst conductive pattern AP may have a thickness of at leastapproximately or about 2,150 μm.

FIG. 15 is a plan view showing a display panel according to anembodiment. FIG. 16 is a plan view showing a display panel according toan embodiment. In the plan views of FIGS. 15 and 16 , a bending area BA1of the display panel 300 is not bent but is unfolded.

An embodiment 15 and 16 may be different from an embodiment of FIG. 4 inthat a first bending area BA1 on a side of the display panel 300 may bebent so that a first pad area PDA1 may be disposed on a lower surface ofthe panel bottom cover PB.

Referring to FIGS. 15 and 16 , the first bending area BA1 and the firstpad area PDA1 may protrude from the sensor peripheral area TPA on oneside of the display panel 300 in the second direction (y-axisdirection). In FIGS. 15 and 16 , the length of the first bending areaBA1 and the first pad area PDA1 in the first direction (x-axisdirection) is substantially equal to the length of the sensor peripheralarea TPA in the first direction (x-axis direction). It is, however, tobe understood that the disclosure is not limited thereto.

The display panel 300 may be bent at the first bending area BA1, and thefirst pad area PDA1 may be disposed on the lower surface of the panelcover member 400. The first pad area PDA1 may overlap the sensor areaTSA in the thickness direction (z-axis direction) of the display panel300. The display driver 320, the display circuit board 310 and theantenna area APA may be disposed in the first pad area PDA1.

As shown in FIG. 15 , the display driver 320 may be disposed on one sideof the first pad area PDA1, and the antenna area APA may be disposed onboth sides of the display driver 320. Alternatively, as shown in FIG. 16, the display driver 320 may be disposed at the center of the first padarea PDA1, the antenna area APA may be disposed one side of the displaydriver 320, and the antenna area APA may be disposed on the other sideof the display driver 320.

As shown in FIGS. 15 and 16 , when the first conductive pattern of theantenna area APA is disposed in the first pad area PDA1, the design areafor the first conductive pattern may be increased compared to when it isdisposed in the sensor peripheral area TPA.

FIG. 17 is a plan view illustrating a sensor electrode layer of adisplay panel according to an embodiment.

In the example shown in FIG. 17 , the sensor electrodes TE and RE of thesensor electrode layer SENL include two kinds of electrodes, e.g., thedriving electrodes TE and the sensing electrodes RE, and the mutualcapacitive sensing is carried out by using two layer, i.e., drivingsignals are applied to the driving electrodes TE and then the voltagescharged at the mutual capacitances may be sensed through the sensingelectrodes RE.

In FIG. 17 , the antenna area APA including the first conductive patternAP is disposed in the sensor peripheral area TPA on the upper outer sideof the sensor area TSA, in the sensor peripheral area TPA on the rightouter side of the sensor area TSA, and at the corner between the upperside and the right side of the display panel 300, as in FIG. 6 . In FIG.17 , the second flexible film 360 where the radio frequency driver 350electrically connected to the first conductive pattern AP of the antennaarea APA is disposed may be disposed on the upper side of the displaypanel 300, as in FIG. 6 .

For convenience of illustration, FIG. 17 shows only sensor electrodes TEand RE, dummy patterns DE, sensor lines TL and RL, sensor pads TP1 andTP2, guard lines GL1 to GL5, and ground lines GRL1 to GRL3. However, thedisclosure is not limited thereto.

Referring to FIG. 17 , the sensor electrode layer SENL includes thesensor area TSA for sensing a user's touch, and the sensor peripheralarea TPA disposed around the sensor area TSA. The sensor area TSA mayoverlap the display area DA of the display layer DISL, and the sensorperipheral area TPA may overlap the non-display area NDA of the displaylayer DISL.

The sensor electrodes TE and RE may include first sensor electrodes TEand second sensor electrodes RE. In an embodiment shown in FIG. 17 , thefirst sensor electrode may be the driving electrode TE, and the secondsensor electrode may be the sensing electrode RE. In FIG. 17 , thedriving electrodes TE, the sensing electrodes RE and the dummy patternsDE each may have a substantially diamond shape when viewed from the top,but the disclosure is not limited thereto.

The sensing electrodes RE may be arranged or disposed in the firstdirection (x-axis direction) and electrically connected to one another.The driving electrodes TE may be arranged or disposed in the seconddirection (y-axis direction) crossing the first direction (x-axisdirection) and may be electrically connected to one another. The drivingelectrodes TE may be electrically separated from the sensing electrodesRE. The driving electrodes TE may be spaced apart from the sensingelectrodes RE. The driving electrodes TE may be arranged or disposed inparallel in the second direction (y-axis direction). In order toelectrically separate the sensing electrodes RE from the drivingelectrodes TE at their intersections, the driving electrodes TE adjacentto each other in the second direction (y-axis direction) may beelectrically connected through the first connection unit BE1, and thesensing electrodes RE adjacent to each other in the first direction(x-axis direction) may be electrically connected through secondconnection unit BE2.

The dummy patterns DE may be electrically separated from the drivingelectrodes TE and the sensing electrodes RE. The driving electrodes TE,the sensing electrodes RE and the dummy patterns DE may be disposedapart from each other. The dummy patterns DE may be surrounded by thedriving electrodes TE and the sensing electrodes RE, respectively. Eachof the dummy patterns DE may be electrically floating.

The parasitic capacitance between the second electrode of the emissionmaterial layer EML and the driving electrode TE or the sensing electrodeRE may be reduced due to the dummy patterns DE. When the parasiticcapacitance is reduced, there is an advantage in that the mutualcapacitance between the driving electrode TE and the sensing electrodeRE may be charged more quickly. However, as the area of the drivingelectrode TE and the sensing electrode RE is reduced due to the dummypatterns DE, the mutual capacitance between the driving electrode TE andthe sensing electrode RE may be reduced. As a result, the voltagecharged in the mutual capacitance may be easily affected by noise.Therefore, it is desired to determine the area of the dummy patterns DEby the trade-off between the parasitic capacitance and the mutualcapacitance.

The sensor lines TL and RL may be disposed in the sensor peripheral areaTPA. The sensor lines TL and RL may include sensing lines RLelectrically connected to the sensing electrodes RE, and first drivinglines TL1 and second driving lines TL2 electrically connected to thedriving electrodes TE.

The sensing electrodes RE disposed on one side of the sensor area TSAmay be electrically connected to the sensing lines RL. For example, someof the sensing electrodes RE electrically connected in the firstdirection (x-axis direction) that are disposed at the right end may beelectrically connected to the sensing lines RL as shown in FIG. 17 . Thesensing lines RL may be electrically connected to second sensor padsTP2. Therefore, the sensor driver 330 may be electrically connected tothe sensing electrodes RE.

The driving electrodes TE disposed on one side of the sensor area TSAmay be electrically connected to the first driving lines TL1, while thedriving electrodes TE disposed on the other side of the sensor area TSAmay be electrically connected to the second driving lines TL2. Forexample, some of the driving electrodes TE electrically connected to oneanother in the second direction (y-axis direction) on the lowermost sidemay be electrically connected to the first driving line TL1, while someof the driving electrodes TE disposed on the uppermost side may beelectrically connected to the second driving line TL2, as shown in FIG.17 . The second driving lines TL2 may be electrically connected to thedriving electrodes TE on the upper side of the sensor area TSA via theleft outer side of the sensor area TSA. The first driving lines TL1 andthe second driving lines TL2 may be electrically connected to the firstsensor pads TP1. Therefore, the sensor driver 330 may be electricallyconnected to the driving electrodes TE.

The first guard line GL1 may be disposed on the outer side of theoutermost one of the sensing lines RL. The first ground line GRL1 may bedisposed on the outer side of the first guard line GL1. As shown in FIG.17 , the first guard line GL1 may be disposed on the right side of therightmost one of the sensing lines RL, and the first ground line GRL1may be disposed on the right side of the first guard line GL1.

A second guard line GL2 may be disposed between the innermost one of thesensing lines RL and the rightmost one of the first driving lines TL1.As shown in FIG. 17 , the innermost one of the sensing lines RL may bethe leftmost one of the sensing lines RL. The second guard line GL2 maybe disposed between the rightmost one of the first driving lines TL1 andthe second ground line GRL2.

A third guard line GL3 may be disposed between the innermost one of thesensing lines RL and the second ground line GRL2. The second ground lineGRL2 may be connected to the rightmost one of the first sensor pads TP1and the leftmost one of the second sensor pads TP2.

A fourth guard line GL4 may be disposed on the outer side of theoutermost one of the second driving lines TL2. As shown in FIG. 17 , thefourth guard line GL4 may be disposed on the left side of the leftmostone of the second driving lines TL2.

The third ground line GRL3 may be disposed on the outer side of thefourth guard line GL4. As shown in FIG. 17 , the fourth guard line GL4may be disposed on the left side and upper side of the leftmost anduppermost one of the second driving lines TL2, and the third ground lineGRL3 may be disposed on the left side and upper side of the fourth guardline GL4.

The fifth guard line GL5 may be disposed on the inner side of theinnermost one of the second driving lines TL2. As shown in FIG. 17 , thefifth guard line GL5 may be disposed between the rightmost one of thesecond driving lines TL2 and the sensing electrodes RE.

A ground voltage may be applied to the first ground line GRL1, thesecond ground line GRL2 and the third ground line GRL3. A ground voltagemay be applied to the first guard line GL1, the second guard line GL2,the third guard line GL3, the fourth guard line GL4 and the fifth guardline GL5.

As shown in FIG. 17 , the driving electrodes TE adjacent to each otherin the second direction (y-axis direction) are electrically connected toeach other, while the driving electrodes TE adjacent to each other thefirst direction (x-axis direction) are electrically insulated from eachother. The sensing electrodes RE adjacent to each other in the firstdirection (x-axis direction) are electrically connected to each other,while the sensing electrodes RE adjacent to each other in the seconddirection (y-axis direction) are electrically insulated from each other.Therefore, mutual capacitances may be formed at intersections of thedriving electrodes TE and the sensing electrodes RE.

As shown in FIG. 17 , the first guard line GL1 is disposed between theoutermost one of the sensing lines RL and the first ground line GRL1, sothat it may reduce the influence by a change in the voltage of the firstground line GRL1 on the outermost one of the sensing lines RL. Thesecond guard line GL2 is disposed between the innermost one of thesensing lines RL and the outermost one of the first driving line TL1.Therefore, the second guard line GL2 may reduce the influence by achange in the voltage on the innermost one of the sensing lines RL andon the outermost one of the first driving lines TL1. The third guardline GL3 is disposed between the innermost one of the sensing lines RLand the second ground line GRL2, so that it may reduce the influence bya change in the voltage of the second ground line GRL2 on the innermostone of the sensing lines RL. The fourth guard line GL4 is disposedbetween the outermost one of the second sensing lines TL2 and the thirdground line GRL3, so that it may reduce the influence by a change in thevoltage of the third ground line GRL3 on the second driving line TL2.The fifth guard line GL5 is disposed between the innermost one of thesecond driving lines TL2 and the touch electrodes TE and RE, so that itmay suppress the innermost one of the second driving lines TL2 and thetouch electrodes TE and RE from influencing mutually.

The antenna area APA may be disposed in the sensor periphery area TPA onthe right outer side of the sensor area TSA and in the sensor peripheryarea TPA on the upper outer side of the sensor area TSA. In the sensorperipheral area TPA on the right outer side of the sensor area TSA, thenumber of sensing lines RL is reduced from the lower side to the upperside. Therefore, there may be an empty area where the sensing lines RLare not disposed in the sensor peripheral area TPA on the right outerside of the sensor area TSA. In the sensor peripheral area TPA on theupper outer side of the sensor area TSA, the number of the seconddriving lines TL2 is reduced from the left side to the right side.Therefore, there may be an empty area where the second driving lines TL2are not disposed in the sensor peripheral area TPA on the upper outerside of the sensor area TSA. The antenna area APA may be disposed in anempty area where the sensing lines RL are not disposed in the sensorperiphery area TPA on the right outer side of the sensor area TSA, andan empty area where the second driving lines TL2 are not disposed in thesensor periphery area TPA on the upper outer side of the sensor areaTSA. Accordingly, the first conductive pattern AP of the antenna areaAPA may be formed or disposed on a same layer as the sensing lines RLand the second driving lines TL2 of the sensor peripheral area TPA.

For example, as shown in FIG. 17 , the first conductive pattern AP ofthe antenna area APA may be disposed in the area of the sensorperipheral area TPA where the sensor lines may not be disposed, so thatthe first conductive pattern AP of the antenna area APA may be formed ordisposed on a same layer as the sensor lines of the sensor peripheralarea TPA. Therefore, the first conductive pattern AP of the antennaregion APA may be formed without any separate process. The antenna areaAPA may overlap a first ground line GRL1 and a third ground line GRL3.

A first guard line GL1 may be disposed between the antenna area APA andthe rightmost one of the sensing lines RL. By virtue of the first guardline GL1, it is possible to reduce or prevent the sensing lines RL frombeing affected by the electromagnetic waves radiated from the antennaarea APA. A fourth guard line GL4 may be disposed between the antennaarea APA and the second driving line TL2 disposed at the upper end. Byvirtue of the fourth guard line GL4, it is possible to reduce or preventthe second driving lines TL2 from being affected by the electromagneticwaves radiated from the antenna area APA.

Although the first conductive pattern AP of the antenna area APA isformed as a rectangular patch in FIG. 17 , the disclosure is not limitedthereto. The first conductive pattern AP may be formed in asubstantially loop shape or a substantially coil shape.

FIG. 18 is a view showing an example of the sensor driver connected tothe sensor electrodes.

For convenience of illustration, FIG. 18 shows only driving electrodesTE arranged or disposed in a row and electrically connected to eachother in the second direction (y-axis direction), and sensing electrodesRE arranged or disposed in a row and electrically connected to eachother in the first direction (x-axis direction). However, the disclosureis not limited thereto.

Referring to FIG. 18 , the sensor driver 330 may include a drivingsignal output 331, a first sensor detector 332, and a firstanalog-to-digital digital converter 333.

The driving signal output 331 may output a touch driving signal TD tothe driving electrodes TE through a first driving line TL1, and thetouch driving signal TD to the driving electrodes TE through a seconddriving line TL2. The touch driving signal TD may include pulses.

The driving signal output 331 may output the touch driving signal TD tothe driving lines TL1 and TL2 in a predetermined order. For example, thedriving signal output 331 may output the touch driving signal TDsequentially from the driving electrodes TE disposed on the left side ofthe touch sensing area TSA of FIG. 17 to the driving electrodes TEdisposed on the right side of the touch sensing area TSA.

The first sensor detector 332 detects a voltage charged in a firstmutual capacitance Cm1 through the sensing line RL electricallyconnected to the sensing electrodes RE. As shown in FIG. 18 , the firstmutual capacitance Cm1 may be formed between the driving electrode TEand the sensing electrode RE.

The first sensor detector 332 may include a first operational amplifierOA1, a first feedback capacitor Cfb1, and a first reset switch RSW1. Thefirst operational amplifier OA1 may include a first input terminal (−),a second input terminal (+), and an output terminal (out). The firstinput terminal (−) of the first operational amplifier OA1 may beconnected to the sensing line RL, the initialization voltage VREF may besupplied to the second input terminal (+), and the output terminal (out)of the first operational amplifier OA1 may be electrically connected toa first storage capacitor Cs1. The first storage capacitor Cs1 may beelectrically connected between the output terminal (out) of the firstoperational amplifier OA1 and the ground to store the output voltageVout1 of the first operational amplifier OA1. The first feedbackcapacitor Cfb1 and the first reset switch RSW1 may be electricallyconnected in parallel between the first input terminal (−) and theoutput terminal (out) of the first operational amplifier OA1. The firstreset switch RSW1 controls the connection of both ends of the firstfeedback capacitor Cfb1. When the first reset switch RSW1 is turned onsuch that both ends of the first feedback capacitor Cfb1 may beelectrically connected, the first feedback capacitor Cfb1 may be reset.

The output voltage Vout1 of the first operational amplifier OA1 may bedefined as in Equation 1 below:

$\begin{matrix}{{{Vout}1} = \frac{{Cm}1 \times {Vt}1}{{Cfb}1}} & \lbrack {{Equation}1} \rbrack\end{matrix}$where Vout1 denotes the output voltage of the first operationalamplifier OA1, Cm1 denotes the first mutual capacitance, Cfb1 denotesthe capacitance of the first feedback capacitor, and Vt1 denotes thevoltage charged in the first mutual capacitance Cm1.

The first analog-to-digital converter 333 may convert the output voltageVout1 stored in the first storage capacitor Cs1 into first digital dataand output the first digital data.

As shown in FIG. 18 , the sensor electrode layer SENL may determinewhether there is a user's touch by sensing voltages charged in the firstmutual capacitances Cm1.

FIG. 19 is an enlarged plan view showing the sensor area of FIG. 17 indetail.

For convenience of illustration, FIG. 19 shows only two sensingelectrodes RE adjacent to each other in the first direction (x-axisdirection) and two driving electrodes TE adjacent to each other in thesecond direction (y-axis direction). However, the disclosure is notlimited thereto.

Referring to FIG. 19 , each of the driving electrodes TE, the sensingelectrodes RE and the dummy patterns DE may have, but is not limited to,a substantially quadrangular shape. The driving electrodes TE, thesensing electrodes RE, the dummy patterns DE, the first connection unitsBE1 and the second connection units BE2 may be formed in a substantiallymesh topology when viewed from the top.

The sensing electrodes RE may be arranged or disposed in the firstdirection (x-axis direction) and electrically connected to one another.The driving electrodes TE may be arranged or disposed in the seconddirection (y-axis direction) and may be electrically connected to oneanother. The dummy patterns DE may be surrounded by the drivingelectrodes TE and the sensing electrodes RE, respectively. The drivingelectrodes TE, the sensing electrodes RE and the dummy patterns DE maybe electrically separated from each other. The driving electrodes TE,the sensing electrodes RE and the dummy patterns DE may be disposedapart from each other.

In order to electrically separate the sensing electrodes RE from thedriving electrodes TE at their intersections, the driving electrodes TEadjacent to each other in the second direction (y-axis direction) may beconnected through the first connection units BE1, and the sensingelectrodes RE adjacent to each other in the first direction (x-axisdirection) may be connected through second connection units BE2. Thefirst connection unit BE1 may be formed or disposed on a different layerfrom the driving electrodes TE and may be connected to the drivingelectrodes TE through the first contact holes CNT1. For example, thefirst connection unit BE1 may be disposed on a second buffer layer BF2shown in FIG. 21 , and the driving electrodes TE may be disposed on afirst sensor insulating layer TINS1 shown in FIG. 21 .

Each of the first connection units BE1 may be bent at least once. InFIG. 19 , the first connection units BE1 may be bent in the shape ofangle brackets, for example “<” or “>”, but the shape of the firstconnection units BE1 is not limited thereto. Since the drivingelectrodes TE adjacent to each other in the second direction (y-axisdirection) may be connected by the first connection units BE1, even ifany of the first connection units BE1 is disconnected, the drivingelectrodes TE may still be stably connected with each other. Althoughtwo adjacent ones of the driving electrodes TE are connected by twofirst connection units BE1 in the example shown in FIG. 19 , but thenumber of first connection units BE1 is not limited thereto.

The second connection unit BE2 is formed or disposed on a same layer asthe sensing electrodes RE and may have a shape extended from the sensingelectrodes RE. The sensing electrodes RE and the second connection unitBE2 may be formed of the same or similar material. For example, thesensing electrodes RE and the second connection unit BE2 may be formedor disposed on the first sensor insulating layer TINS1 shown in FIG. 19.

As shown in FIG. 19 , the first connection units BE1 electricallyconnecting the driving electrodes TE adjacent to each other in thesecond direction (y-axis direction) may be disposed on the second bufferlayer BF2, while the driving electrodes TE, the sensing electrodes RE,the dummy patterns DE and the second connection units BE2 may bedisposed on the first sensor insulating layer TISL1. Therefore, thedriving electrodes TE and the sensing electrodes RE may be electricallyseparated from each other at their intersections, while the sensingelectrodes RE may be electrically connected with one another in thefirst direction (x-axis direction), and the driving electrodes TE may beelectrically connected with each other in the second direction (y-axisdirection).

FIG. 20 is an enlarged plan view showing the sensor electrodes and theconnection units of FIG. 19 . FIG. 20 is an enlarged plan view of areaA-1 of FIG. 19 .

Referring to FIG. 20 , the driving electrodes TE, the sensing electrodesRE, the first connection units BE1 and the second connection units BE2may be formed in a substantially mesh topology when viewed from the top.The dummy patterns DE may be formed or disposed in a substantially meshtopology when viewed from the top. If the sensor electrode layer SENLincluding the driving electrodes TE and the sensing electrodes RE isformed or disposed directly on an encapsulation layer TFEL as shown inFIG. 21 , the distance between the second electrode of the emissionmaterial layer EML and the driving electrode TE or the sensing electrodeRE of the sensor electrode layer SENL is close. As a result, a largeparasitic capacitance may be formed between the second electrode of theemission material layer EML and the driving electrode TE or the sensingelectrode RE of the sensor electrode layer SENL. Since the parasiticcapacitance is proportional to the area where the second electrode ofthe emission material layer EML overlaps with the driving electrode TEor the sensing electrode RE of the sensor electrode layer SENL. For thisreason, in order to reduce the parasitic capacitance, it is desired thatthe driving electrodes TE and the sensing electrodes RE are formed in asubstantially mesh topology when viewed from the top.

The driving electrodes TE, the sensing electrodes RE, the dummy patternsDE and the second connection units BE2 may be formed or disposed in asame layer, and thus they may be spaced apart from each other. There maybe a gap between the driving electrode TE and the sensing electrode RE,between the driving electrode TE and the second connection unit BE2,between the driving electrode TE and the dummy pattern DE, and betweenthe sensing electrode RE and the dummy pattern DE. For convenience ofillustration, the boundary between the driving electrode TE and thesensing electrode RE, the boundary between the driving electrode TE andthe second connection unit BE2, and the boundary between the sensingelectrode RE and the second connection unit BE2 are indicated by dashedlines in FIG. 20 .

The first connection units BE1 may be connected to the drivingelectrodes TE through the first contact holes CNT1, respectively. Oneend of each of the first connection units BE1 may be connected to one ofthe driving electrodes TE adjacent to each other in the second direction(y-axis direction) through a first contact hole CNT1. The other end ofeach of the first connection units BE1 may be connected to another oneof the driving electrodes TE adjacent to each other in the seconddirection (y-axis direction) through a first contact hole CNT1. Thefirst connection units BE1 may overlap the driving electrodes TE and thesensing electrode RE. Alternatively, the first connection unit BE1 mayoverlap the second connection unit BE2 instead of the sensing electrodeRE. Alternatively, the first connection unit BE1 may overlap the sensingelectrode RE as well as the second connection unit BE2. Since the firstconnection unit BE1 may be formed or disposed on a different layer fromthe driving electrodes TE, the sensing electrodes RE and the secondconnection unit BE2, it is possible to prevent a short-circuit frombeing created in the sensing electrode RE and/or the second connectionunit BE2 even though they overlap the sensing electrode RE and/or thesecond connection unit BE2.

The second connection unit BE2 may be disposed between the sensingelectrodes RE. The second connection unit BE2 is formed or disposed on asame layer as the sensing electrodes RE and may be extended from each ofthe sensing electrodes RE. Therefore, the second connection unit BE2 maybe connected to the sensing electrodes RE without any additional contacthole.

Sub-pixels R, G and B may include a first sub-pixel R emitting a firstcolor, a second sub-pixel G emitting a second color, and a thirdsub-pixel B emitting a third color. Although the first sub-pixel R is ared sub-pixel, the second sub-pixel G is a green sub-pixel and the thirdsub-pixel B is a blue sub-pixel in the example shown in FIG. 20 , thedisclosure is not limited thereto. Although the first sub-pixel R, thesecond sub-pixel G and the third sub-pixel B have a substantiallyquadrangular shape when viewed from the top in the example shown in FIG.20 , the disclosure is not limited thereto. For example, the firstsub-pixel R, the second sub-pixel G and the third sub-pixel B may have asubstantially polygonal shape other than a substantially quadrangular,or a substantially circular or substantially elliptical shape whenviewed from the top. Although FIG. 20 illustrates that the thirdsub-pixel B has the largest size while the second sub-pixel G has thesmallest size, the disclosure is not limited thereto.

A pixel P refers to a group of sub-pixels capable of representinggrayscales. In the example shown in FIG. 20 , a pixel P may include afirst sub-pixel R, two second sub-pixels G and a third sub-pixel B. Itis, however, to be understood that the disclosure is not limitedthereto. For example, a pixel P may include a first sub-pixel PX1, asecond sub-pixel PX2 and a third sub-pixel PX3.

Since the driving electrodes TE, the sensing electrodes RE, the dummypatterns DE, the first connection units BE1 and the second connectionunits BE2 are formed in a substantially mesh topology, the sub-pixels R,G and B may not overlap the driving electrodes TE, the sensingelectrodes RE, the dummy patterns DE, the first connection units BE1 andthe second connection units BE2. Accordingly, it may be possible toprevent that the light output from the sub-pixels R, G and B is coveredby the driving electrodes TE, the sensing electrodes RE, the dummypatterns DE, the first connection units BE1 and the second connectionunits BE2 and thus the luminance of light may be reduced.

FIG. 21 is a schematic cross-sectional view taken along line I-I′ ofFIG. 20 .

Referring to FIG. 21 , the display layer DISL including the first bufferlayer BF1, the thin-film transistor layer TFTL, the emission materiallayer EML and the encapsulation layer TFEL may be disposed on thesubstrate SUB.

The first buffer layer BF1 may be formed or disposed on one surface ofthe substrate SUB. The first buffer layer BF1 may be formed or disposedon one surface of the substrate SUB in order to protect the thin-filmtransistors 120 and organic emitting layer 172 of the light-emittingelement layer EML from moisture that is likely to permeate through thesubstrate SUB. The first buffer layer BF1 may be made up of multipleinorganic layers sequentially stacked on one another. For example, thefirst buffer layer BF1 may be made up of multiple layers in which one ormore inorganic layers of a silicon nitride layer, a silicon oxynitridelayer, a silicon oxide layer, a titanium oxide layer and an aluminumoxide layer are alternately stacked on one another. The first bufferlayer BF1 may be eliminated.

The thin-film transistor layer TFTL includes thin-film transistors 120,a gate insulating layer 130, an interlayer dielectric layer 140, aprotective layer 150, and a planarization layer 160.

The thin-film transistors 120 may be formed or disposed on the firstbuffer layer BF1. Each of the thin-film transistor 120 includes anactivate layer 121, a gate electrode 122, a source electrode 123, and adrain electrode 124. In FIG. 21 , the thin-film transistors 120 may betop-gate transistors in which the gate electrode 122 may be located ordisposed above the active layer 121. It is, however, to be understoodthat the disclosure is not limited thereto. For example, the thin-filmtransistors 120 may be bottom-gate transistors in which the gateelectrode 122 may be located or disposed below the active layer 121, oras double-gate transistors in which the gate electrodes 122 may bedisposed above and below the active layer 121.

The active layer 121 may be formed or disposed on the first buffer layerBF1. The active layer 121 may include polycrystalline silicon, singlecrystal silicon, low-temperature polycrystalline silicon, amorphoussilicon, or an oxide semiconductor. The oxide semiconductor may include,for example, a binary compound (ABx), a ternary compound (ABxCy) and aquaternary compound (ABxCyDz) containing indium, zinc, gallium, tin,titanium, aluminum, hafnium (Hf), zirconium (Zr), magnesium (Mg), orother materials within the spirit and the scope of the disclosure. Forexample, the active layer 121 may include an oxide including indium,tin, and titanium (ITZO) or an oxide including indium, gallium and tin(IGZO). A light-blocking layer for blocking external light incident onthe active layer 121 may be formed or disposed between the buffer layerand the active layer 121.

The gate insulating layer 130 may be formed or disposed on the activelayer 121. The gate insulating layer 130 may be formed of an inorganiclayer, for example, a silicon nitride layer, a silicon oxynitride layer,a silicon oxide layer, a titanium oxide layer, or an aluminum oxidelayer.

The gate electrodes 122 and gate lines may be formed or disposed on thegate insulating layer 130. The gate electrode 122 may overlap the activelayer 121. The gate electrodes 122 and the gate lines may be made up ofa single layer or multiple layers of one of molybdenum (Mo), aluminum(Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium(Nd) and copper (Cu) or an alloy thereof.

A first interlayer dielectric layer 141 may be formed or disposed overthe gate electrode 122 and the gate line. The first interlayerdielectric layer 141 may be formed of an inorganic layer, for example, asilicon nitride layer, a silicon oxynitride layer, a silicon oxidelayer, a titanium oxide layer, or an aluminum oxide layer.

A capacitor electrode 125 may be formed or disposed on the firstinterlayer dielectric layer 141. The capacitor electrode 125 may overlapthe gate electrode 122. The capacitor electrode 125 may be made up of asingle layer or multiple layers of one of molybdenum (Mo), aluminum(Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium(Nd) and copper (Cu) or an alloy thereof.

A second interlayer dielectric layer 142 may be formed or disposed overthe capacitor electrode 125. The second interlayer dielectric layer 142may be formed of an inorganic layer, for example, a silicon nitridelayer, a silicon oxynitride layer, a silicon oxide layer, a titaniumoxide layer, or an aluminum oxide layer.

The source electrode 123 and the drain electrode 124 may be formed ordisposed on the second interlayer dielectric layer 142. Each of thesource electrode 123 and the drain electrode 124 may be connected to theactive layer 121 through a contact hole penetrating through theinterlayer dielectric layer 140. The source electrode 123 and the drainelectrode may be made up of a single layer or multiple layers of one ofmolybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti),nickel (Ni), neodymium (Nd) and copper (Cu) or an alloy thereof.

The protective layer 150 may be formed or disposed on the sourceelectrode 213 and the drain electrode 124 in order to insulate thethin-film transistors 120. The protective layer 150 may be formed of aninorganic layer, for example, a silicon nitride layer, a siliconoxynitride layer, a silicon oxide layer, a titanium oxide layer, or analuminum oxide layer.

The planarization layer 160 may be formed or disposed on the protectivelayer 150 to provide a flat surface over the step differences of thethin-film transistors 120. The planarization layer 160 may be formed ofan organic layer such as an acryl resin, an epoxy resin, a phenolicresin, a polyamide resin and a polyimide resin.

The emission material layer EML is formed or disposed on the thin-filmtransistor layer TFTL. The emission material layer EML includeslight-emitting elements 170 and a bank 180.

The light-emitting elements 170 and the bank 180 are formed or disposedon the planarization layer 160. Each of the light-emitting elements 170may include a first electrode 171, an organic emitting layer 172, and asecond electrode 173. In FIG. 21 , the light-emitting elements 170 areorganic light-emitting diodes including the organic emitting layer 172.

The first electrode 171 may be formed or disposed on the planarizationlayer 160. Although the first electrode 171 is connected to the drainelectrode 124 of the thin-film transistor 120 through the contact holepenetrating through the protective layer 150 and the planarization layer160 in the example shown in FIG. 21 , the disclosure is not limitedthereto. The first electrode 171 may be connected to the sourceelectrode 123 of the thin-film transistor 120 through the contact holepenetrating through the protective layer 150 and the planarization layer160.

In the top-emission organic light-emitting diode that light exits fromthe organic emitting layer 172 toward the second electrode 173, thefirst electrode 171 may be made of a metal material having a highreflectivity such as a stack structure of aluminum and titanium(Ti/Al/Ti), a stack structure of aluminum and ITO (ITO/Al/ITO), an APCalloy and a stack structure of APC alloy and ITO (ITO/APC/ITO). The APCalloy is an alloy of silver (Ag), palladium (Pd) and copper (Cu).

In the bottom-emission organic light-emitting diode that light exitsfrom the organic emitting layer 172 toward the first electrode 173, thefirst electrode 171 may be formed of a transparent conductive material(TCP) such as ITO and IZO that may transmit light, or asemi-transmissive conductive material such as magnesium (Mg), silver(Ag) and an alloy of magnesium (Mg) and silver (Ag). In such case, whenthe first electrode 171 is made of a semi-transmissive metal material,the light extraction efficiency may be increased by using microcavities.

The bank 180 may partition the first electrode 171 on the planarizationlayer 250 in order to define each of the sub-pixels PX. The bank layer180 may be formed or disposed to cover or overlap an edge of the firstelectrode 171. The bank 180 may be formed of an organic layer such as anacryl resin, an epoxy resin, a phenolic resin, a polyamide resin and apolyimide resin.

In each of the sub-pixels PX, the first electrode 171, the organicemitting layer 172 and the second electrode 173 so that holes from thefirst electrode 171 and electrons from the second electrode 173 arecombined with each other in the organic emitting layer 172 to emitlight.

The organic emitting layer 172 is formed or disposed on the firstelectrode 171 and the bank 180. The organic emitting layer 172 mayinclude an organic material and emit light of a certain color. Forexample, the organic emitting layer 172 may include a hole transportinglayer, an organic material layer, and an electron transporting layer. Inthe example shown in FIG. 20 , the organic emitting layer 172 of thefirst sub-pixel R may emit red light, the organic emitting layer 172 ofthe second sub-pixel G may emit green light, and the organic emittinglayer 172 of the third sub-pixel B may emit blue light.

Alternatively, the organic emitting layers 172 of the sub-pixels PX maybe formed as a single layer to emit white light, ultraviolet light, orblue light. In the example shown in FIG. 20 , the first sub-pixel R mayoverlap a first color filter transmitting red light, the secondsub-pixel G may overlap a second color filter transmitting green light,and the third sub-pixel B may overlap a third color filter transmittingblue light. The first color filter, the second color filter and thethird color filter may be disposed on the encapsulation layer TFEL. InFIG. 20 , the first sub-pixel R may overlap a first wavelengthconverting layer that converts blue light into red light, the secondsub-pixel G may overlap a second wavelength converting layer thatconverts blue light into green light, and the third sub-pixel B mayoverlap a transmissive layer that outputs blue light without convertingit. The first wavelength converting layer, the second wavelengthconverting layer and the third wavelength converting layer may bedisposed on the encapsulation layer TFEL. For example, the firstwavelength converting layer may be disposed between the encapsulationlayer TFEL and the first color filter, the second wavelength convertinglayer may be disposed between the encapsulation layer TFEL and thesecond color filter, and the third wavelength converting layer may bedisposed between the encapsulation layer TFEL and the third colorfilter.

The second electrode 173 is formed or disposed on the organic emittinglayer 172. The second electrode 173 may be formed or disposed to coveror overlap the organic emitting layer 172. The second electrode 173 maybe a common layer formed or disposed across the sub-pixels PX. A cappinglayer may be formed or disposed on the second electrode 173.

In the top-emission organic light-emitting diode, the second electrode173 may be formed of a transparent conductive material (TCP) such as ITOand IZO that may transmit light, or a semi-transmissive conductivematerial such as magnesium (Mg), silver (Ag) and an alloy of magnesium(Mg) and silver (Ag). When the second electrode 173 is formed of asemi-transmissive conductive material, the light extraction efficiencymay be increased by using microcavities.

In the bottom-emission organic light-emitting diode, the secondelectrode 173 may be made of a metal material having a high reflectivitysuch as a stack structure of aluminum and titanium (Ti/Al/Ti), a stackstructure of aluminum and ITO (ITO/Al/ITO), an APC alloy and a stackstructure of APC alloy and ITO (ITO/APC/ITO). The APC alloy is an alloyof silver (Ag), palladium (Pd) and copper (Cu).

The encapsulation layer TFFL may be formed or disposed on the emissionmaterial layer EML. The encapsulation layer TFEL may be disposed on thesecond electrode 173. The encapsulation layer TFEL may include at leastone inorganic layer to prevent oxygen or moisture from permeating intothe organic emitting layer 172 and the second electrode 173. Theencapsulation layer TFEL may include at least one organic layer toprotect the light-emitting element layer EML from foreign substancessuch as dust. For example, the encapsulation layer TFEL may include afirst inorganic layer disposed on the second electrode 173, an organiclayer disposed on the first inorganic layer, and a second inorganiclayer disposed on the organic layer. The first inorganic layer and thesecond inorganic layer may be formed of, but is not limited to, asilicon nitride layer, a silicon oxynitride layer, a silicon oxidelayer, a titanium oxide layer, or an aluminum oxide layer. The organiclayer may be formed of, but is not limited to, an acryl resin, an epoxyresin, a phenolic resin, a polyamide resin and a polyimide resin.

The sensor electrode layer SEL may be formed or disposed on theencapsulation layer TFEL. The sensor electrode layer SENL may includethe second buffer layer BF2, the driving electrodes TE, the sensingelectrodes RE, the dummy patterns DE, the second connection units BE2,the first driving lines TL1, the second driving lines TL2, the sensinglines RL, the guard lines GL1, GL2, GL3, GL4 and GL5, the ground linesGRL1, GRL2, GRL3 and GRL4, the first sensor insulating layer TINS1, andthe second sensor insulating layer TINS2. FIG. 21 shows only the drivingelectrode TE, the sensing electrode RE and the first connection unit BE1of the sensor electrode layer SENL. However, the disclosure is notlimited thereto.

The second buffer layer BF2 may be formed of an inorganic layer, forexample, a silicon nitride layer, a silicon oxynitride layer, a siliconoxide layer, a titanium oxide layer, or an aluminum oxide layer.

The first connection units BE1 may be formed or disposed on the secondbuffer layer BF2. The first connection units BE1 may be disposed tooverlap the bank 180 in the third direction (z-axis direction). Thefirst connection units BE1 may be made up of, but is not limited to, astack structure of aluminum and titanium (Ti/Al/Ti), a stack structureof aluminum and ITO (ITO/Al/ITO), an APC alloy and a stack structure ofAPC alloy and ITO (ITO/APC/ITO).

The first sensor insulating layer TINS1 may be formed or disposed on thefirst connection units BE1. The first sensor insulating layer TINS1 maybe formed of an inorganic layer, for example, a silicon nitride layer, asilicon oxynitride layer, a silicon oxide layer, a titanium oxide layer,or an aluminum oxide layer. Alternatively, the first sensor insulatinglayer TINS1 may be formed of an organic layer such as an acryl resin, anepoxy resin, a phenolic resin, a polyamide resin and a polyimide resin.

The driving electrodes TE, the sensing electrodes RE, the dummy patternsDE, the second connection units BE2, the first driving lines TL1, thesecond driving lines TL2, the sense lines RL, the guard lines GL1, GL2,GL3, GL4 and GL5, and the ground lines GRL1, GRL2, GRL3 and GRL4 may beformed or disposed on the first sensor insulating layer TINS1. Thedriving electrodes TE, the sensing electrodes RE, the dummy patterns DE,and the second connection units BE2 may be disposed to overlap the bank180 in the third direction (z-axis direction). The driving electrodesTE, the sensing electrodes RE, the dummy patterns DE, the secondconnection units BE2, the first driving lines TL1, the second drivinglines TL2, the sensing lines RL, the guard lines GL1, GL2, GL3, GL4 andGL5 and the ground lines GRL1, GRL2, GRL3 and GRL4 may be formed as, butis not limited to, a stack structure of aluminum and titanium(Ti/Al/Ti), a stack structure of aluminum and ITO (ITO/Al/ITO), an APCalloy, and a stack structure of APC alloy and ITO (ITO/APC/ITO).

First contact holes CNT1 may be formed or disposed through the firsttouch second layer TINS1, via which the first connection units BE1 areexposed. The driving electrodes TE may be connected to the firstconnection units BE1 through the first contact holes CNT1.

The second sensor insulating layer TINS2 may be formed on the drivingelectrodes TE. The second sensor insulating layer TINS2 may provide aflat surface over the level difference of the sensor electrode layerSENL. The second sensor insulating layer TINS2 may be formed of aninorganic layer, for example, a silicon nitride layer, a siliconoxynitride layer, a silicon oxide layer, a titanium oxide layer, or analuminum oxide layer. Alternatively, the second sensor insulating layerTINS2 may be formed of an organic layer such as an acryl resin, an epoxyresin, a phenolic resin, a polyamide resin and a polyimide resin.

As shown in FIG. 21 , the first connection units BE1 electricallyconnecting the driving electrodes TE adjacent to each other in thesecond direction (y-axis direction) may be formed or disposed on thesecond buffer layer BF2, while the driving electrodes TE, the sensingelectrodes RE and the second connection units BE2 may be formed ordisposed on the first sensor insulating layer TISL1. Therefore, thedriving electrodes TE and the sensing electrodes RE may be electricallyseparated from each other at their intersections, while the sensingelectrodes RE may be electrically connected with one another in thefirst direction (x-axis direction), and the driving electrodes TE may beelectrically connected with each other in the second direction (y-axisdirection).

FIG. 22 is an enlarged plan view showing an example of the antenna areaof FIG. 17 . In FIG. 22 , the first conductive pattern AP of the antennaarea APA may be formed as a patch antenna for mobile communications.

Referring to FIG. 22 , the antenna area APA may include first conductivepatterns AP1 to AP4. Although the antenna area APA includes four firstconductive patterns AP1 to AP4 in the example shown in FIG. 20 , thedisclosure is not limited thereto. For example, the antenna area APA mayinclude four to sixteen first conductive patterns.

Each of the first conductive patterns AP1 to AP4 may be formed in asubstantially mesh topology when viewed from the top. In 5G mobilecommunications recently available, the frequency of approximately orabout 28 GHz or about 39 GHz may be used. Therefore, for 5G mobilecommunications, the length a of each of the first conductive patternsAP1 to AP4 in one direction DR1 may be approximately or about 2.17 mm,while the length b of the other direction DR2 may be approximately orabout 2.06 mm. The area of each of the first conductive patterns AP1 toAP4 may be approximately or in a range of about 4 to about 5 mm² whenviewed from the top. The distance C between the centers of adjacent onesof the first conductive patterns in the direction DR1 may beapproximately or about 6 mm.

Each of the first conductive patterns AP1 to AP4 may be connected to theradio frequency driver 350 through a feeding line FDL. The firstconductive patterns AP1 to AP4 may be commonly connected to one feedingline FDL. A feeding line FDL connected to one of the first conductivepatterns AP1 to AP4 and a feeding line FDL connected to another one ofthe first conductive patterns AP1 to AP4 may be merged into one linebetween the two first conductive patterns.

The radio frequency driver 350 may change the phase and amplify theamplitude of the radio frequency signal received from the firstconductive patterns AP1 to AP4 through the feeding line FDL. The radiofrequency driver 350 may transfer the radio frequency signal to thefirst conductive patterns AP1 to AP4 through the feeding line FDL.

FIG. 23 is an enlarged plan view showing the first conductive patternsof FIG. 22 in detail. FIG. 24 is an enlarged plan view showing anintersection between the first conductive patterns of FIG. 22 in detail.FIG. 23 shows the first conductive pattern AP that may be formed in asubstantially mesh topology and may have a substantially diamond shapewhen viewed from the top.

Referring to FIGS. 23 and 24 , the first conductive pattern AP may beformed in a substantially mesh topology when viewed from the top. Thefirst conductive pattern AP may have the width of approximately or about2.5 μm and a thickness of approximately or about 2,400 Å m or less.

The first conductive pattern AP may have a shape in which asubstantially quadrangular pattern such as a diamond may be repeatedwhen viewed from the top. The length d of the diamond in the directionDR1 may be smaller than the length e in the other direction DR2. Thelength d of the diamond in the direction DR1 may be half the length e inthe other direction DR2. For example, the length d of the firstconductive pattern AP defined as a diamond in the direction DR1 may beapproximately or about 260 μm, and the length e in the other directionDR2 may be approximately or about 130 μm. The angle θ1 formed by twovertices facing each other in the direction DR2 may be larger than theangle θ2 formed by two vertices facing each other in the direction DR1.

Each vertex of the diamond may be the intersection where at least twosides intersect. In order to prevent the first conductive pattern APfrom being formed or disposed in an inverted taper shape at theintersection due to overetching, a dummy pattern DM may be formed ordisposed at the intersection. The minimum distance and the maximumdistance of the dummy pattern DM in the direction DR1 may be smallerthan the minimum distance and the maximum distance of the dummy patternDM in the other direction DR2. For example, the minimum distance of thedummy pattern DM in the direction DR1 may be approximately or about 9.25μm, and the maximum distance may be approximately or about 11 μm. Theminimum distance of the dummy pattern DM may be approximately or about13.5 μm, and the maximum distance may be approximately or about 15.5 μmin the direction DR2.

FIG. 25 is a schematic cross-sectional view taken along line II-II′ ofFIG. 24 .

Referring to FIG. 25 , the first conductive pattern AP may be disposedon the first sensor insulating layer TINS1. The first conductive patternAP may be made of the same or similar material on a same layer as thedriving electrodes TE, the sensing electrodes RE and the dummy patternsDE. The first conductive pattern AP may be made of the same or similarmaterial on the same or similar material as the first driving lines TL1,the second driving lines TL2, the sensing lines RL, the guard lines GL1,GL2, GL3, GL4 and GL5, and the ground lines GRL1, GRL2, GRL3 and GRL4.

In order for the patch antenna to emit electromagnetic waves, a secondconductive pattern GP overlapping the first conductive pattern AP in thethird direction (z-axis direction) is required. It is, however, to benoted that when the first sensor insulating layer TINS1 between thefirst conductive pattern AP and the second conductive pattern GP is madeof a material having a low dielectric constant, the second conductivepattern GP may be eliminated. The second conductive pattern GP may bedisposed on the second buffer layer BF2. The second conductive patternGP may be made of the same or similar material on a same layer as thefirst connection units BE1.

When the first conductive pattern AP is formed in a substantially loopshape or a substantially coil shape to be utilized as an antenna for anRFID tag for near field communications, by forming or disposing thesecond conductive pattern GP overlapping the first conductive patternAP, it is possible to reduce or prevent the first electrode 171 and thesecond electrode 173 of the display layer DISL from being affected byelectromagnetic waves emitted from the first conductive pattern AP.

As shown in FIG. 25 , when the first conductive pattern AP is disposedon the first sensor insulating layer TINS1 and the second conductivepattern GP is disposed on the second buffer layer BF2, the firstconductive pattern of the antenna area APA may be formed without anyadditional process.

When the first conductive pattern AP overlaps the first ground line GRL1and the third ground line GRL3 in the antenna area APA, the first groundline GRL1 and the third ground line GRL3 disposed in the antenna areaAPA may be disposed on the second buffer layer BF2, and the first groundline GRL1 and the third ground line GRL3 disposed in the area other thanthe antenna area APA may be disposed on the first sensor insulatinglayer TINS1. The second conductive pattern GP may be connected to atleast one of the first ground line GRL1 and the third ground line GRL3.

FIG. 26 is a schematic cross-sectional view taken along line II-II′ ofFIG. 24 .

Referring to FIG. 26 , the first conductive pattern AP may be disposedon the second sensor insulating layer TINS2.

The second conductive pattern GP overlapping the first conductivepattern AP in the third direction (z-axis direction) may be disposed onthe first sensor insulating layer TINS1. The second conductive patternGP may be made of the same or similar material on a same layer as thedriving electrodes TE, the sensing electrodes RE and the dummy patternsDE. The second conductive pattern GP may be made of the same or similarmaterial on a same or similar material as the first driving lines TL1,the second driving lines TL2, the sensing lines RL, the guard lines GL1,GL2, GL3, GL4 and GL5, and the ground lines GRL1, GRL2, GRL3 and GRL4.

It is to be noted that the second conductive pattern GP may beeliminated when the first conductive pattern AP overlaps the firstground line GRL1 and the third ground line GRL3 in the antenna area APA.

FIG. 27 is a schematic cross-sectional view taken along line II-II′ ofFIG. 24 .

Referring to FIG. 27 , the first conductive pattern AP may include afirst sub conductive pattern SAP1 and a second sub conductive patternSAP2.

The first sub conductive pattern SAP1 may be disposed on the firstsensor insulating layer TINS1. The first sub conductive pattern SAP1 maybe made of the same or similar material on a same layer as the drivingelectrodes TE, the sensing electrodes RE and the dummy patterns DE. Thefirst conductive pattern SGAP1 may be made of the same or similarmaterial on the same or similar material as the first driving lines TL1,the second driving lines TL2, the sensing lines RL, the guard lines GL1,GL2, GL3, GL4 and GL5, and the ground lines GRL1, GRL2, GRL3 and GRL4.

The second sub conductive pattern SAP2 may be disposed on the secondsensor insulating layer TINS2. The second sub conductive pattern SAP2may be connected to the first sub conductive pattern SAP1 through asecond contact hole H2 penetrating through the second sensor insulatinglayer TINS2 to expose the first sub conductive pattern SAP1.

The second conductive pattern GP overlapping the first conductivepattern AP in the third direction (z-axis direction) may be disposed onthe second buffer layer BF2. The second conductive pattern GP may bemade of the same or similar material on a same layer as the firstconnection units BEL

When the first conductive pattern AP overlaps the first ground line GRL1and the third ground line GRL3 in the antenna area APA, the first groundline GRL1 and the third ground line GRL3 disposed in the antenna areaAPA may be disposed on the second buffer layer BF2, and the first groundline GRL1 and the third ground line GRL3 disposed in the area other thanthe antenna area APA may be disposed on the first sensor insulatinglayer TINS1. The second conductive pattern GP may be connected to atleast one of the first ground line GRL1 and the third ground line GRL3.

FIG. 28 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

An embodiment of FIG. 28 may be different from an embodiment of FIG. 17in that an antenna area APA may be disposed in a sensor peripheral areaTPA on outer sides of the four sides of a sensor area TSA. In FIG. 28 ,the antenna area APA including the first conductive pattern AP may bedisposed in the sensor peripheral area TPA on the upper outer side ofthe sensor area TSA, in the sensor peripheral area TPA on the rightouter side of the sensor area TSA, and at a corner between the upperside and the right side of the display panel 300, as in FIG. 4 . In FIG.28 , the first conductive pattern AP of the antenna area APA may beelectrically connected to the display circuit board 310 where the radiofrequency driver 350 may be disposed, as in FIG. 8 .

Referring to FIG. 28 , a first conductive pattern AP of the antenna areaAPA may be disposed in the sensor peripheral area TPA on the upper outerside, the left outer side, the right outer side and the lower outer sideof the sensor area TSA. The first conductive pattern AP of the antennaarea APA may be disposed to surround the upper side, the left side andthe right side of the sensor area TSA except for the lower side.

Alternatively, the first conductive pattern AP of the antenna area APAmay be disposed to surround the four sides of the sensor area TSA. Whenthe first conductive pattern AP of the antenna area APA is disposed tosurround the four sides of the sensor area TSA, it may overlap the firstdriving lines TL1, the second driving lines TL2 and the sensing lines RLon the lower side of the sensor area TSA. In such case, in order toreduce the influence on the first driving lines TL1, the second drivinglines TL2 and the sensing lines RL by electromagnetic waves from thefirst conductive pattern of the antenna area APA, additional guard linesmay be disposed between the first conductive pattern and the firstdriving line TL1, between the first conductive pattern and the seconddriving line TL2, and between the first conductive pattern and thesensing line RL in the third direction (z-axis direction).

Alternatively, the first conductive pattern AP of the antenna area APAmay overlap the first ground line GRL1, the third ground line GRL3, thefirst guard line GL1 and the fourth guard line GL4 in the thirddirection (z-axis direction). Alternatively, the first conductivepattern AP of the antenna area APA may be disposed to overlap the firstground line GRL1 and the third ground line GRL3 in the third direction(z-axis direction).

The first conductive pattern AP of the antenna area APA may includeconductive pads CP disposed adjacent to the sensor pads TP1 and TP2 onone side of the display panel 300 in order to be electrically connectedto the display circuit board 310 on which the radio frequency driver 350is disposed. One of the conductive pads CP may be disposed on the leftouter side of the first sensor pad area TPA1 in which the first sensorpads TP1 are disposed, and another one may be disposed on the rightouter side of the second sensor pad area TPA2 in which the second sensorpads TP2 are disposed. The conductive pads CP may be electricallyconnected to the display circuit board 310 by an anisotropic conductivefilm.

The first conductive pattern AP of the antenna area APA may be formed ina substantially loop shape or a substantially coil shape, in which casethe first antenna of the antenna area APA may be an antenna for an RFIDtag, so that it may be utilized as an antenna for near fieldcommunications. Alternatively, the first conductive pattern AP of theantenna area APA may be a quadrangular patch, in which case the firstantenna of the antenna area APA may be a patch antenna, so that it maybe utilized as an antenna for mobile communications.

The schematic cross-sectional structure of the antenna area APA shown inFIG. 28 may be substantially identical to that shown in FIGS. 25 to 27 .

FIG. 29 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

An embodiment of FIG. 29 may be different from an embodiment of FIG. 17in that an antenna area APA may be disposed on an outer side of theground lines on a side of the display panel 300.

Referring to FIG. 29 , the antenna area APA of the display panel 300 maybe disposed on the upper side of the display panel 300 on the outer sideof the third ground line GRL3, which is the outermost one of the groundlines. In this instance, the antenna area APA may be completelyseparated spatially so that the antenna area APA does not overlap withthe sensor area TSA and the sensor peripheral area TPA in the thirddirection (z-axis direction). The third ground line GRL3 may be disposedbetween the antenna area APA and the sensor area TSA. Therefore, it ispossible to reduce or prevent the sensor electrodes TE and RE of thesensor region TSA from being affected the electromagnetic waves from thefirst conductive pattern AP of the antenna region APA.

Although the antenna area APA is disposed on the upper side end of thedisplay panel in the example shown in FIG. 29 , the disclosure is notlimited thereto. For example, the antenna area APA may be disposed onthe right side of the display panel 300 on the outer side of the firstground line GRL1, which is the rightmost one of the ground lines.Alternatively, the antenna area APA may be disposed on the left side ofthe display panel 300 on the outer side of the third ground line GRL3,which is the leftmost one of the ground lines.

Although FIG. 29 shows first conductive patterns AP formed as eightsquare patches, the number of the first conductive patterns AP is notlimited eight. In FIG. 29 , the second flexible film 360 where the radiofrequency driver 350 electrically connected to the first conductivepattern AP of the antenna area APA is disposed may be disposed on theupper side of the display panel 300, as in FIG. 6 .

The first conductive pattern AP of the antenna area APA may be aquadrangular patch, in which case the first antenna of the antenna areaAPA may be a patch antenna, so that it may be utilized as an antenna formobile communications. Alternatively, the first conductive pattern ofthe antenna area APA may be formed in a substantially loop shape or asubstantially coil shape, in which case the first antenna of the antennaarea APA may be an antenna for an RFID tag, so that it may be utilizedas an antenna for near field communications.

The schematic cross-sectional structure of the antenna area APA shown inFIG. 29 may be substantially identical to that shown in FIGS. 25 to 27 .

FIG. 30 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

An embodiment of FIG. 30 may be different from an embodiment of FIG. 17in that first conductive patterns AP of an antenna area APA may bedisposed in a sensor area TSA.

Referring to FIG. 30 , the first conductive patterns AP may beelectrically separated from driving electrodes TE, sensing electrodes REand dummy patterns DE. The driving electrodes TE, the sensing electrodesRE, the dummy patterns DE and the first conductive patterns AP may bespaced apart from one another.

Some of the sensing electrodes RE may be disposed closer to the firstconductive pattern AP than the dummy pattern DE, and the others of thesensing electrodes RE may be disposed closer to the dummy pattern DEthan the first conductive pattern AP. Each of the first conductivepatterns AP and the dummy patterns DE may be disposed to be surroundedby the sensing electrode RE.

Although each of the first conductive patterns AP is surrounded by thesensing electrode RE in the example shown in FIG. 30 , the disclosure isnot limited thereto. Each of the first conductive patterns AP may besurrounded by the driving electrode TE instead of the sensing electrodeRE.

The first conductive patterns AP adjacent to one another in the firstdirection (x-axis direction) may be connected to one another throughthird connection units BE3. The first conductive patterns AP adjacent toone another in the second direction (y-axis direction) may be connectedto one another through fourth connection units BE4.

In FIG. 30 , the second flexible film 360 where the radio frequencydriver 350 electrically connected to the first conductive pattern AP ofthe antenna area APA is disposed may be disposed on the upper side ofthe display panel 300, as in FIG. 6 . The first conductive patterns APmay be connected to the conductive pads CP via the feeding line FDL ofthe sensor peripheral area TPA, and the second flexible film 360 may beelectrically connected to the conductive pads CP via the anisotropicconductive film. Therefore, the first conductive patterns AP may beelectrically connected to the radio frequency driver 350 as shown inFIG. 31 .

As shown in FIG. 30 , the first conductive patterns AP may be formedinstead of the dummy patterns DE for reducing parasitic capacitancebetween the second electrode of the emission material layer EML and thedriving electrode TE or the sensing electrode RE. Therefore, the firstconductive patterns AP may be formed or disposed in the sensor area TSAwithout any additional process.

FIG. 32 is an enlarged plan view showing sensor electrodes and a firstconductive pattern of FIG. 30 . For convenience of illustration, FIG. 32shows only two sensing electrodes RE adjacent to each other in the firstdirection (x-axis direction) and two driving electrodes TE adjacent toeach other in the second direction (y-axis direction). However, thedisclosure is not limited thereto.

An embodiment of FIG. 32 may be different from an embodiment of FIG. 19in that a first conductive pattern AP may be surrounded by the sensingelectrode RE, and that a third connection unit BE3 for electricallyconnecting between first conductive patterns AP adjacent to one anotherin the first direction (x-axis direction) and a fourth connection unitBE4 for electrically connecting between first conductive patterns APadjacent to one another in the second direction (y-axis direction) maybe formed, instead of the dummy pattern DE.

Referring to FIG. 32 , each of the first conductive patterns AP mayhave, but is not limited to, a substantially rectangular shape whenviewed from the top. The first conductive patterns AP, the thirdconnection units BE3 and the fourth connection units BE4 may be formedin a substantially mesh topology when viewed from the top.

The first conductive patterns AP may be surrounded by the sensingelectrodes RE, respectively. The driving electrodes TE, the sensingelectrodes RE, the dummy patterns DE and the first conductive patternsAP may be electrically spaced apart from one another. The drivingelectrodes TE, the sensing electrodes RE, the dummy patterns DE and thefirst conductive patterns AP may be spaced apart from one another.

The first conductive patterns AP adjacent to one another in the firstdirection (x-axis direction) may be connected to one another throughthird connection units BE3. The third connection unit BE3 may include afirst sub connection unit BE31 and a second sub connection unit BE32 inorder to be electrically separated from the sensing electrodes RE andthe driving electrodes TE.

The first sub connection unit BE31 may be disposed on a same layer asthe driving electrodes TE, the sensing electrodes RE, and the dummypatterns DE. The first sub connection unit BE31 may be electricallyseparated from the driving electrodes TE, the sensing electrodes RE, andthe dummy patterns DE. The first sub connection unit BE31 may be spacedapart from the driving electrodes TE, the sensing electrodes RE, and thedummy patterns DE.

The second sub connection unit BE32 may be formed or disposed on adifferent layer from the driving electrodes TE and the sensingelectrodes RE, and may be connected to the first sub connection unitBE31 through a third contact holes CNT3. For example, the first subconnection unit BE31 may be disposed on the first sensor insulatinglayer TINS1 shown in FIG. 21 , and the second sub connection unit BE32may be disposed on the second buffer layer BF2 shown in FIG. 21 . Thesecond sub connection unit BE32 may overlap the driving electrode TE andthe sensing electrode RE in the third direction (z-axis direction).

The second sub connection unit BE32 may be bent at least once. In FIG.30 , the second sub connection unit BE32 is bent in the shape of anglebrackets, for example, “<” or “>”, but the shape of the secondconnection unit BE32 is not limited thereto.

The first conductive patterns AP adjacent to one another in the seconddirection (y-axis direction) may be connected to one another through thefourth connection units BE4. The fourth connection unit BE4 may bedisposed on a same layer as the driving electrodes TE, the sensingelectrodes RE, and the dummy patterns DE. The fourth connection unit BE4may be electrically separated from the driving electrodes TE, thesensing electrodes RE, and the dummy patterns DE. The fourth connectionunit BE4 may be spaced apart from the driving electrodes TE, the sensingelectrodes RE, and the dummy patterns DE.

As shown in FIG. 32 , the first conductive patterns AP adjacent to oneanother in the first direction (x-axis direction) may be electricallyconnected through the third connection units BE3 and the firstconductive patterns AP adjacent to one another in the second direction(y-axis direction) may be electrically connected through the fourthconnection units BE3, so that the first conductive patterns AP may beelectrically separated from the driving electrodes TE and the sensingelectrodes RE.

FIG. 33 is a schematic cross-sectional view taken along line III-III′ ofFIG. 32 .

Referring to FIG. 33 , the first conductive pattern AP may be disposedon the first sensor insulating layer TINS1. The first conductive patternAP may be made of the same or similar material on a same layer as thedriving electrodes TE, the sensing electrodes RE and the dummy patternsDE. The first conductive pattern AP may be made of the same or similarmaterial on the same or similar material as the first driving lines TL1,the second driving lines TL2, the sensing lines RL, the guard lines GL1,GL2, GL3, GL4 and GL5, and the ground lines GRL1, GRL2, GRL3 and GRL4.

The second conductive pattern GP may be disposed on the second bufferlayer BF2. The second conductive pattern GP may be made of the same orsimilar material on a same layer as the first connection units BEL Thesecond conductive pattern GP may be disposed to overlap the firstconductive pattern AP in the third direction (z-axis direction).

Each of the first conductive patterns AP may be formed in asubstantially loop shape, a substantially coil shape, or as arectangular patch. When each of the first conductive patterns AP isformed in a substantially loop shape or a substantially coil shape, itmay be utilized as an antenna for an RFID tag for near fieldcommunications. Alternatively, when each of the first conductivepatterns AP may be a quadrangular patch, it may be utilized as a patchantenna for mobile communications.

FIG. 34 is a schematic cross-sectional view taken along line III-III′ ofFIG. 32 ;

Referring to FIG. 34 , the first conductive pattern AP may be disposedon the second sensor insulating layer TINS2. In order to reduce theinfluence on the driving electrodes TE and the sensing electrodes RE byelectromagnetic waves from the first conductive pattern AP, the minimumdistance between the first conductive pattern AP and the sensingelectrode RE and the minimum distance between the first conductivepattern AP and the driving electrode TE may be 200 μm or more. To thisend, the thickness of the second sensor insulating layer TINS2 may be200 μm or more.

The second conductive pattern GP may be disposed on the first sensorinsulating layer TNIS1. The second conductive pattern GP may be made ofthe same or similar material on a same layer as the driving electrodesTE, the sensing electrodes RE and the dummy patterns DE. The secondconductive pattern GP may be made of the same or similar material on thesame or similar material as the first driving lines TL1, the seconddriving lines TL2, the sensing lines RL, the guard lines GL1, GL2, GL3,GL4 and GL5, and the ground lines GRL1, GRL2, GRL3 and GRL4. The secondconductive pattern GP may be disposed to overlap the first conductivepattern AP in the third direction (z-axis direction).

Each of the first conductive patterns AP may be formed in asubstantially loop shape, a substantially coil shape, or as arectangular patch. When each of the first conductive patterns AP isformed in a substantially loop shape or a substantially coil shape, itmay be used as an antenna for an RFID tag for near field communications.Alternatively, when each of the first conductive patterns AP may be aquadrangular patch, it may be utilized as a patch antenna for mobilecommunications.

FIG. 35 is a schematic cross-sectional view taken along line III-III′ ofFIG. 32 .

An embodiment of FIG. 35 may be different from an embodiment of FIG. 34in that a second conductive pattern GP may be made up of two layers.

The second conductive pattern GP may include a first sub conductivepattern SGP1 and a second sub conductive pattern SGP2. The first subconductive pattern SGP1 may be disposed on a second buffer layer BF2.The first sub conductive pattern SGP1 may be made of the same or similarmaterial on a same layer as the first connection units BE1.

The second sub conductive pattern SGP2 may be disposed on the firstsensor insulating layer TINS1. The second sub conductive pattern SGP2may be made of the same or similar material on a same layer as thedriving electrodes TE, the sensing electrodes RE and the dummy patternsDE. The second sub conductive pattern SGP2 may be made of the same orsimilar material on a same material as the first driving lines TL1, thesecond driving lines TL2, the sensing lines RL, the guard lines GL1,GL2, GL3, GL4 and GL5, and the ground lines GRL1, GRL2, GRL3 and GRL4.The second sub conductive pattern SGP2 may be connected to the first subconductive pattern SGP1 through a contact hole penetrating the firstsensor insulating layer TINS1.

FIG. 36 is an enlarged plan view showing first conductive patterns andsensor electrodes of FIG. 30 .

An embodiment of FIG. 36 may be different from an embodiment of FIG. 32in that a guard pattern GAP may be disposed between a sensing electrodeRE and a first conductive pattern AP.

Referring to FIG. 36 , the guard pattern GAP may be disposed to surroundthe first conductive pattern AP. The guard pattern GAP may be spacedapart from a first sub connection unit BE31 of a third connection unitBE3. The guard pattern GAP may be electrically floated or may beconnected to at least one of the ground lines GRL1 to GRL3 in the sensorperipheral area TPA to receive a ground voltage.

As the guard pattern GAP is disposed between the sensing electrode REand the first conductive pattern AP as shown in FIG. 36 , it is possibleto block the influence on the driving electrodes TE and the sensingelectrodes RE by electromagnetic waves from the first conductive patternAP.

FIG. 37 is a schematic cross-sectional view taken along line V-V of FIG.36 .

Referring to FIG. 37 , the first conductive pattern AP and the guardpattern GAP may be disposed on the first sensor insulating layer TINS1.The first conductive pattern AP and the guard pattern GAP may be made ofthe same or similar material on a same layer as the driving electrodesTE, the sensing electrodes RE and the dummy patterns DE. The firstconductive pattern AP may be made of the same or similar material on asame or similar material as the first driving lines TL1, the seconddriving lines TL2, the sensing lines RL, the guard lines GL1, GL2, GL3,GL4 and GL5, and the ground lines GRL1, GRL2, GRL3 and GRL4.

The second conductive pattern GP may be disposed on the second bufferlayer BF2. The second conductive pattern GP may be made of the same orsimilar material on a same layer as the first connection units BEL Thesecond conductive pattern GP may be disposed to overlap the firstconductive pattern AP in the third direction (z-axis direction).

Each of the first conductive patterns AP may be formed in asubstantially loop shape, a substantially coil shape, or as arectangular patch. When each of the first conductive patterns AP isformed in a substantially loop shape or a substantially coil shape, itmay be used as an antenna for an RFID tag for near field communications.Alternatively, when each of the first conductive patterns AP may be aquadrangular patch, it may be utilized as a patch antenna for mobilecommunications.

FIG. 38 is a schematic cross-sectional view taken along line V-V of FIG.36 .

An embodiment of FIG. 38 may be different from an embodiment of FIG. 37in that each of guard patterns GAP may include a first sub guard patternSGAP1 and a second sub guard pattern SGAP2.

Referring to FIG. 38 , the first sub guard pattern SGAP1 may be disposedon a second buffer layer BF2. The first sub guard pattern SGAP1 may bemade of the same or similar material on a same layer as the firstconnection units BEL

The second sub guard pattern SGAP2 may be disposed on the first sensorinsulating layer TINS1. The second sub guard pattern SGAP2 may be madeof the same or similar material on a same layer as the drivingelectrodes TE, the sensing electrodes RE and the dummy patterns DE. Thesecond sub guard pattern SGAP2 may be made of the same or similarmaterial on the same or similar material as the first driving lines TL1,the second driving lines TL2, the sensing lines RL, the guard lines GL1,GL2, GL3, GL4 and GL5, and the ground lines GRL1, GRL2, GRL3 and GRL4.The second sub guard pattern SGAP2 may be connected to the first subguard pattern SGAP1 through a contact hole penetrating the first sensorinsulating layer TINS1.

As shown in FIG. 38 , when the guard pattern GAP is made up of the twolayers of the first sub guard pattern SGAP1 and the second sub guardpattern SGAP2, it is possible to more effectively block the influence ondriving electrodes TE and the sensing electrodes RE by electromagneticwaves from the first conductive pattern AP.

FIG. 39 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

An embodiment of FIG. 39 may be different from an embodiment of FIG. 30in that proximity sensor electrodes PE may be disposed in a sensor areaTSA.

Referring to FIG. 39 , the proximity sensor electrodes PE may beelectrically separated from the driving electrodes TE, the sensingelectrodes RE, the dummy patterns DE and the first conductive patternsAP. The driving electrodes TE, the sensing electrodes RE, the dummypatterns DE, the first conductive patterns AP and the proximity sensorelectrodes PE may be spaced apart from one another.

Some of the driving electrodes TE may be disposed closer to theproximity sensor electrode PE than the dummy pattern DE, and the othersof the driving electrodes TE may be disposed closer to the dummy patternDE than the proximity sensor electrode PE. Each of the proximity sensorelectrodes PE and the dummy patterns DE may be surrounded by the drivingelectrode TE.

Although each of the first conductive patterns AP is surrounded by thesensing electrode RE and each of the proximity sensor electrodes PE issurrounded by the driving electrode TE in the example shown in FIG. 39 ,the disclosure is not limited thereto. Each of the first conductivepatterns AP may be surrounded by the driving electrode TE, and each ofthe proximity sensor electrodes PE may be surrounded by the sensingelectrode RE.

The proximity sensor electrodes PE adjacent to one another in the firstdirection (x-axis direction) may be connected through the fifthconnection units BE5. The proximity sensor electrodes PE adjacent to oneanother in the second direction (y-axis direction) may be connectedthrough the sixth connection units BE6. The proximity sensor electrodesPE may be connected to a proximity sensor line PL in the sensorperipheral area TPA as shown in FIG. 39 , and thus may be electricallyconnected to the second sensor detector 332 as shown in FIG. 40 .

As shown in FIG. 39 , the proximity sensor electrodes PE are formedinstead of the dummy patterns DE for reducing parasitic capacitancebetween the second electrode of the emission material layer EML and thedriving electrode TE or the sensing electrode RE. In this manner, theproximity sensor electrodes PE may be formed or disposed in the sensorarea TSA without any additional process.

FIG. 40 is a view showing an example of a sensor driver connected tosensor electrodes and a radio frequency driver connected to a firstconductive pattern.

An embodiment of FIG. 40 may be different from an embodiment of FIG. 18in that a sensor driver 330 may include a second sensor detector 334 anda second analog-to-digital converter 335.

Referring to FIG. 40 , the second sensor detector 334 detects a voltagecharged in a second mutual capacitance Cm2 through the proximity sensingline PL connected to the proximity sensing electrodes PE. As shown inFIG. 40 , the second mutual capacitance Cm2 may be formed or disposedbetween the driving electrode TE and the sensing electrode RE.

The second sensor detector 334 may include a second operationalamplifier OA2, a second feedback capacitor Cfb2, and a second resetswitch RSW2. The second operational amplifier OA2 the second feedbackcapacitor Cfb2 and the second reset switch RSW2 of the second sensordetector 334 may be substantially identical to the first operationalamplifier OA1, the first feedback capacitor Cfb1 and the first resetswitch RSW1 of the first sensor detector 332, respectively. The secondstorage capacitor Cs2 is connected between the output terminal (out) ofthe second operational amplifier OA2 and the ground to store the outputvoltage Vout2 of the second operational amplifier OA2.

The second analog-to-digital converter 335 may convert the outputvoltage stored in the second storage capacitor Cs2 into second digitaldata and output the second digital data.

As shown in FIG. 40 , the sensor electrode layer SENL may determinewhether there is an object approaching the sensor electrode layer SENLby sensing the voltages charged in the second mutual capacitances Cm2.

FIG. 41 is an enlarged plan view showing first conductive patterns andsensor electrodes of FIG. 39 . For convenience of illustration, FIG. 41shows only two sensing electrodes RE adjacent to each other in the firstdirection (x-axis direction) and two driving electrodes TE adjacent toeach other in the second direction (y-axis direction). However, thedisclosure is not limited thereto.

An embodiment of FIG. 41 may be different from an embodiment of FIG. 30in that a proximity sensor electrode PE may be surrounded by a sensingelectrode RE, and that a fifth connection unit BE5 for electricallyconnecting between proximity sensor electrodes PE adjacent to oneanother in the first direction (x-axis direction) and a sixth connectionunit BE6 for electrically connecting between the proximity sensorelectrodes PE in the second direction (y-axis direction) may be formedor disposed.

Although each of the proximity sensor electrodes PE in FIG. 41 has asubstantially square shape when viewed from the top, the disclosure isnot limited thereto. The proximity sensor electrodes PE, the fifthconnection unit BE5 and the sixth connection unit BE6 may be formed ordisposed in a substantially mesh topology when viewed from the top.

The proximity sensor electrodes PE may be surrounded by the drivingelectrodes TE, respectively. The driving electrodes TE, the sensingelectrodes RE, the first conductive patterns AP and the proximitysensing electrodes PE may be electrically separated from each other. Thedriving electrodes TE, the sensing electrodes RE, the dummy patterns DE,the first conductive patterns AP and the proximity sensor electrodes PEmay be spaced apart from one another.

The proximity sensor electrodes PE adjacent to one another in the firstdirection (x-axis direction) may be electrically connected through thefifth connection unit BE5. The proximity sensor electrodes PE and thefifth connection unit BE5 may be disposed on the first sensor insulatinglayer TINS1 as shown in FIG. 42 . The proximity sensor electrodes PE andthe fifth connection unit BE5 may be disposed on a same layer as thedriving electrodes TE, the sensing electrodes RE and the firstconductive patterns AP. The fifth connection unit BE5 may beelectrically separated from the driving electrodes TE, the sensingelectrodes RE, and the first conductive patterns AP. The fifthconnection unit BE5 may be spaced apart from the driving electrodes TE,the sensing electrodes RE, and the first conductive patterns AP.

The proximity sensor electrodes PE adjacent to one another in the seconddirection (y-axis direction) may be electrically connected through thesixth connection units BE6. The sixth connection unit BE6 may include afirst sub connection unit BE61 and a second sub connection unit BE62 inorder to be electrically separated from the sensing electrodes RE, thedriving electrodes TE and the first conductive patterns AP.

The first sub connection unit BE31 may be disposed on a same layer asthe driving electrodes TE, the sensing electrodes RE, and the firstconductive patterns AP. The first sub connection unit BE61 may beelectrically separated from the driving electrodes TE, the sensingelectrodes RE, and the first conductive patterns AP. The first subconnection unit BE31 may be spaced apart from the driving electrodes TE,the sensing electrodes RE, and the first conductive patterns AP.

The second sub connection unit BE32 may be formed or disposed on adifferent layer from the driving electrodes TE, the sensing electrodesRE and the first conductive patterns AP, and may be electricallyconnected to the first sub connection unit BE61 through a fourth contactholes CNT4. For example, the first sub connection unit BE61 may bedisposed on the first sensor insulating layer TINS1 shown in FIG. 42 ,and the second sub connection unit BE62 may be disposed on the secondbuffer layer BF2 shown in FIG. 42 . The second sub connection unit BE62may overlap the driving electrode TE, the sensing electrode RE, and thefirst sub connection unit BE31 of the third connection unit BE3 in thethird direction (z-axis direction).

The second sub connection unit BE62 may be bent at least once. In FIG.41 , the second sub connection unit BE62 is bent in the shape of anglebrackets, for example, “<” or “>”, but the shape of the secondconnection unit BE62 is not limited thereto.

As shown in FIG. 41 , the proximity sensor electrodes PE adjacent to oneanother in the first direction (x-axis direction) may be electricallyconnected through the fifth connection units BE5, and the proximitysensor electrodes PE adjacent to one another in the second direction(y-axis direction) may be electrically connected through the sixthconnection units BE6, so that the proximity sensor electrodes PE may beelectrically separated from the driving electrodes TE and the sensingelectrodes RE.

FIG. 43 is an enlarged plan view showing the sensor electrodes, a straingauge, and a first conductive pattern of FIG. 37 in detail. FIG. 44 is acircuit diagram showing a third sensor detector of FIG. 43 in detail.

An embodiment shown in FIGS. 43 and 44 may be different from anembodiment of FIG. 40 in that proximity sensor electrodes PE may beforce sensor electrodes PRE for pressure sensing instead of proximitysensing, and that the force sensor electrodes PRE may be electricallyconnected to the third sensor detector 336 including a Wheatstone bridgecircuit WB.

Referring to FIGS. 43 and 44 , the force sensor electrodes PRE may beelectrically connected together and may serve as a strain gauge. Thethird sensor detector 336 may include a Wheatstone bridge circuit WB.The third sensor detector 336 may include an analog-to-digital converterand a processor for detecting a first voltage Va output from theWheatstone bridge circuit WB.

The Wheatstone bridge circuit WB includes a first node N1, a second nodeN2, a first output node N3, and a second output node N4. The drivingvoltage Vs may be applied to the first node N1, and the second node N2may be connected to the ground GND.

The Wheatstone bridge circuit WB may include a first resistor WBaconnected to the second node N2 and the second output node N4, a secondresistor WBb connected to the first node N1 and the second output nodeN4, and a third resistor WBc connected to the second node N2 and firstoutput node N3.

The resistance R1 of the first resistor WBa, the resistance R2 of thesecond resistor WBb, and the resistance R3 of the third resistor WBc mayeach have a predetermined value. In other words, the first resistor WBato the third resistor WBc may be fixed resistors.

The Wheatstone bridge circuit WB may include an amplifier circuit OPA3,such as an operational amplifier. The amplifier circuit OPA3 may includean inverting input terminal, a non-inverting input terminal, and anoutput terminal. An electrical flow between the first output node N3 andthe second output node N4 may be detected through the amplifier circuitOPA3. In other words, the amplifier circuit OPA3 may operate as acurrent or voltage measuring element.

One of the first output node N3 and the second output node N4 may beelectrically connected to one of the input terminals of the amplifiercircuit OPA3, and the other one of the first output node N3 and thesecond output node N4 may be electrically connected to the other inputterminal of the amplifier circuit OPA3. For example, the first outputnode N3 may be connected to the inverting input terminal of theamplifier circuit OPA3, and the second output node N4 may be connectedto the non-inverting input terminal of the amplifier circuit OPA3.

The output terminal of the amplifier circuit OPA3 may output a firstvoltage Va proportional to the difference between the voltages input tothe two input terminals.

One end of the strain gauge SG formed by the force sensor electrodes PREmay be electrically connected to the first node N1, and the other end ofthe strain gauge SG formed by the force sensor electrodes PRE may beconnected to the first node N3.

According to an embodiment, the strain gauge SG, the first resistor WBa,the second resistor WBb and the third resistor WBc may be electricallyconnected with each other to implement the Wheatstone bridge circuit WB.

When no pressure is applied, the product of the resistance Ra of thestrain gauge SG and the resistance R1 of the first resistance WBa may besubstantially equal to the product of the resistance R2 of the secondresistance WBb and the third resistance R3 of the third resistor WBc.When the product of the resistance Ra of the first force sensorelectrode PE1 and the resistance R1 of the first resistor WBa is equalto the product of the resistance R2 of the second resistance WBb and thethird resistance R3 of the third resistor WBc, the voltage of the firstoutput node N3 may be equal to the voltage of the second output node N4.When the voltage of the first output node N3 is equal to the voltage ofthe second output node N4, the voltage difference between the firstoutput node N3 and the second output node N4 may be 0V, and the firstvoltage Va output by the amplifier circuit OPA3 may be 0V.

When a pressure of is applied to the sensor area PSA by a user, theforce sensor electrode PRE may be deformed depending on the strength ofthe pressure, and the resistance Ra of the strain gauge SG may bechanged by the deformation. Therefore, a voltage difference is madebetween the first output node N3 and the second output node N4. When avoltage difference is made between the first output node N3 and thesecond output node N4, the amplifier circuit OPA outputs a value otherthan 0V as the first voltage Va. Therefore, it is possible to detect thepressure of the user's touch based on to the first voltage Va outputfrom the amplifier circuit OPA.

FIG. 45 is an enlarged plan view showing the sensor electrodes, forcesensor electrodes and the first conductive pattern of FIG. 39 in detail.For convenience of illustration, FIG. 45 shows only two sensingelectrodes RE adjacent to each other in the first direction (x-axisdirection) and two driving electrodes TE adjacent to each other in thesecond direction (y-axis direction). However, the disclosure is notlimited thereto.

An embodiment of FIG. 45 may be different from an embodiment of FIG. 41in that force sensor electrodes PRE may be formed or disposed instead ofproximity sensor electrodes PE.

Referring to FIG. 45 , for the force sensor electrodes PRE to work asthe strain gauge SG, each of the force sensor electrodes PRE may have asubstantially serpentine shape including bending portions. For example,in FIG. 45 , each of the force sensor electrodes PRE is extended in afirst direction and then is bent in the direction perpendicular to thefirst direction, and is extended in the direction opposite to the firstdirection and then is bent in the direction perpendicular to the firstdirection. It is, however, to be understood that the disclosure is notlimited thereto.

As shown in FIG. 45 , each of the force sensor electrodes PRE has thesubstantially serpentine shape including bent portions, and thus theshape of the force sensor electrodes PRE may be changed according to theuser's touch pressure. As a result, the resistance of the force sensorelectrodes PRE changes, so that it is possible to determine whetherthere is a user's touch pressure.

FIG. 46 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

In the example shown in FIG. 46 , the sensor electrodes TE and RE of thesensor electrode layer SENL include two kinds of electrodes, e.g., thedriving electrodes TE and the sensing electrodes RE, and the mutualcapacitive sensing is carried out by using one layer, i.e., drivingsignals are applied to the driving electrodes TE and then the voltagescharged at the mutual capacitances may be sensed through the sensingelectrodes RE.

For convenience of illustration, FIG. 46 shows only the sensorelectrodes TE and RE, the dummy patterns DE, the first conductivepatterns AP, the sensor lines TL and RL, the feeding lines FDL, thesensor pads TP1 and TP2, and the ground lines GRL1 and GRL2. However,the disclosure is not limited thereto.

Referring to FIG. 46 , the driving electrodes TE may be arranged ordisposed in the odd columns in the second direction (y-axis direction),and the sensing electrodes RE may be disposed in the even columns in thesecond direction (y-axis direction). The driving electrodes TE may beelectrically separated from the sensing electrodes RE. The drivingelectrodes TE may be spaced apart from the sensing electrodes RE.

At least one sensing electrode RE may be disposed between a drivingelectrode TE disposed in an odd column and a driving electrode TEdisposed in another odd column. At least one driving electrode TE may bedisposed between a sensing electrode RE disposed in an even column and asensing electrode RE disposed in another even column.

Each of the sensing electrodes RE may be connected to at least onesensing line RL. The sensing electrodes RE arranged or disposed in theodd rows may be commonly connected to the sensing line RL disposed onone side thereof, while the sensing electrodes RE arranged or disposedin the even rows may be commonly connected to the sensing line RLdisposed on the other side thereof.

Each of the driving electrodes TE may be connected to at least onedriving line TL. Each of the driving electrodes TE arranged or disposedin the odd rows may be connected to the driving line TL disposed on oneside thereof, while each of the driving electrodes TE arranged ordisposed in the even rows may be connected to the driving line TLdisposed on the other side thereof.

The length of the driving electrodes TE may be larger than that of thesensing electrodes RE in the second direction (y-axis direction). Forexample, as shown in FIG. 46 , the length of the driving electrodes TEmay be approximately or about twice the length of the sensing electrodesRE in the second direction (y-axis direction).

One driving electrode TE may overlap the sensing electrodes RE adjacentto the driving electrode TE in the first direction (x-axis direction).For example, as shown in FIG. 46 , a driving electrode TE may overlaptwo sensing electrodes RE adjacent to the driving electrode TE in thefirst direction (x-axis direction). The mutual capacitance may be formedor disposed between the driving electrode TE and each of the sensingelectrodes RE adjacent to the driving electrode TE in the firstdirection (x-axis direction). The dummy patterns DE may be electricallyseparated from the driving electrodes TE and the sensing electrodes RE.The driving electrodes TE, the sensing electrodes RE and the dummypatterns DE may be disposed apart from each other. Each of the dummypatterns DE may be electrically floated. The dummy patterns DE may besurrounded by the driving electrodes TE and the sensing electrodes RE,respectively.

The first conductive patterns AP may be electrically separated from thedriving electrodes TE and the sensing electrodes RE. The drivingelectrodes TE, the sensing electrodes RE and the first conductivepatterns AP may be spaced apart from each other. The first conductivepatterns AP may be surrounded by the driving electrodes TE,respectively. Alternatively, the first conductive patterns AP may besurrounded by the sensing electrodes RE, respectively. The firstconductive patterns AP adjacent to each other in the second direction(y-axis direction) may be connected to a single feeding line FDL.

The sensor lines TL and RL may be disposed in the sensor area TSA and inthe sensor peripheral area TPA. The sensor lines TL and RL may bedisposed in the sensor peripheral area TPA on one outer side of thesensor area TSA. The sensor lines TL and RL may include sensing lines RLconnected to the sensing electrodes RE and driving lines TL connected tothe driving electrodes TE.

The feeding line FDL may be connected to the first conductive patternsAP. The feeding line FDL may be disposed on one side of the drivingelectrodes TE arranged or disposed in a column. Each of the feedinglines FDL may be connected to one of the first sensor pads TP1 and thesecond sensor pads TP2. Since the first sensor pads TP1 and the secondsensor pads TP2 are connected to the display circuit board 310 throughan anisotropic conductive film, the first conductive patterns AP may beelectrically connected to the radio frequency driver 350 disposed on thedisplay circuit board 310. The first conductive pattern AP may beutilized as an antenna for near field communications such as an antennafor an RFID tag, or may be utilized as a patch antenna for mobilecommunications.

Ground voltage may be applied to the first ground line GRL1 and thesecond ground line GRL2. The first ground line GRL1 may be disposed inthe sensor peripheral area TPA on the left outer side of the sensor areaTSA. The second ground line GRL2 may be disposed in the sensorperipheral area TPA on the right outer side and in the sensor peripheralarea TPA on the upper outer side of the sensor area TSA.

FIG. 47 is an enlarged plan view showing the sensor electrode and thefirst conductive pattern of FIG. 46 . FIG. 47 shows only the drivingelectrode TE surrounding the first conductive pattern AP for convenienceof illustration. However, the disclosure is not limited thereto.

Referring to FIG. 47 , the driving electrode TE, the first conductivepattern AP, a guard pattern GAP, the feeding line FDL, and the drivingline TL may be formed in a mesh when viewed from the top.

The driving electrode TE may be formed in the shape of a substantiallyrectangular window frame with an empty center. The driving electrode TEmay include an empty space at its center. The first conductive patternAP may be disposed in the empty space of the driving electrode TE. Thefirst conductive pattern AP may surround the driving electrode TE.Although the first conductive pattern AP may have a substantiallyrectangular shape when viewed from the top in FIG. 47 , the shape of thefirst conductive pattern AP is not limited thereto. The drivingelectrode TE may include an open area OA connecting the empty space withthe outside on one side of the driving electrode TE. Therefore, thefeeding line FDL may be connected to the first conductive pattern APthrough the open area OA of the driving electrode TE. Therefore, thedriving electrode TE may be spaced apart from and electrically insulatedfrom the first conductive pattern AP.

The guard pattern GAP may be formed or disposed between the firstconductive pattern AP and the driving electrode TE. The guard patternGAP may be electrically floated or may be connected to at least one ofthe ground lines GRL1 to GRL3 in the sensor peripheral area TPA toreceive a ground voltage. As the guard pattern GAP is disposed betweenthe driving electrode TE and the first conductive pattern AP, it ispossible to block the driving electrode TE from being affected byelectromagnetic waves from the first conductive pattern AP.

Although the feeding line FDL is disposed on one side of the drivingelectrode TE and the driving line TL is disposed on the other side ofthe driving electrode TE in the example shown in FIG. 47 , thedisclosure is not limited thereto. Both the feeding line FDL and thedriving line TL may be disposed on one side of the drive electrode TE.

FIG. 48 is a schematic cross-sectional view taken along line VIII-VIII′of FIG. 47 .

Referring to FIG. 48 , the driving electrode TE, the guard pattern GAPand the first conductive pattern AP may be disposed on the second bufferlayer BF2. For example, the first conductive pattern AP may be made ofthe same or similar material on a same layer as the driving electrode TEand the guard pattern GAP. The first conductive pattern AP may be madeof the same or similar material on a same layer as the sensing electrodeRE, the dummy pattern DE, the driving line TL, the sensing line RL, andthe feeding line FDL. Therefore, the first conductive pattern AP and theguard pattern GAP may be formed without any additional process.

The driving electrode TE, the sensing electrode RE, the dummy patternDE, the driving line TL, the sensing line RL, the feeding line FDL, theguard pattern GAP and first conductive pattern AP may be disposed tooverlap the bank 180 in the third direction (z-axis direction).Therefore, it is possible to avoid that the luminance of the lightoutput from the sub-pixels PX is reduced as the light is hidden by thedriving electrode TE, the sensing electrode RE, the dummy pattern DE,the driving line TL, the sensing line RL, the feeding line FDL, theguard pattern GAP and the first conductive pattern AP.

As shown in FIG. 48 , the first conductive pattern AP and the guardpattern GAP are disposed on the first sensor insulating layer TINS1 andthe second conductive pattern GP is disposed on the second buffer layerBF2, and thus the first conductive pattern may be formed without anyadditional process.

FIG. 49 is a schematic cross-sectional view taken along line VIII-VIII′of FIG. 47 .

An embodiment of FIG. 49 may be different from an embodiment of FIG. 48in that a second conductive pattern GP overlapping a first conductivepattern AP may be disposed on a second buffer layer BF2 in the thirddirection (z-axis direction), and that a first conductive pattern AP maybe disposed on a first sensor insulating layer TINS1.

Referring to FIG. 49 , the driving electrode TE, the guard pattern GAPand the second conductive pattern GP may be disposed on the secondbuffer layer BF2. For example, the second conductive pattern GP may bemade of the same or similar material on a same layer as the drivingelectrode TE and the guard pattern GAP. The second conductive pattern GPmay be made of the same or similar material on a same layer as thesensing electrode RE, the dummy pattern DE, the driving line TL, thesensing line RL, and the feeding line FDL.

FIG. 50 is a schematic cross-sectional view taken along line VIII-VIII′of FIG. 47 .

An embodiment of FIG. 50 may be different from an embodiment of FIG. 49in that each of guard patterns GAP may include a first sub guard patternSGAP1 and a second sub guard pattern SGAP2.

Referring to FIG. 50 , the first sub guard pattern SGAP1 may be disposedon a second buffer layer BF2. The first sub guard pattern SGAP1 may bemade of the same or similar material on a same layer as the drivingelectrode TE. The first sub guard pattern SGAP1 may be made of the sameor similar material on a same layer as the driving electrode RE, thedummy pattern DE, the driving line TL, the sensing line RL, the feedingline FDL and the second conductive pattern GP.

The second sub guard pattern SGAP2 may be disposed on the first sensorinsulating layer TINS1. The second sub guard pattern SGAP2 may be madeof the same or similar material on a same layer as the first conductivepattern AP.

As shown in FIG. 50 , when the guard pattern GAP is made up of the twolayers of the first sub guard pattern SGAP1 and the second sub guardpattern SGAP2, it may be possible to more effectively block theinfluence on the driving electrode TE by electromagnetic waves from thefirst conductive pattern AP.

FIG. 51 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

In the example shown in FIG. 51 , the sensor electrodes TE and RE of thesensor electrode layer SENL include two kinds of electrodes, e.g., thedriving electrodes TE and the sensing electrodes RE, and the mutualcapacitive sensing is carried out by using one layer, i.e., drivingsignals are applied to the driving electrodes TE and then changes in themutual capacitances may be sensed through the sensing electrodes RE.

An embodiment of FIG. 51 may be different from an embodiment of FIG. 46in that the length of the driving electrode TE may be substantiallyequal to the length of the sensing electrode RE in the second direction(y-axis direction).

Referring to FIG. 51 , one driving electrode TE may overlap sensingelectrodes RE adjacent to the driving electrode TE in the firstdirection (x-axis direction). Because the length of the drivingelectrode TE is substantially equal to the length of the sensingelectrode RE in the second direction (y-axis direction), one drivingelectrode TE may overlap the half of one sensing electrode RE. Themutual capacitance may be formed or disposed between the drivingelectrode TE and each of the sensing electrodes RE adjacent to thedriving electrode TE in the first direction (x-axis direction).

FIG. 52 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

In the example shown in FIG. 52 , the sensor electrodes SE of the sensorelectrode layer SENL include one kind of electrodes, and the selfcapacitive sensing is carried out by using one layer, i.e., drivingsignals are applied to the sensor electrode SE and then the voltagecharged in the self-capacitance of the sensor electrode SE is sensed

For convenience of illustration, FIG. 52 shows only the sensorelectrodes SE, the dummy patterns DE, the first conductive patterns AP,the dummy patterns DE, the sensor lines SEL, and the feeding lines FDL,the sensor pads TP1 and TP2, and the ground lines GRL1 to GRL2. However,the disclosure is not limited thereto.

Referring to FIG. 52 , the sensor electrodes SE may be electricallyseparated from one another. The sensor electrodes SE may be spaced apartfrom one another. Each of the sensor electrodes SE may be connected tothe sensor line SEL. Although each of the sensor electrodes SE may beformed in a substantially square shape when viewed from the top in FIG.52 , the disclosure is not limited thereto. Each of the sensorelectrodes SE may surround one of the dummy pattern DE and the firstconductive pattern AP.

The dummy patterns DE may be surrounded by the sensor electrodes SE,respectively. The sensor electrodes SE may be electrically separatedfrom the dummy patterns DE. The sensor electrodes SE may be spaced apartfrom the dummy patterns DE. Each of the dummy patterns DE may beelectrically floated.

The first conductive patterns AP may be electrically separated from thesensor electrodes SE. The sensor electrodes SE may be spaced apart fromthe first conductive patterns AP. The first conductive patterns AP maybe surrounded by the sensor electrodes SE, respectively. The firstconductive patterns AP adjacent to each other in the second direction(y-axis direction) may be connected to a single feeding line FDL.

The sensor lines SEL and the feeding lines FDL may be disposed in thesensor area TSA and in the sensor peripheral area TPA. The sensor linesSEL and the feeding lines FDL may be disposed in the sensor peripheralarea TPA on one outer side of the sensor area TSA. Each of the sensorlines SEL may be connected to the sensor electrode SE, and each of thefeeding lines FDL may be connected to the first conductive patterns AP.Each of the sensor lines SEL may be disposed on one side of the sensorelectrode SE. Each of the feeding lines FDL may be disposed on the otherside of the sensor electrode SE.

The sensor electrodes SE, the dummy patterns DE, the first conductivepatterns AP, the sensor lines SL, and the feeding lines FDL may beformed in a mesh when viewed from the top.

Ground voltage may be applied to the first ground line GRL1 and thesecond ground line GRL2. The first ground line GRL1 may be disposed inthe sensor peripheral area TPA on the left outer side of the sensor areaTSA. The second ground line GRL2 may be disposed in the sensorperipheral area TPA on the right outer side and in the sensor peripheralarea TPA on the upper outer side of the sensor area TSA.

The connection between the sensor electrodes SE and the sensor lines SELand the connection between the first conductive patterns AP and thefeeding lines FDL may be substantially identical to the connectionbetween the driving electrodes TE and the driving lines TL and theconnection between the first conductive pattern AP and the feeding lineFDL shown in FIG. 47 . The schematic cross-sectional structures of thesensor electrodes SE and the first conductive patterns AP may besubstantially identical to the schematic cross-sectional structures ofthe driving electrodes TE and the first conductive patterns AP shown inFIGS. 48 to 50 . A guard pattern GAP may be disposed between the sensorelectrode SE and the first conductive pattern AP as shown in FIGS. 48 to50 .

FIG. 53 is a view showing an example of the sensor driver connected tothe sensor electrodes of FIG. 52 . In FIG. 53 , the sensor driver 330 isconnected to one sensor electrode SE for convenience of illustration.

Referring to FIG. 53 , the sensor driver 330 may include a drivingsignal output 331, a first sensor detector 332, and a firstanalog-to-digital converter 333.

The driving signal output 331 may output a touch driving signal TD tothe sensor electrodes SE through the sensor line SEL. The touch drivingsignal TD may include pulses. The driving signal output 331 may outputthe touch driving signal TD to the sensor lines SEL in a predeterminedorder.

The first sensor detector 332 detects a voltage charged in aself-capacitance Cs through the sensor line SEL electrically connectedto the sensing electrodes RE. As shown in FIG. 53 , the self-capacitanceCs may be formed or disposed between the sensor electrode SE and anotherelectrode overlapping the sensor electrode SE.

The first sensor detector 332 may include a first operational amplifierOA1, a first feedback capacitor Cfb1, and a first reset switch RSW1. Thefirst operational amplifier OA1, the first feedback capacitor Cfb1 andthe first reset switch RSW1 of the first sensor detector 332 may besubstantially identical to those described above with reference to FIG.16 . The first storage capacitor Cs1 is connected between the outputterminal (out) of the first operational amplifier OA1 and the ground tostore the output voltage Vout1 of the first operational amplifier OA1.

The first analog-to-digital converter 333 may convert the output voltageVout1 stored in the first storage capacitor Cs1 into first digital dataand output the first digital data.

According to an embodiment shown in FIG. 53 , for the self-capacitancesensing, the self-capacitance Cs of the sensor electrode SE may becharged with the touch driving signal TD, and then the voltage chargedin the self-capacitance Cs may be sensed, so that it may be possible todetermine whether a user's touch has been applied.

FIG. 54 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

In FIG. 54 , the sensor electrode of the sensor electrode layer SENL maybe a force sensor electrode PRE working as a strain gauge SG.

For convenience of illustration, FIG. 54 shows only force sensorelectrodes PRE, pressure sensing lines PRL, first conductive patternsAP, first feeding lines FDL1, second pad lines FL2 and sensor pads TP1and TP2. However, the disclosure is not limited thereto.

Referring to FIG. 54 , a display panel 300 may be a foldable displaypanel that may be folded over a folding line FOL. Although FIG. 54 showsonly one folding line FOL, the disclosure is not limited thereto. Forexample, the display panel 300 may be folded over several folding linesFOLs.

The force sensor electrodes PRE may include the strain gauge SG. Thestrain gauge SG may have a substantially serpentine shape includingbending portions. For example, in FIG. 54 , each of the force sensorelectrodes PRE is extended in the first direction (x-axis direction) tothen be bent in the second direction (y-axis direction), and is extendedin the opposite direction of the first direction (x-axis direction) tothen be bent in the second direction (y-axis direction). It is, however,to be understood that the disclosure is not limited thereto.

The force sensor electrodes PRE may be disposed in the sensor area TSA.Some of the force sensor electrodes PRE may be arranged or disposedalong the folding line FOL. When the display panel 300 is folded alongthe folding line FOL, the shape of the strain gauge SG of each of someof the force sensor electrodes PRE may be deformed. Therefore, it ispossible to determine whether the display panel 300 is folded or notbased on a change in the resistance of the strain gauge SG of each ofsome force sensor electrodes PRE.

The other force sensor electrodes PRE may not overlap the folding lineFOL. According to the pressure of the user's touch, the shape of thestrain gauge SG of each of the other force sensor electrodes PRE may bechanged. Therefore, it is possible to determine whether there is auser's touch pressure based on a change in the resistance of the straingauge SG of each of the other force sensor electrodes PRE.

The strain gauge SG of each of the force sensor electrodes PRE may beconnected to the pressure sensing lines PRL. One side of the straingauge SG of each of the force sensor electrodes PRE may be connected toone pressure sensing line PRL, and the other side thereof may beconnected to another pressure sensing line PRL. The pressure sensinglines PRL may be connected to the sensor pads TP1 and TP2, and thus maybe electrically connected to the sensor driver 330. The sensor driver330 may include a third sensor detector 336 as shown in FIG. 44 , andthe third sensor detector 336 may be substantially identical to that ofFIG. 44 .

When the first conductive pattern AP is disposed in the sensorperipheral area TPA, it may be disposed in the sensor peripheral area onat least three outer sides of the sensor area TSA. The first conductivepattern AP may be disposed to surround at least three sides of thesensor area TSA. For example, the first conductive pattern AP may bedisposed to surround the upper side, the left side, and the right sideof the sensor area TSA. The first conductive pattern AP may be connectedto the conductive pads CP on the lower side of the sensor area TSA.

When the first conductive pattern AP is disposed in the sensor area TSA,it may be disposed so as not to overlap the force sensor electrodes PRE.The first conductive pattern AP may be connected to the feeding lines FLdisposed in the sensor peripheral area TPA, and the feeding lines FL maybe connected to the conductive pads CP. One end of the first conductivepattern AP may be connected to a feeding line FL disposed on the leftouter side of the sensor area TSA, while the other end of the firstconductive pattern AP may be connected to a feel line FL disposed on theright outer side of the sensor area TSA.

The conductive pads CP may be electrically connected to the displaycircuit board 310 via an anisotropic conductive film. Therefore, theconductive patterns AP may be electrically connected to the radiofrequency driver 350 disposed on the display circuit board 310.

Although the first conductive pattern AP is formed in a substantiallyloop or a substantially coil shape in FIG. 54 , the disclosure is notlimited thereto. The first conductive pattern AP may be formed as arectangular patch.

The first conductive patterns AP and the feeding lines FDL may bedisposed on a same layer as the force sensor electrodes PRE and thepressure sensing lines PRL. Therefore, the first conductive patterns APand the feeding lines FDL may be formed or disposed without anyadditional process.

FIG. 55 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment. FIG. 56 is an enlarged plan viewshowing the sensor electrodes and the connection units of FIG. 55 . FIG.57 is a schematic cross-sectional view taken along line IX-IX′ of FIG.56 .

An embodiment of FIGS. 55 to 57 may be different from an embodiment ofFIG. 17 in that sensor electrodes TE and RE of a sensor electrode layerSENL may be transparent electrodes.

Referring to FIGS. 55 to 57 , driving electrodes TE, sensing electrodesRE and island electrodes TEI may be made of a transparent metal oxideTCO, such as ITO and IZO, which may transmit light. Accordingly, eventhough the driving electrodes TE, the sensing electrodes RE and theisland electrodes TEI overlap sub-pixels, the aperture ratio of thesub-pixel does not decrease.

In order to prevent the moiré phenomenon possibly caused by the drivingelectrodes TE and the sensing electrodes RE when a user watches imageson the display panel 300, the driving electrodes TE and the sensingelectrodes may have zigzag sides when viewed from the top as shown inFIG. 55 . The zigzag pattern of a side of the driving electrode TE mayconform to the zigzag pattern of a side of the sensing electrode REadjacent to the side of the driving electrode TE.

Each of the connection units CE7 may electrically connect the drivingelectrode TE with the island electrode TEL One end of each of theconnection units CE7 may be electrically connected to the drivingelectrode TE, and the other end thereof may be electrically connected tothe island electrode TEL The island electrode TEI may be surrounded bythe sensing electrode RE.

As shown in FIG. 58 , a second substrate SUB2 may be added between thedisplay layer DISL and the sensor electrode layer SENL of the displaypanel 300. For example, the sensor electrode layer SENL may be disposedon the second substrate SUB2. In this instance, the connection units CE7may be disposed on the second substrate SUB2 as shown in FIG. 57 . Theconnection units CE7 may be made up of, but not limited to, a stackstructure of aluminum and titanium (Ti/Al/Ti), a stack structure ofaluminum and ITO (ITO/Al/ITO), an APC alloy and a stack structure of APCalloy and ITO (ITO/APC/ITO). The second substrate SUB2 may be made of aninsulating material such as glass, quartz and a polymer resin. Thesecond substrate SUB2 may be a rigid substrate or a flexible substratethat may be bent, folded, or rolled, within the spirit and the scope ofthe disclosure.

The first sensor insulating layer TINS1 may be formed or disposed on theconnection units CE7. The first sensor insulating layer TINS1 may beformed of an inorganic layer, for example, a silicon nitride layer, asilicon oxynitride layer, a silicon oxide layer, a titanium oxide layer,or an aluminum oxide layer.

The driving electrodes TE, the sensing electrodes RE and the islandelectrodes TEI may be formed or disposed on the first sensor insulatinglayer TINS1. Each of the driving electrodes TE may be electricallyconnected to the connection unit CE7 through a fifth contact hole CNT5that penetrates the first sensor insulating layer TINS1 and exposes theconnection unit CE7. Each of the island electrodes TEI may beelectrically connected to the connection unit CE7 through a fifthcontact hole CNT5 that penetrates through the first sensor insulatinglayer TINS1 and exposes the connection unit CE7. Accordingly, thedriving electrode TE may be electrically connected to the islandelectrode TEI via the seventh connection unit CE7. Accordingly, thedriving electrodes TE arranged or disposed in the second direction(y-axis direction) may be electrically connected to one another.

The first conductive patterns AP may be made of the same or similarmaterial on a same layer as the driving electrodes TE, the sensingelectrodes RE and the island electrodes TEL Each of the first conductivepatterns AP may be made of a transparent metal oxide (TCO) such as ITOand IZO, which may transmit light. Therefore, each of the firstconductive patterns AP may overlap the sub-pixel PX or the bank 180 inthe third direction (z-axis direction). The width of each of the firstconductive patterns AP may be 2 μm or less in order to prevent the firstconductive patterns AP from being recognized by the user.

As shown in FIGS. 55 to 57 , like the driving electrodes TE, the sensingelectrodes RE and the island electrodes TEI, the first conductivepatterns AP may be made of a transparent metal oxide TCI such as ITO andIZO, which may transmit light. Therefore, the first conductive patternsAP may be formed without any additional process.

FIG. 59 is a plan view showing a sensor electrode layer of a displaypanel according to an embodiment.

An embodiment of FIG. 59 may be different from an embodiment of FIG. 15in that a through hole TH may be formed or disposed in the sensor areaTSA, and that first conductive patterns AP may be formed or disposed ina wiring area LA around the through hole TH.

Referring to FIG. 59 , a through hole TH penetrating through the displaypanel 300 may be formed or disposed in the sensor area TSA. The drivingelectrode TE and the sensing electrode RE may not be formed in thethrough hole TH. The through hole TH is shown as a circle when viewedfrom the top, the disclosure is not limited thereto. The through hole THmay have a substantially oval or a substantially polygonal shape whenviewed from the top.

A dead space DS may surround the through hole TH. The driving electrodesTE and the sensing electrodes RE may not be formed or disposed in thedead space DS. The dead space DS may be formed in order to prevent thethrough hole TH from being formed so large by a processing error that itmay be formed or disposed beyond the wiring area LA and the sensor areaTSA during the process of forming the through hole TH. The dead space DSmay be formed in, but is not limited to, a substantially ring or annularshape when viewed from the top. For example, since the dead space DS maysurround the through hole TH, the shape of the dead space DS maysubstantially conform to the shape of the through hole TH when viewedfrom the top.

The wiring area LA may surround the dead space DS. The wiring area LAmay be formed or disposed in, but is not limited to, a substantiallyring or annular shape when viewed from the top. For example, since thewiring area LA may surround the dead space DS, the shape of the wiringarea LA may substantially conform to the shape of the through hole THand the dead space DS when viewed from the top.

The driving electrode TE and the sensing electrode RE may not be formedor disposed in the wiring area LA. In the wiring area LA, a drivingconnection unit electrically connecting between the driving electrodesTE disconnected by the through hole TH, and a sensing connection unitelectrically connecting between sensing connection lines forelectrically connecting between the sensing electrodes RE disconnectedby the through hole TH. The wiring area LA may overlap a light-blockinglayer of a cover window 100 in the third direction (z-axis direction).Therefore, the wiring area LA may be covered or overlapped by thelight-blocking layer of the cover window 100.

FIG. 60 is an enlarged plan view showing the through hole, the deadspace and the wiring area of FIG. 59 . FIG. 61 is an enlarged plan viewshowing a connection unit between a driving electrode and a drivingconnection line and a connection unit between a sensing electrode and asensing connection line of FIG. 60 . FIG. 62 is a schematiccross-sectional view taken along line X-X′ of FIG. 61 .

Referring to FIGS. 60 to 62 , the wiring area LA may include a drivingconnection unit TCL, a first sensing connection unit RCL1, a secondsensing connection unit RCL2, a first area compensating portion ES1, anda second area compensating portion ES2.

The driving connection unit TCL may electrically connect between thedriving electrodes TE disconnected by the through hole TH. The drivingconnection unit TCL may include a first driving connection unit TCL1 anda second driving connection unit TCL2.

The first driving connection unit TCL1 may be formed or disposed alongthe edge of the wiring area LA adjacent to the dead space DS. Forexample, as the wiring area LA is formed in a substantially ring orannular shape when viewed from the top, the first driving connectionunit TCL1 may be formed in a substantially circular shape when viewedfrom the top.

The second driving connection unit TCL2 may electrically connect thefirst driving connection unit TCL1 with the driving electrode TE. Oneside of the second driving connection unit TCL2 may be electricallyconnected to the first driving connection unit TCL1 through a sixthcontact hole CNT6 exposing the first driving connection unit TCL1, andthe other side of the second driving connection unit TCL2 may beelectrically connected to the driving electrode TE through the sixthcontact hole CNT6 exposing the driving electrode TE.

The first driving connection unit TCL1 may be made of the same orsimilar material on a same layer as the driving electrode TE. The seconddriving connection unit TCL2 may be made of the same or similar materialon a same layer as the first connection unit BEL The first drivingconnection unit TCL1 and the second driving connection unit TCL2 may bedisposed on different layers. For example, the first driving connectionunit TCL1 may be disposed on the first sensor insulating layer TINS1,and the second driving connection unit TCL2 may be disposed on thesecond buffer layer BF2.

The first sensing connection unit RCL1 may electrically connect thesensing electrodes TE disconnected by the through hole TH. The firstsensing connection unit RCL1 may be electrically separated from thedriving electrode TE, the first driving connection unit TCL1 and thesecond driving connection unit TCL2. The first sensing connection unitRCL1 may intersect the second driving connection unit TCL2. The firstsensing connection unit RCL1 may be made of the same or similar materialon a same layer as the sensing electrode RE.

The second sensing connection unit RCL2 may electrically connect othersensing electrodes TE disconnected by the through hole TH. The secondsensing connection unit RCL2 may be electrically separated from thedriving electrode TE, the first driving connection unit TCL1 and thesecond driving connection unit TCL2. The second sensing connection unitRCL2 may intersect the second driving connection unit TCL2. The secondsensing connection unit RCL2 may be made of the same or similar materialon a same layer as the sensing electrode RE.

Incidentally, because the area of the sensing electrode RE removed bythe through hole TH is greater than the area of the driving electrode TEremoved by the through hole TH, it is necessary to compensate for thearea of the sensing electrode RE removed by the through hole TH.Therefore, the width of the first sensing connection unit RCL1 and thewidth of the second sensing connection unit RCL2 may be larger than thewidth of the first driving connection unit TCL1 and the width of thesecond driving connection unit TCL2, respectively. For example, thefirst sensing connection unit RCL1 may be formed or disposed between thedriving electrode TE and the first driving connection unit TCL1.

The first area compensating portion ES1 may compensate for the area of asensing electrode RE removed by the through hole TH. The first areacompensating portion ES1 may be electrically separated from the drivingelectrode TE, the first driving connection unit TCL1 and the seconddriving connection unit TCL2. The first area compensating portion ES1may intersect the second driving connection unit TCL2. The first areacompensating portion ES1 may be made of the same or similar material ona same layer as the sensing electrode RE.

The second area compensating portion ES2 may compensate for the area ofanother sensing electrode RE removed by the through hole TH. The firstarea compensating portion ES1 may be adjacent to the second areacompensating portion ES2. The second area compensating portion ES2 maybe electrically separated from the driving electrode TE, the firstdriving connection unit TCL1 and the second driving connection unitTCL2. The second area compensating portion ES2 may intersect the seconddriving connection unit TCL2. The second area compensating portion ES2may be made of the same or similar material on a same layer as thesensing electrode RE.

The third area compensating portion ES3 may compensate for the area ofstill another sensing electrode RE removed by the through hole TH. Thethird area compensating portion ES3 may be electrically separated fromthe driving electrode TE, the first driving connection unit TCL1 and thesecond driving connection unit TCL2. The third area compensating portionES3 may intersect the second driving connection unit TCL2. The thirdarea compensating portion ES3 may be made of the same or similarmaterial on a same layer as the sensing electrode RE.

The fourth area compensating portion ES4 may compensate for the area ofanother sensing electrode RE removed by the through hole TH. The thirdarea compensating portion ES3 may be adjacent to the fourth areacompensating portion ES4. The fourth area compensating portion ES4 maybe electrically separated from the driving electrode TE, the firstdriving connection unit TCL1 and the second driving connection unitTCL2. The fourth area compensating portion ES4 may intersect the seconddriving connection unit TCL2. The fourth area compensating portion ES4may be made of the same or similar material on a same layer as thesensing electrode RE.

In the wiring area LA, the first conductive patterns AP may be disposedbetween the first sensing connection unit RCL1 and the first areacompensating portion ES1, between the first sensing connection unit RCL1and the third area compensating portion ES3, between the second sensingconnection unit RCL2 and the second area compensating portion ES2, andbetween the second sensing connection unit RCL2 and the fourth areacompensating portion ES4. The first conductive patterns AP may beelectrically connected by a single feeding line. Alternatively, thefirst conductive patterns AP may be electrically connected to differentfeeding lines.

Each of the first conductive patterns AP may be formed in asubstantially loop shape, a substantially coil shape, or as arectangular patch. When each of the first conductive patterns AP isformed in a substantially loop shape or a substantially coil shape, itmay be used as an antenna for an RFID tag for near field communications.When each of the first conductive patterns AP may be the quadrangularpatch as shown in FIG. 21 , it may be utilized as a patch antenna formobile communications.

As shown in FIG. 62 , the first conductive pattern AP may be made of thesame or similar material on a same layer as the sensing electrode RE.The first conductive pattern AP may be disposed on the first sensorinsulating layer TINS1.

The second conductive pattern GP overlapping the first conductivepattern AP may be made of the same or similar material on a same layeras the first connection unit CE1 and the second driving connection unitTCL2 as shown in FIG. 62 . The second conductive pattern GP may bedisposed on the second buffer layer BF2.

The first conductive pattern AP may be made of the same or similarmaterial on a same layer as the sensing electrode RE, and the secondconductive pattern GP is made of the same or similar material on a samelayer as the first connection unit CE1 and the second driving connectionunit TCL2, and thus the first conductive pattern AP and the secondconductive pattern GP may be formed without any additional process.

As shown in FIGS. 60 to 62 , the first conductive pattern AP formed ordisposed in the remaining portion of the wiring area LA surrounding thethrough hole TH may be utilized as the antenna.

FIG. 63 is a schematic cross-sectional view taken along line X-X′ ofFIG. 61 .

An embodiment of FIG. 63 may be different from an embodiment of FIG. 62in that a guard pattern GAP may be formed or disposed between a sensingelectrode RE and a first conductive pattern AP.

Referring to FIG. 63 , the guard pattern GAP may be spaced apart fromthe sensing electrode RE and the first conductive pattern AP. The guardpattern GAP may be electrically floating or may receive a groundvoltage.

As the guard pattern GAP is disposed between the sensing electrode REand the first conductive pattern AP as shown in FIG. 63 , it is possibleto block the influence on the sensing electrode RE by electromagneticwaves from the first conductive pattern AP.

FIG. 64 is a schematic cross-sectional view taken along line X-X′ ofFIG. 61 .

An embodiment of FIG. 64 may be different from an embodiment of FIG. 63in that each of guard patterns GAP may include a first sub guard patternSGAP1 and a second sub guard pattern SGAP2.

Referring to FIG. 64 , the first sub gaud pattern SGAP1 may be made ofthe same or similar material on a same layer as the first connectionunit BE1 and the second conductive pattern GP. The first sub guardpattern SGAP1 may be disposed on the second buffer layer BF2.

The second sub guard pattern SGAP2 may be made of the same or similarmaterial on a same layer as the sensing electrode RE and the firstconductive pattern AP. The second sub guard pattern SGAP2 may bedisposed on the first sensor insulating layer TINS1. The second subguard pattern SGAP2 may be electrically connected to the first sub guardpattern SGAP1 through a contact hole penetrating the first sensorinsulating layer TINS1.

As shown in FIG. 64 , when the guard pattern GAP is made up of the twolayers of the first sub guard pattern SGAP1 and the second sub guardpattern SGAP2, it is possible to more effectively block the influence ondriving electrodes TE and the sensing electrodes RE by electromagneticwaves from the first conductive pattern AP.

FIG. 65 is a plan view showing a display layer of a display panelaccording to an embodiment.

For convenience of illustration, FIG. 65 shows only pixels P, scan linesSL, data lines DL, scan control lines SCL, fan-out lines DLL, a scandriver 380, a display driver 320 and display pads DP of the display unitDU. However, the disclosure is not limited thereto.

Referring to FIG. 65 , the scan lines SL, the data lines DL and thepixels P are disposed in the display area DA. The scan lines SL may bearranged or disposed in the first direction (x-axis direction), whilethe data lines DL may be arranged or disposed in the second direction(y-axis direction) intersecting the first direction (x-axis direction).

Each of the sub-pixels PX may be electrically connected to at least oneof the scan lines SL and at least one of the data lines DL. Each of thesub-pixels PX may include thin-film transistors including a drivingtransistor and at least one switching transistor, a light-emittingelement, and a capacitor. When a scan signal is applied from a scan lineSL, each of the sub-pixels P receives a data voltage of a data line DLand supplies a driving current to the light-emitting element accordingto the data voltage applied to the gate electrode, so that light isemitted.

The scan driver 380 may be electrically connected to the display driver320 through scan control lines SCL. Accordingly, the scan driver 380 mayreceive the scan control signal from the display driver 320. The scandriver 380 generates scan signals according to a scan control signal andsupplies the scan signals to the scan lines SL.

Although the scan driver 380 may be formed or disposed in thenon-display area NDA on the left outer side of the display area DA inthe drawing, the disclosure is not limited thereto. For example, thescan driver 380 may be formed or disposed in the non-display area NDA onthe left outer side as well as in the non-display area NDA on the rightouter side of the display area DA.

The display driver 320 may be electrically connected to the display padsDP and receives digital video data and timing signals. The displaydriver 320 converts the digital video data into analog positive/negativedata voltages and supplies them to the data lines DL through the fan-outlines DLL. The display driver 320 generates and supplies scan controlsignals for controlling the scan driver 380 through the scan controlline SCL. The pixels P to which the data voltages are to be supplied areselected by the scan signals of the scan driver 380, and the datavoltages are supplied to the selected pixels P. The display driver 320may be an integrated circuit (IC) and may be attached to the substrateSUB by a chip on glass (COG) technique, a chip on plastic (COP)technique, or an ultrasonic bonding. It is, however, to be understoodthat the disclosure is not limited thereto. For example, the displaydriver 320 may be mounted on the display circuit board 310.

As shown in FIG. 65 , the display panel 300 may include display pads DPelectrically connected to the display driver 320 and sensor pads TP1 andTP2 electrically connected to the sensor lines. A display pad area DPAin which the display pads DP are disposed may be disposed between afirst sensor pad area TPA1 in which the first sensor pads TP1 aredisposed and a second sensor pad area TPA2 in which the second sensorpads TP2 are disposed. As shown in FIG. 65 , the display pad area DPAmay be disposed at the center of one end of the display panel 300, thefirst sensor pad area TPA1 may be disposed at the left side of the endof the display panel 300, and the second sensor pad area TPA2 may bedisposed on the right side of the end of the display panel 300.

FIG. 66 is a plan view showing an example of the pixels in the displayarea of FIG. 65 .

Referring to FIG. 66 , each of the pixels PXG may include a firstsub-pixel PX1, a second sub-pixel PX2 and a third sub-pixel PX3. Thefirst sub-pixel PX1 may emit a first light, the second sub-pixel PX2 mayemit a second light, and the third sub-pixel PX3 may emit a third light.The first light may be red light, the second light may be green light,and the third light may be blue light. It is, however, to be understoodthat the disclosure is not limited thereto. The sub-pixels PX1, PX2 andPX3 may emit light of the same color. Although the pixel PXG includesthe three sub-pixels in the example shown in FIG. 55 , the disclosure isnot limited thereto. Each of the sub-pixels PX1, PX2 and PX3 may includean emission area EMA and a non-emission area. The first sub-pixel PX1may include a first emission area EMA1, the second sub-pixel PX2 mayinclude a second emission area EMA2, and the third sub-pixel PX3 mayinclude a third emission area EMA3. The emission area EMA may be definedas a region in which a light-emitting element 175 is disposed to emitlight of a specific wavelength band. The emission area EMA may not becovered or overlapped by the first conductive pattern AP but may beexposed. The non-emission area may be defined as the other region thanthe emission area EMA. In the non-emission area, the light-emittingelement 175 is not disposed and the light emitted from thelight-emitting element 170 does not reach, and thus no light exitstherefrom.

Each of the sub-pixels PX1, PX2 and PX3 may include a first electrode171, a second electrode 173, a contact electrode 174, a light-emittingelement 175, a first conductive pattern AP, and a first connectionpattern CP1.

The first electrode 171 may be a pixel electrode disposed in each of thesub-pixels PX1, PX2 and PX3, while the second electrode 173 may be acommon electrode electrically connected across the sub-pixels PX1, PX2and PX3. Alternatively, the first electrode 171 may be an anodeelectrode of the light-emitting element 175, and the other may be acathode electrode of the light-emitting element 175.

The first electrode 171 and the second electrode 173 may includeelectrode stems 171S and 173S extended in the first direction (x-axisdirection), respectively, and one or more electrode branches 171B and173B branching off from the electrode stems 171S and 173S, respectively,and extended in the second direction (y-axis direction) intersecting thefirst direction D1 (x-axis direction).

The first electrode 171 may include the first electrode stem 171Sextended in the first direction (x-axis direction), and at least onefirst electrode branch 171B branching off from the first electrode stem171S and extended in the second direction (y-axis direction).

The first electrode stem 171S of a pixel may be electrically separatedfrom the first electrode stem 171S of another pixel adjacent to thepixel in the first direction (x-axis direction). The first electrodestem 171S of a pixel may be spaced apart from the first electrode stem171S of another pixel adjacent to the pixel in the first direction(x-axis direction). The first electrode stem 171S may be electricallyconnected to the thin-film transistor through a first electrode contacthole CNTD.

The first electrode branch 171B may be spaced apart from the secondelectrode stem 173S in the second direction (y-axis direction). Thefirst electrode branch 171B may be spaced apart from the secondelectrode stem 173S in the second direction (y-axis direction).

The second electrode 173 may include the second electrode stem 173Sextended in the first direction (x-axis direction), and a secondelectrode branch 173B branching off from the second electrode stem 173Sand extended in the second direction (y-axis direction).

The second electrode stem 173S of a pixel may be electrically connectedto the second electrode stem 173S of another pixel adjacent to the pixelin the first direction (x-axis direction). The second electrode stem173S may traverse the sub-pixels PX1, PX2 and PX3 in the first direction(x-axis direction).

The second electrode branch 173B may be spaced apart from the firstelectrode stem 171S in the second direction (y-axis direction). Thesecond electrode branch 173B may be spaced apart from the firstelectrode branch 171B in the first direction (x-axis axis direction).The second electrode branch 173B may be disposed between the firstelectrode branches 171B in the first direction (x-axis axis direction).

Although FIG. 66 shows that the first electrode branch 171B and thesecond electrode branch 173B are extended in the second direction(y-axis direction), but the disclosure is not limited thereto. Forexample, each of the first electrode branch 171B and the secondelectrode branch 173B may be partially curved or bent, and as shown inFIG. 67 , one electrode may surround the other electrode. In the exampleshown in FIG. 67 , the second electrode 173 may have a substantiallycircular shape, the first electrode 171 surrounds the second electrode173, a hole having a substantially ring or annular shape may be formedor disposed between the first electrode 171 and the second electrode173, and the second electrode 173 receives a cathode voltage through asecond electrode contact hole CNTS. The shapes of the first electrodebranch 171B and the second electrode branch 173B are not particularlylimed as long as the first electrode 171 and the second electrode 173are at least partially spaced apart from each other so that thelight-emitting elements 175 may be disposed in the space between thefirst electrode 171 and the second electrode 173.

The light-emitting elements 175 may be disposed between the firstelectrode line 171 and the second electrode line 173. One end of each ofthe light-emitting element 175 may be electrically connected to thefirst electrode 171, and the other end thereof may be electricallyconnected to the second electrode 173. The light-emitting elements 175may be spaced apart from each other. The light-emitting elements 175 maybe arranged or disposed substantially in parallel.

The light-emitting element 175 may have a shape of a rod, a line (line),a tube, a nanorod, within the spirit and the scope of the disclosure.For example, the light-emitting element 175 may be formed in asubstantially cylindrical shape or a substantially rod shape as shown inFIG. 68 . It is to be understood that the shape of the light-emittingelements 175 is not limited thereto. The light-emitting elements 175 mayhave a substantially polygonal column shape such as a cube, a cuboidand/or a hexagonal column, or a shape that may be extended in adirection with partially inclined outer surfaces. The length ‘h’ of thelight-emitting element 175 may be in a range of about 1 μm to about 10μm or in a range of about 2 μm to about 6 μm, and as an example,approximately or in a range of about 3 μm to about 5 μm. The diameter ofthe light-emitting element 175 may be in a range of about 300 nm toabout 700 nm, and the aspect ratio of the light-emitting element 175 maybe in a range of about 1.2 to about 100.

The light-emitting element 175 of the first sub-pixel PX1 may emit firstlight, the light-emitting element 175 of the second sub-pixel PX2 mayemit second light, and the light-emitting element 175 of the thirdsub-pixel PX3 may emit third light. The first light may be red lighthaving a center wavelength band in a range of 620 nm to 752 nm, thesecond light may be green light having a center wavelength band in arange of 495 nm to 570 nm, and the third light may be blue light havinga center wavelength band in a range of 450 nm to 495 nm. Alternatively,the light-emitting element 175 of the first sub-pixel PX1, thelight-emitting element 175 of the second sub-pixel PX2 and thelight-emitting element 175 of the third sub-pixel PX3 may emit light ofsubstantially the same color.

The contact electrode 174 may include a first contact electrode 174 aand a second contact electrode 174 b. The first contact electrode 174 aand the second contact electrode 174 b may have a shape extended in thesecond direction (y-axis direction).

The first contact electrode 174 a may be disposed on the first electrodebranch 171B and electrically connected to the first electrode branch171B. The first contact electrode 174 a may be in contact with one endof the light-emitting element 175. The first contact electrode 174 a maybe disposed between the first electrode branch 171B and thelight-emitting element 175. Accordingly, the light-emitting element 175may be electrically connected to the first electrode 171 through thefirst contact electrode 174 a.

The second contact electrode 174 b may be disposed on the secondelectrode branch 173B and electrically connected to the second electrodebranch 173B. The second contact electrode 174 b may be in contact withthe other end of the light-emitting element 175. The second contactelectrode 174 b may be disposed between the second electrode branch 173Band the light-emitting element 175. Accordingly, the light-emittingelement 175 may be electrically connected to the second electrode 173through the second contact electrode 174 b.

The width (or length in the first direction (x-axis direction)) of thefirst contact electrode 174 a may be greater than the width (or lengthin the first direction (x-axis direction)) of the first electrode branch171B, and the width (or length in the first direction (x-axisdirection)) of the second contact electrode 174 b may be greater thanthe width (or length in the first direction (x-axis direction)) of thesecond electrode branch 173B.

Outer banks 430 may be disposed between the sub-pixels PX1, PX2 and PX3.The outer banks 430 may be extended in the second direction (y-axisdirection). The length of each of the sub-pixels PX1, PX2 and PX3 in thefirst direction (x-axis direction) may be defined as the distancebetween the outer banks 430.

The first conductive pattern AP may be disposed to surround the emissionarea EMA in which the light-emitting elements 175 are disposed. Thefirst conductive pattern AP may not cover or overlap the light-emittingelements 175 but may expose them. The first conductive pattern AP maynot cover or overlap at least a part of the first contact electrode 174a and the second contact electrode 174 b but may expose it. The firstconductive pattern AP may overlap the first electrode branch 171B andthe second electrode branch 173B.

The first conductive patterns AP of the first sub-pixel PX1, the secondsub-pixel PX2 and the third sub-pixel PX3 may be electrically connectedwith one another as a single piece as shown in FIG. 66 . A single pixelPX may include a single first conductive pattern AP. The firstconductive pattern AP of a pixel PX may be electrically connected to thefirst conductive pattern AP of another pixel PX adjacent to the pixel PXin the first direction (x-axis direction) through the connection patternCP1. The first conductive pattern AP may be electrically connected tothe first connection pattern CP1 through a first connection contact holeCNTC1.

The first conductive pattern AP may be disposed on the outer bank 430between the first sub-pixel PX1 and the second sub-pixel PX2, and on theouter bank 430 between the second sub-pixel PX2 and the third sub-pixelPX3. The first conductive pattern AP is not disposed on the outer bank430 between the first sub-pixel PX1 and the third sub-pixel PX3. Thefirst connection pattern CP1 may be disposed on the outer bank 430between the first sub-pixel PX1 and the third sub-pixel PX3.

Although a single pixel PX includes a single first conductive pattern APin the example shown in FIG. 66 , but the disclosure is not limitedthereto. For example, pixels PX may include one first conductive patternAP. In this instance, the first conductive pattern AP may be disposed onthe outer bank 430 between the first sub-pixel PX1 and the thirdsub-pixel PX3. Alternatively, each of the sub-pixels PX1, PX2 and PX3may include a single first conductive pattern AP. The first conductivepattern AP is not disposed on the outer bank 430 between the firstsub-pixel PX1 and the second sub-pixel PX2, and on the outer bank 430between the second sub-pixel PX2 and the third sub-pixel PX3. The firstconnection pattern CP1 may be disposed on the outer bank 430 between thefirst sub-pixel PX1 and the second sub-pixel PX2, and on the outer bank430 between the second sub-pixel PX2 and the third sub-pixel PX3.

The first conductive pattern AP may be electrically connected to thefeeding line through the contact hole. Accordingly, the first conductivepattern AP may be electrically connected to the radio frequency driverdisposed on the display circuit board or the flexible film through thefeeding line. Therefore, the first conductive pattern AP may be utilizedas a patch antenna for mobile communication or an antenna for an RFIDtag for short range communication.

FIG. 68 is a perspective view showing one of the light-emitting elementsof FIG. 66 in detail.

Referring to FIG. 68 , the light-emitting element 175 may include afirst semiconductor layer 175 a, a second semiconductor layer 175 b, anactive layer 175 c, an electrode layer 175 d, and an insulating layer175 e.

The first semiconductor layer 175 a may be, e.g., an n-typesemiconductor having a first conductivity-type. The first semiconductorlayer 175 a may be one or more of n-type doped AlGaInN, GaN, AlGaN,InGaN, AlN and InN. For example, when the light-emitting element 175emits light of a blue wavelength band, the first semiconductor layer 175a may include a semiconductor material having Chemical Formula below:Al_(x)Ga_(y)In_(1-x-y)N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). The first semiconductorlayer 175 a may be doped with a first conductivity-type dopant such asSi, Ge and Sn. For example, the first semiconductor layer 175 a may ben-GaN doped with n-type Si.

The second semiconductor layer 175 b may be a second conductive-type,e.g., a p-type semiconductor. The second semiconductor layer 175 b maybe one or more of p-type doped AlGaInN, GaN, AlGaN, InGaN, AlN and InN.For example, when the light-emitting element 175 emits light of a blueor green wavelength band, the second semiconductor layer 175 b mayinclude a semiconductor material having Chemical Formula below:Al_(x)Ga_(y)In_(1-x-y)N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). The secondsemiconductor layer 175 b may be doped with a second conductivity-typedopant such as Mg, Zn, Ca, Se and Ba. According to an embodiment, thesecond semiconductor layer 175 b may be p-GaN doped with p-type Mg.

The active layer 175 c may be disposed between the first semiconductorlayer 175 a and the second semiconductor layer 175 b. The active layer175 c may include a material having a single or multiple quantum wellstructure. When the active layer 175 c includes a material having themultiple quantum well structure, quantum layers and well layers may bealternately stacked in the structure. Alternatively, the active layer175 c may have a structure in which a semiconductor material having alarge band gap energy and a semiconductor material having a small bandgap energy may be alternately stacked on one another, and may includeother Group III to Group V semiconductor materials depending on thewavelength range of the emitted light.

The active layer 175 c may emit light as electron-hole pairs arecombined therein in response to an electrical signal applied through thefirst semiconductor layer 175 a and the second semiconductor layer 175b. The light emitted from the active layer 175 c is not limited to lightin the blue wavelength band. The active layer 175 c may emit light inthe red or green wavelength band. For example, when the active layer 175emits light of the blue wavelength band, it may include a material suchas AlGaN and AlGaInN. In particular, when the active layer 175 c has amulti-quantum well structure in which quantum layers and well layers arealternately stacked on one another, the quantum layers may include AlGaNor AlGaInN, and the well layers may include a material such as GaN andAlGaN. For example, the active layer 175 c includes AlGaInN as thequantum layer and AlInN as the well layer, and as described above, theactive layer 175 c may emit blue light having a center wavelength bandof 450 nm to 495 nm.

The light emitted from the active layer 175 c may exit not only throughthe outer surfaces of the light-emitting element 175 in the longitudinaldirection but also through both side surfaces. For example, thedirection in which the light emitted from the active layer 175 cpropagates is not limited to one direction.

The electrode layer 175 d may be an ohmic contact electrode or aSchottky contact electrode. The light-emitting element 175 may includeat least one electrode layer 175 d. When the light-emitting element 175is electrically connected to the first electrode 171 or the secondelectrode 173, the resistance between the light-emitting element 175 andthe first electrode 171 or between the light-emitting element 175 andthe second electrode 173 may be reduced due to the electrode layer 175d. The electrode layer 175 d may include a conductive metal materialsuch as at least one of aluminum (Al), titanium (Ti), indium (In), gold(Au), silver (Ag), indium tin oxide (ITO), indium zinc oxide (IZO) andindium tin-zinc oxide (ITZO). The electrode layer 175 d may include asemiconductor material doped with n-type or p-type impurities. Theelectrode layer 175 d may include the same or similar material or mayinclude different materials. It is, however, to be understood that thedisclosure is not limited thereto.

The insulating layer 175 e is disposed to surround the outer surfaces ofthe first semiconductor layer 175 a, the second semiconductor layer 175b, the active layer 175 c, and the electrode layer 175 d. The insulatinglayer 175 e serves to protect the first semiconductor layer 175 a, thesecond semiconductor layer 175 b, the active layer 175 c, and theelectrode layer 175 d. The insulating layer 175 e may be formed toexpose both ends of the light-emitting element 175 in the longitudinaldirection. For example, an end of the first semiconductor layer 175 aand another end of the electrode layer 175 d may not be covered oroverlapped by the insulating layer 175 e but may be exposed. As theinsulating layer 175 e includes the active layer 175 c, and may cover oroverlap only the outer surface of a part of the first semiconductorlayer 175 a and a part of the second semiconductor layer 175 b, or maycover or overlap only the outer surface of a part of the electrode layer175 d.

The insulating layer 175 e may include materials having an insulatingproperty such as silicon oxide (SiOx), silicon nitride (SiNx), siliconoxynitride (SiOxNy), aluminum nitride (AlN) and aluminum oxide (Al₂O₃).Accordingly, it is possible to prevent an electrical short-circuit thatmay be created when the active layer 175 c is brought into contact withthe first electrode 171 and the second electrode 173 to which anelectrical signal is transmitted. Since the insulating layer 175 e mayinclude the active layer 175 c to protect the outer surface of thelight-emitting element 175, it may be possible to avoid a decrease inluminous efficiency.

FIG. 69 is a schematic cross-sectional view taken along lines XII-XII′and XIII-XIII′ of FIG. 66 .

Referring to FIG. 69 , the display layer DISL may include a thin-filmtransistor layer TFTL, an emission material layer EML, and anencapsulation layer TFEL disposed on a substrate SUB. The thin-filmtransistor layer TFTL of FIG. 69 is substantially identical to thatdescribed above with reference to FIG. 19 .

The emission material layer EML may include a first inner bank 410, asecond inner bank 420, a first electrode 171, a second electrode 173, acontact electrode 174, a light-emitting element 175, a first insulatinglayer 181, a second insulating layer 182, and a third insulating layer183.

The first inner bank 410, the second inner bank 420 and the outer bank430 may be disposed on a planarization layer 160. The first inner bank410, the second inner bank 420 and the outer bank 430 may protrude fromthe upper surface of the planarization layer 160. The first inner bank410, the second inner bank 420 and the outer bank 430 may have, but isnot limited to, a trapezoidal cross-sectional shape. Each of the firstinner bank 410, the second inner bank 420 and the outer bank 430 mayinclude a lower surface in contact with the upper surface of theplanarization layer 160, an upper surface opposed to the lower surface,and side surfaces between the upper surface and the lower surface. Theside surfaces of the first inner bank 410, the side surfaces of thesecond inner bank 420, and the side surfaces of the third inner bank 430may be inclined.

The first inner bank 410 may be spaced apart from the second inner bank420. The first inner bank 410 and the second inner bank 420 may be anorganic layer such as an acrylic resin, an epoxy resin, a phenolicresin, a polyamide resin, and a polyimide resin.

The first electrode branch 171B may be disposed on the first inner bank410, and the second electrode branch 173B may be disposed on the secondinner bank 420. The first electrode branch 171B may be electricallyconnected to the first electrode stem 171S, and the first electrode stem171S may be electrically connected to the drain electrode 124 of thethin-film transistor 120 in the first electrode contact hole CNTD.Therefore, the first electrode 171 may receive a voltage from the drainelectrode 124 of the thin-film transistor 120.

The first electrode 171 and the second electrode 173 may include aconductive material having high reflectance. For example, the firstelectrode 171 and the second electrode 173 may include a metal such assilver (Ag), copper (Cu) and aluminum (Al). Therefore, some of thelights that are emitted from the light-emitting element 175 and travelstoward the first electrode 171 and the second electrode 173 arereflected off the first electrode 171 and the second electrode 173, sothat they may travel toward the upper side of the light-emitting element175.

The first insulating layer 181 may be disposed on the first electrode171 and the second electrode branch 173B. The first insulating layer 181may cover or overlap a first electrode stem 171S, a first electrodebranch 171B disposed on the side surfaces of the first inner bank 410,and a second electrode branch 173B disposed on the side surfaces of thesecond inner bank 420. The first electrode branch 171B disposed on theupper surface of the first inner bank 410 and the second electrodebranch 173B disposed on the upper surface of the second inner bank 420may not be covered or overlapped by the first insulating layer 181 butmay be exposed. The first insulating layer 181 may be disposed on theouter bank 430. The first insulating layer 181 may be formed of aninorganic layer, for example, a silicon nitride layer, a siliconoxynitride layer, a silicon oxide layer, a titanium oxide layer, or analuminum oxide layer.

The light-emitting element 175 may be disposed on the first insulatinglayer 181 disposed between the first inner bank 410 and the second innerbank 420. One end of the light-emitting element 175 may be disposedadjacent to the first inner bank 410, while the other end thereof may bedisposed adjacent to the second inner bank 420.

The second insulating layer 182 may be disposed on the light-emittingelement 175. The second insulating layer 182 may be formed of aninorganic layer, for example, a silicon nitride layer, a siliconoxynitride layer, a silicon oxide layer, a titanium oxide layer, or analuminum oxide layer.

The first contact electrode 174 a may be disposed on the first electrodebranch 171B that may not be covered or overlapped by the firstinsulating layer 181 but may be exposed and may be in contact with oneend of the light-emitting element 175. The first contact electrode 174 amay be disposed on the second insulating layer 182.

The first connection pattern CP1 may be disposed on the first insulatinglayer 181 covering or overlapping or disposed on the outer bank 430. Thefirst connection pattern CP1 may be made of the same or similar materialon a same layer as the first contact electrode 174 a.

The third insulating layer 183 may be disposed on the first contactelectrode 174 a and the first connection pattern CP1. The thirdinsulating layer 183 may cover or overlap the first contact electrode174 a to electrically separate the first contact electrode 174 a fromthe second contact electrode 174 b. The third insulating layer 183 maybe formed of an inorganic layer, for example, a silicon nitride layer, asilicon oxynitride layer, a silicon oxide layer, a titanium oxide layer,or an aluminum oxide layer.

The second contact electrode 174 b may be disposed on the secondelectrode branch 173B that may not be covered or overlapped by the firstinsulating layer 181 but may be exposed and may be in electrical contactwith the other end of the light-emitting element 175. The second contactelectrode 174 b may be disposed on the second insulating layer 182 andthe third insulating layer 183.

The first conductive pattern AP may be disposed on the third interlayerdielectric layer 183. The first conductive pattern AP may be made of thesame or similar material on a same layer as the second contact electrode174 b. The first conductive pattern AP may not overlap the first contactelectrode 174 a and the second contact electrode 174 b in the thirddirection (z-axis direction). The first conductive pattern AP mayoverlap the first electrode branch 171B in the third direction (z-axisdirection).

The first conductive pattern AP may be electrically connected to thefirst connection pattern CP1 through a first connection contact holeCNTC1. The first connection contact hole CNTC1 may be a hole penetratingthrough the third insulating layer 183 to expose the first connectionpattern CP1.

As shown in FIG. 69 , the first conductive pattern AP may be made of thesame or similar material on a same layer as the second contact electrode174 b, and the first connection pattern CP1 may be made of the same orsimilar material on a same layer as the first contact electrode 174 a.Therefore, the first conductive pattern may be formed without anyadditional process, and the first conductive pattern AP may be utilizedas a patch antenna for mobile communications or an RFID tag antenna fornear field communications.

FIG. 70 is a schematic cross-sectional view taken along lines XII-XII′and XIII-XIII′ of FIG. 69 .

An embodiment of FIG. 70 may be different from an embodiment of FIG. 69in that a first conductive pattern AP may be disposed on a firstinsulating layer 181, and a first connection pattern CP1 may be disposedon a third insulating layer 183.

Referring to FIG. 70 , the first conductive pattern AP may be disposedon the first insulating layer 181. The first conductive pattern AP maybe made of the same or similar material on a same layer as the firstcontact electrode 174 a. The first conductive pattern AP may not overlapthe first contact electrode 174 a and the second contact electrode 174 bin the third direction (z-axis direction). The first conductive patternAP may overlap the first electrode branch 171B in the third direction(z-axis direction).

The third insulating layer 183 may be disposed on the first contactelectrode 174 a and the first conductive pattern AP. The firstconnection pattern CP1 may be disposed on the third insulating layer 183covering or overlapping or disposed on the outer bank 430. The firstconnection pattern CP1 may be made of the same or similar material on asame layer as the second contact electrode 174 b.

The first connection pattern CP1 may be electrically connected to thefirst conductive pattern AP through a first connection contact holeCNTC1. The first connection contact hole CNTC1 may be a hole penetratingthrough the third insulating layer 183 to expose the first conductivepattern AP.

As shown in FIG. 70 , the first conductive pattern AP may be made of thesame or similar material on a same layer as the first contact electrode174 a, and the first connection pattern CP1 may be made of the same orsimilar material on a same layer as the second contact electrode 174 b.Therefore, the first conductive pattern AP may be formed without anyadditional process, and the first conductive pattern AP may be utilizedas a patch antenna for mobile communications or an RFID tag antenna fornear field communications.

FIG. 71 is a schematic cross-sectional view taken along lines XII-XII′and XIII-XIII′ of FIG. 69 .

An embodiment of FIG. 71 may be different from an embodiment of FIG. 69in that a first contact electrode 174 a, a second contact electrode 174b and a first conductive pattern AP may be disposed on a firstinsulating layer 181, and that the first connection pattern CP1 may becovered by or overlapped by the first insulating layer 181.

Referring to FIG. 71 , the first connection pattern CP1 may be disposedon the outer bank 430. The first connection pattern CP1 may be made ofthe same or similar material on a same layer as the first electrode 171and the second electrode 173. The first insulating layer 181 may bedisposed on the first connection pattern CP1.

The first contact electrode 174 a, the second contact electrode 174 band the first conductive pattern AP may be disposed on the firstinsulating layer 181. The first contact electrode 174 a, the secondcontact electrode 174 b and the first conductive pattern AP may becovered or overlapped by the third insulating layer 183. The firstconductive pattern AP may be made of the same or similar material on asame layer as the first contact electrode 174 a and the second contactelectrode 174 b. The first conductive pattern AP may not overlap thefirst contact electrode 174 a and the second contact electrode 174 b inthe third direction (z-axis direction). The first conductive pattern APmay overlap the first electrode branch 171B in the third direction(z-axis direction).

The first conductive pattern AP may be electrically connected to thefirst connection pattern CP1 through a first connection contact holeCNTC1. The first connection contact hole CNTC1 may be a hole penetratingthrough the first insulating layer 181 to expose the first connectionpattern CP1.

As shown in FIG. 73 , the first conductive pattern AP may be made of thesame or similar material on a same layer as the first contact electrode174 a and the second contact electrode 174 b, and the first connectionpattern CP1 may be made of the same or similar material on a same layeras the first electrode 171 and the second contact electrode 173.Therefore, the first conductive pattern AP may be formed without anyadditional process, and the first conductive pattern AP may be utilizedas a patch antenna for mobile communications or an RFID tag antenna fornear field communications.

FIG. 72 is a plan view showing an example of the pixels in the displayarea of FIG. 65 . FIG. 73 is a schematic cross-sectional view takenalong lines XVII-XVII′ and XVIII-XVIII′ of FIG. 72 .

An embodiment shown in FIGS. 72 and 73 may be different from anembodiment of FIGS. 66 and 69 in that a first conductive pattern AP maybe made of the same or similar material on a same layer as a firstelectrode 171 and a second electrode 173, and that a first connectionpattern CP1 may be made of the same or similar material on a same layeras a first contact electrode 174 a.

Referring to FIGS. 72 and 73 , each of the sub-pixels PX1, PX2 and PX3may include first conductive patterns AP, and each of the firstconductive patterns AP may be electrically connected with one anothervia first connection patterns CP1. For example, each of the sub-pixelsPX1, PX2 and PX3 may include two first conductive patterns AP as shownin FIG. 74 . The first connection pattern CP1 may not only electricallyconnect the first conductive patterns AP of each of the sub-pixels PX1,PX2 and PX3, but also the first conductive patterns AP of the sub-pixelsPX1, PX2 and PX3 adjacent to one another in the first direction (x-axisdirection).

One of the first conductive patterns AP may be disposed between therespective one of the first electrode branches 171B and the outer bank430. Another one of the first conductive patterns AP may be disposedbetween the respective one of the first electrode branches 171B and theouter bank 430. Each of the first conductive patterns AP may be disposedbetween the first electrode branch 171B and the second electrode stem173S. The second electrode branch 173B may be disposed between the firstconductive patterns AP.

The first conductive patterns AP may be disposed on the planarizationlayer 160. The first conductive patterns AP may be made of the same orsimilar material on a same layer as the first electrode 171 and thesecond electrode 173. The first conductive patterns AP may not overlapthe first electrode 171, the second electrode 173, the first contactelectrode 174 a, and the second contact electrode 174 b in the thirddirection (z-axis direction). The first insulating layer 181 may bedisposed on the first conductive patterns AP.

The first connection pattern CP1 may be disposed on the first insulatinglayer 181 covering or overlapping or disposed on the outer bank 430. Thefirst connection pattern CP1 may be made of the same or similar materialon a same layer as the first contact electrode 174 a. The thirdinsulating layer 183 may be disposed on the first contact electrode 174a and the first connection pattern CP1.

The first connection pattern CP1 may be electrically connected to thefirst conductive pattern AP through a first connection contact holeCNTC1. The first connection contact hole CNTC1 may be a hole penetratingthrough the first insulating layer 181 to expose the first connectionpattern CP1. The first connection pattern CP1 may intersect the secondelectrode branch 173B.

As shown in FIGS. 72 and 73 , the first conductive pattern AP may bemade of the same or similar material on a same layer as the firstelectrode 171 and the second electrode 173, and the first connectionpattern CP1 may be made of the same or similar material on a same layeras the first contact electrode 174 a. Therefore, the first conductivepattern AP may be formed without any additional process, and the firstconductive pattern AP may be utilized as a patch antenna for mobilecommunications or an RFID tag antenna for near field communications.

FIG. 74 is a schematic cross-sectional view taken along lines XVII-XVII′and XVIII-XVIII′ of FIG. 72 .

An embodiment of FIG. 74 may be different from an embodiment of FIG. 73in that a first connection pattern CP1 may be disposed on a thirdinsulating layer 183.

Referring to FIG. 74 , the first connection pattern CP1 may be disposedon the third insulating layer 183 covering or overlapping or disposed onthe outer bank 430. The first connection pattern CP1 may be made of thesame or similar material on a same layer as the second contact electrode174 b.

The first connection pattern CP1 may be electrically connected to thefirst conductive pattern AP through a first connection contact holeCNTC1. The first connection contact hole CNTC1 may be a hole penetratingthrough the first insulating layer 181 and the third insulating layer183 to expose the first conductive pattern AP.

As shown in FIG. 74 , the first conductive pattern AP may be made of thesame or similar material on a same layer as the first electrode 171 andthe second electrode 173, and the first connection pattern CP1 may bemade of the same or similar material on a same layer as the secondcontact electrode 174 b. Therefore, the first conductive pattern AP maybe formed without any additional process, and the first conductivepattern AP may be utilized as a patch antenna for mobile communicationsor an RFID tag antenna for near field communications.

FIG. 75 is a schematic cross-sectional view taken along lines XVII-XVII′and XVIII-XVIII′ of FIG. 74 .

An embodiment of FIG. 75 may be different from an embodiment of FIG. 73in that a first contact electrode 174 a, a second contact electrode 174b and a first connection pattern CP1 may be disposed on a firstinsulating layer 181.

Referring to FIG. 75 , the first connection pattern CP1 may be made ofthe same or similar material on a same layer as the first contactelectrode 174 a and the second contact electrode 174 b. The firstcontact electrode 174 a, the second contact electrode 174 b and thefirst connection pattern CP1 may be covered or overlapped by the thirdinsulating layer 183. The first connection pattern CP1 may be disposedon the first insulating layer 181 covering or overlapping or disposed onthe outer bank 430.

The first connection pattern CP1 may be electrically connected to thefirst conductive pattern AP through a first connection contact holeCNTC1. The first connection contact hole CNTC1 may be a hole penetratingthrough the first insulating layer 181 to expose the first conductivepattern AP.

As shown in FIG. 75 , the first conductive pattern AP may be made of thesame or similar material on a same layer as the first electrode 171 andthe second electrode 173, and the first connection pattern CP1 may bemade of the same or similar material on a same layer as the firstcontact electrode 174 a and the second contact electrode 174 b.Therefore, the first conductive pattern AP may be formed without anyadditional process, and the first conductive pattern AP may be utilizedas a patch antenna for mobile communications or an RFID tag antenna fornear field communications.

FIG. 76 is a plan view showing an example of the pixels in the displayarea of FIG. 65 . FIG. 79 is a schematic cross-sectional view takenalong lines XX-XX′ and XXI-XXI′ of FIG. 78 .

An embodiment shown in FIGS. 76 and 77 may be different from anembodiment shown in FIGS. 66 and 69 in that a shielding electrode 177 incontact with a first contact electrode 174 a may be included, and afirst conductive pattern AP may be made of the same or similar materialas the shielding electrode 177.

Referring to FIGS. 76 and 77 , the shielding electrode 177 may overlap apart of the first contact electrode 174 a. A side of the first contactelectrode 174 a may be in electrical contact with the light-emittingelement 175, and another side of the first contact electrode 174 a maybe in electrical contact with the shielding electrode 177.

The shielding electrode 177 may be disposed on the first insulatinglayer 181 disposed on the upper and side surfaces of the first innerbank 410. The shielding electrode 177 may be in contact with the firstcontact electrode 174 a on the upper surface of the first inner bank410. The first contact electrode 174 a may be disposed on the shieldingelectrode 177 on the upper surface of the first inner bank 410. Theshielding electrode 177 may be made up of a single layer or multiplelayers of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold(Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or analloy thereof.

The third insulating layer 183 may be disposed on the first contactelectrode 174 a and the shielding pattern 177. The first contactelectrode 174 a and the shielding electrode 177 may be covered oroverlapped by the third insulating layer 183.

The first conductive pattern AP may be disposed to surround the emissionareas EMA1, EMA2 and EMA3. The first conductive pattern AP may be spacedapart from the shielding electrode 177. The first conductive pattern APmay not overlap the first contact electrode 174 a, the second contactelectrode 174 b and the shielding electrode 177 in the third direction(z-axis direction).

The first conductive pattern AP may be made of the same or similarmaterial on a same layer as the shielding electrode 177. The firstconductive pattern AP may be disposed on the first insulating layer 181.The third insulating layer 183 may be disposed on the first conductivepattern AP.

The first connection pattern CP1 may be disposed on the outer bank 430.The first connection pattern CP1 may be made of the same or similarmaterial on a same layer as the first electrode 171 and the secondelectrode 173. The first insulating layer 181 may be disposed on thefirst connection pattern CP1.

The first connection pattern CP1 may be electrically connected to thefirst conductive pattern AP through a first connection contact holeCNTC1. The first connection contact hole CNTC1 may be a hole penetratingthrough the first insulating layer 181 to expose the first connectionpattern CP1.

As shown in FIGS. 76 and 77 , the first conductive pattern AP may bemade of the same or similar material on a same layer as the shieldingelectrode 177, and the first connection pattern CP1 may be made of thesame or similar material on a same layer as the first electrode 171 andthe second electrode 173. Therefore, the first conductive pattern AP maybe formed without any additional process, and the first conductivepattern AP may be utilized as a patch antenna for mobile communicationsor an RFID tag antenna for near field communications.

FIG. 78 is a plan view showing an example of the pixels in the displayarea of FIG. 65 . FIG. 79 is a schematic cross-sectional view takenalong line XXII-XXII′ of FIG. 78 .

An embodiment shown in FIGS. 78 and 79 may be different from anembodiment of FIGS. 66 and 69 in that a first conductive pattern AP maybe disposed on an encapsulation layer TFEL.

Referring to FIGS. 78 and 79 , the first conductive pattern AP may beformed or disposed on the encapsulation layer TFEL, so that it mayoverlap the other areas than emission areas EMA1, EMA2 and EMA3 of thesub-pixels PX1, PX2 and PX3. The first conductive pattern AP may overlapa first electrode stem 171S and a first electrode branch 171B of a firstelectrode 171, a second electrode stem 173S and a second electrodebranch 173B a second electrode 173, and an outer bank 430. The firstconductive pattern AP may be utilized as a patch antenna for mobilecommunication or an antenna for an RFID tag for short rangecommunication.

The first conductive pattern AP may include a conductive material havinghigh reflectance. For example, the first conductive pattern AP mayinclude a metal such as silver (Ag), copper (Cu) and aluminum (Al). As aresult, the light incident from above the display panel 300 may bereflected by the first conductive pattern AP to be output to theoutside. Therefore, the display panel 300 may be a reflective displaypanel that may reflect an object or a background on the upper surface ofthe display panel 300.

As shown in FIGS. 78 and 79 , since the first conductive pattern AP isdisposed on the encapsulation layer TFEL, the first conductive patternAP may be spaced apart from the first electrode 171, the secondelectrode 173, the first contact electrode 174 a and the second contactelectrode 174 b by 200 μm or more. In this manner, it is possible toreduce influence on the first electrode 171, the second electrode 173,the first contact electrode 174 a and the second contact electrode 174 bby electromagnetic waves from the first conductive pattern AP.

FIG. 80 is a schematic cross-sectional view taken along line XXII-XXII′of FIG. 78 .

An embodiment of FIG. 80 may be different from an embodiment of FIG. 82in that a second conductive pattern GP overlapping the first conductivepattern AP may be disposed.

Referring to FIG. 80 , a second conductive pattern GP to which theground voltage may be applied may be disposed on an encapsulation layerTFEL. The second conductive pattern GP may overlap the other areas thanthe emission areas EMA1, EMA2 and EMA3 of the sub-pixels PX1, PX2 andPX3. The second conductive pattern GP may overlap a first electrode stem171S and a first electrode branch 171B of a first electrode 171, asecond electrode stem 173S and a second electrode branch 173B a secondelectrode 173, and an outer bank 430.

The second conductive pattern GP may include a conductive material. Forexample, the second conductive pattern GP may be made up of a singlelayer or multiple layers of one of molybdenum (Mo), aluminum (Al),chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) andcopper (Cu) or an alloy thereof. Alternatively, the second conductivepattern GP may include a conductive material having high reflectance.For example, the second conductive pattern GP may include a metal suchas silver (Ag), copper (Cu) and aluminum (Al). When the secondconductive pattern GP includes a conductive material having highreflectance, it is possible to reflect the light incident from above thedisplay panel 300 by using the two reflective layers, i.e., the secondconductive pattern GP and the first conductive pattern AP.

A fourth insulating layer 184 may be disposed on the second conductivepattern GP. The fourth insulating layer 184 may be formed of aninorganic layer, for example, a silicon nitride layer, a siliconoxynitride layer, a silicon oxide layer, a titanium oxide layer, or analuminum oxide layer.

The first conductive pattern AP may be disposed on the fourth insulatinglayer 184. The first conductive pattern AP may be disposed to overlapthe second conductive pattern GP in the third direction (z-axisdirection). As shown in FIG. 80 , since the second conductive pattern GPis disposed on the encapsulation layer TFEL and the first conductivepattern AP is disposed on the encapsulation layer TFEL, electromagneticwaves from the first conductive pattern AP may be blocked by the secondconductive pattern GP. Therefore, it is possible to reduce influence onthe first electrode 171, the second electrode 173, the first contactelectrode 174 a and the second contact electrode 174 b byelectromagnetic waves from the first conductive pattern AP.

FIG. 81 is a plan view showing an example of the pixels in the displayarea of FIG. 65 .

An embodiment of FIG. 81 may be different from an embodiment of FIG. 80in that a first conductive pattern AP may include slits. The slits maybe openings or apertures.

Referring to FIG. 81 , each of the slits of the first conductive patternAP may be inclined with respect to the second direction (y-axisdirection). Due to the slits, the area where the first conductivepattern AP overlaps with the first electrode 171 and the area where thefirst conductive pattern AP overlaps with the second electrode 173 maybe reduced. As a result, the parasitic capacitance between the firstconductive pattern AP and the first electrode 171 and the parasiticcapacitance between the first conductive pattern AP and the secondelectrode 173 may be reduced. Therefore, it is possible to reduce theinfluence on the first electrode 171 and the second electrode 173 byelectromagnetic waves from the first conductive pattern AP.

Although the slits are disposed between the emission areas EMA1, EMA2and EMA3 adjacent to one another in the first direction (x-axisdirection) in FIG. 81 , the positions of the slits are not limited tothat shown.

It is to be noted that the sensor electrode layer SENL including thefirst conductive pattern AP may be disposed on the encapsulation layerTFE, instead of the first conductive pattern AP in FIGS. 80 and 81 .

FIG. 82 is a plan view showing an example of the pixels in the displayarea of FIG. 65 .

Referring to FIG. 82 , the display area DA may include pixels PXs, anon-emission area NEA, and transmissive areas TA.

Each of the pixels PXG may include a first sub-pixel PX1, a secondsub-pixel PX2 and a third sub-pixel PX3. Each of the first sub-pixelPX1, the second sub-pixel PX2 and the third sub-pixel PX3 may include alight-emitting element that emits light. The light-emitting element maybe an organic light-emitting diode including an organic light-emittinglayer, a micro LED, a quantum-dot light-emitting diode including aquantum-dot light-emitting layer, or an inorganic light-emitting diodeincluding an inorganic semiconductor.

The first sub-pixel PX1 may emit a first light, the second sub-pixel PX2may emit a second light, and the third sub-pixel PX3 may emit a thirdlight. The first light may be red light, the second light may be greenlight, and the third light may be blue light. It is, however, to beunderstood that the disclosure is not limited thereto. Alternatively,the sub-pixels PX1, PX2 and PX3 may emit light of the same color.

Each of the sub-pixels PX1, PX2 and PX3 may have, but is not limited to,a substantially rectangular shape having longer sides in the firstdirection (x-axis direction) and shorter sides in the second direction(y-axis direction). The sub-pixels PX1, PX2 and PX3 may be arranged ordisposed in, but is not limited to, the second direction (y-axisdirection).

In the non-emission area NEA, lines for driving the light-emittingelement of each of the sub-pixels PX1, PX2 and PX3 may be disposed. Thenon-emission area NEA may surround the sub-pixels PX1, PX2 and PX3. Thenon-emission area NEA may be disposed between adjacent ones of thesub-pixels PX1, PX2 and PX3. The non-emission area NEA may be disposedbetween the transmissive area TA and each of the sub-pixels PX1, PX2 andPX3. The non-emission area NEA may be disposed between adjacent ones ofthe transmissive areas TA.

The transmissive areas TA transmit the incident light substantially asit is. The transmissive areas TA may be arranged or disposed in thesecond direction (y-axis direction). Due to the transmissive areas TA,an object or a background located or disposed on the lower surface ofthe display panel 300 may be seen from the upper surface of the displaypanel 300.

The first conductive pattern AP may be disposed in the transmissiveareas TA. The first conductive pattern AP may have a substantially meshtopology. The width of the first conductive patterns AP may be 2 μm orless in order to prevent the first conductive pattern AP from beingrecognized by the user. Although the first conductive pattern AP isdisposed in every transmissive area TA in the example shown in FIG. 82 ,but the disclosure is not limited thereto. The first conductive patternAP may be formed or disposed in some of the transmissive areas TA butmay not be formed or disposed in the others.

The first conductive pattern AP may be electrically connected to afeeding line in the non-emission area NEA. Therefore, the firstconductive pattern AP may be electrically connected to the radiofrequency driver 350 disposed on the display circuit board 310 or thefirst flexible film 340 through the feeding line. Therefore, the firstconductive pattern AP may be utilized as a patch antenna for mobilecommunications or an antenna for an RFID tag for near fieldcommunications.

As shown in FIG. 82 , when the display panel 300 may be a transparentdisplay panel including transmissive areas TA, or it includestransmissive areas TA overlapping sensor devices disposed on the lowersurface of the display panel 300, the first conductive pattern AP formedor disposed in the transmissive areas TA of the display panel 300 may beutilized as the antenna.

FIG. 83 is a schematic cross-sectional view showing an example of asub-pixel and an example of a transmissive area of FIG. 82 .

Referring to FIG. 83 , the display layer DISL may include a thin-filmtransistor layer TFTL, an emission material layer EML, and anencapsulation layer TFEL disposed on a substrate SUB. The thin-filmtransistor layer TFTL, the emission material layer EML and theencapsulation layer TFEL of the sub-pixel of FIG. 83 is substantiallyidentical to that described above with reference to FIG. 21 .

The first conductive pattern AP may be made of the same or similarmaterial on a same layer as the first electrode 171 in the transmissivearea TA. The first conductive pattern AP may be disposed on theplanarization layer 160.

The second conductive pattern GP may overlap the first conductivepattern AP in the third direction (z-axis direction) in the transmissivearea TA. The second conductive pattern GP may be eliminated. The secondconductive pattern GP may be made of the same or similar material on asame layer as the source electrode 123 and the drain electrode 124 ofthe thin-film transistor 120. The second conductive pattern GP may bedisposed on the first interlayer dielectric layer 141.

Alternatively, the second conductive pattern GP may be made of the sameor similar material on a same layer as the gate electrode 122 of thethin-film transistor 120. The second conductive pattern GP may bedisposed on the gate insulating layer 130.

As shown in FIG. 83 , the first conductive pattern AP may be made of thesame or similar material on a same layer as the first electrode 171 inthe transmissive area TA, and the second conductive pattern GP may bemade of the same or similar material on a same layer as the sourceelectrode 123 and the drain electrode 124 of the thin-film transistor120. Therefore, the first conductive pattern AP may be formed withoutany additional process, and the first conductive pattern AP may beutilized as a patch antenna for mobile communications or an RFID tagantenna for near field communications.

FIG. 84 is a schematic cross-sectional view showing an example of thetransmissive area of FIG. 82 .

Referring to FIG. 84 , the first conductive pattern AP may be made ofthe same or similar material on a same layer as the source electrode 123and the drain electrode 124 of the thin-film transistor 120 in thetransmissive area TA. The first conductive pattern AP may be disposed onthe second interlayer dielectric layer 142.

The second conductive pattern GP may overlap the first conductivepattern AP in the third direction (z-axis direction) in the transmissivearea TA. The second conductive pattern GP may be eliminated. The secondconductive pattern GP may be made of the same or similar material on asame layer as a capacitor electrode 125. The second conductive patternGP may be disposed on the first interlayer dielectric layer 141.

As shown in FIG. 84 , the first conductive pattern AP may be made of thesame or similar material on a same layer as the source electrode 123 andthe drain electrode of the thin-film transistor 120 in the transmissivearea TA, and the second conductive pattern GP may be made of the same orsimilar material on a same layer as the capacitor electrode 125.Therefore, the first conductive pattern AP may be formed without anyadditional process, and the first conductive pattern AP may be utilizedas a patch antenna for mobile communications or an RFID tag antenna fornear field communications.

FIG. 85 is a schematic cross-sectional view showing an example of thetransmissive area of FIG. 82 .

Referring to FIG. 85 , the first conductive pattern AP may be made ofthe same or similar material on a same layer as the capacitor electrode125 in the transmissive area TA. The first conductive pattern AP may bedisposed on the first interlayer dielectric layer 141.

The second conductive pattern GP may overlap the first conductivepattern AP in the third direction (z-axis direction) in the transmissivearea TA. The second conductive pattern GP may be eliminated. The secondconductive pattern GP may be made of the same or similar material on asame layer as the gate electrode 122 of the thin-film transistor 120.The second conductive pattern GP may be disposed on the gate insulatinglayer 130.

As shown in FIG. 85 , the first conductive pattern AP may be made of thesame or similar material on a same layer as the capacitor electrode 125in the transmissive area TA, and the second conductive pattern GP may bemade of the same or similar material on a same layer as the gateelectrode 122 of the thin-film transistor 120. Therefore, the firstconductive pattern AP may be formed without any additional process, andthe first conductive pattern AP may be utilized as a patch antenna formobile communications or an RFID tag antenna for near fieldcommunications.

FIG. 86 is a schematic cross-sectional view showing an example of thetransmissive area of FIG. 82 .

Referring to FIG. 86 , the first conductive pattern AP may be made ofthe same or similar material on a same layer as the gate electrode 122of the thin-film transistor 120 in the transmissive area TA. The firstconductive pattern AP may be disposed on the gate insulating layer 130.

The second conductive pattern GP may overlap the first conductivepattern AP in the third direction (z-axis direction) in the transmissivearea TA. The second conductive pattern GP may be eliminated. The secondconductive pattern GP may be made of the same or similar material on asame layer as a first light-blocking layer BML1. The second conductivepattern GP may be disposed on the substrate SUB, and the first bufferlayer BF1 may be disposed on the second conductive pattern GP.

As shown in FIG. 86 , the first conductive pattern AP may be made of thesame or similar material on a same layer as the gate electrode 122 ofthe thin-film transistor 120 in the transmissive area TA, and the secondconductive pattern GP may be made of the same or similar material on asame layer as the first light-blocking layer BML1. Therefore, the firstconductive pattern AP may be utilized as a patch antenna for mobilecommunications or an antenna for an RFID tag for near fieldcommunications.

FIG. 87 is a schematic cross-sectional view showing an example of thetransmissive area of FIG. 82 .

Referring to FIG. 87 , the first conductive pattern AP may be made ofthe same or similar material on a same layer as the active layer 121 ofthe thin-film transistor 120 in the transmissive area TA. In such case,the first conductive pattern AP may have conductivity. The firstconductive pattern AP may be disposed on the first buffer layer BF1.

The second conductive pattern GP may overlap the first conductivepattern AP in the third direction (z-axis direction) in the transmissivearea TA. The second conductive pattern GP may be eliminated. The secondconductive pattern GP may be made of the same or similar material on asame layer as a first light-blocking layer BML1. The second conductivepattern GP may be disposed on the substrate SUB, and the first bufferlayer BF1 may be disposed on the second conductive pattern GP.

As shown in FIG. 87 , the first conductive pattern AP may be made of thesame or similar material on a same layer as the active layer 121 of thethin-film transistor 120 in the transmissive area TA, and the secondconductive pattern GP may be made of the same or similar material on asame layer as the first light-blocking layer BML1. Therefore, the firstconductive pattern AP may be utilized as a patch antenna for mobilecommunications or an antenna for an RFID tag for near fieldcommunications.

FIG. 88 is a schematic cross-sectional view showing an example of thetransmissive area of FIG. 82 .

Referring to FIG. 88 , the first conductive pattern AP may be made ofthe same or similar material on a same layer as the first light-blockinglayer BML1 in the transmissive area TA. The first conductive pattern APmay be disposed on the substrate SUB, and the first buffer layer BF1 maybe disposed on the second conductive pattern GP.

The second conductive pattern GP may overlap the first conductivepattern AP in the third direction (z-axis direction) in the transmissivearea TA. The second conductive pattern GP may be eliminated. The secondconductive pattern GP may be disposed on the opposite surface of thesubstrate SUB, and a third buffer layer BF3 may be disposed on thesecond conductive pattern GP.

The first conductive pattern AP may be utilized as a patch antenna formobile communication or an antenna for an RFID tag for short rangecommunication.

FIG. 89 is a schematic cross-sectional view showing an example of thesub-pixels and an example of the transmissive areas of FIG. 82 .

Referring to FIG. 89 , the thin-film transistor layer TFTL may include afirst thin-film transistor 120 a including an active layer 121 a made ofpolysilicon and a second thin-film transistor 120 b including an activelayer 121 b made of an oxide semiconductor.

The first thin-film transistor 120 a may include a first active layer121 a, a first gate electrode 122 a, a first source electrode 123 a, anda first drain electrode 124 a. The second thin-film transistor 120 b mayinclude a second active layer 121 b, a second gate electrode 122 b, asecond source electrode 123 b, and a second drain electrode 124 b.

The first active layer 121 a may be disposed on the first buffer layerBF1. The first active layer 121 a may be made of polycrystalline siliconor low-temperature polysilicon (LTPS).

The first gate insulating layer 131 may be disposed on the first activelayer 121 a. The first gate insulating layer 131 may be formed of aninorganic layer, for example, a silicon nitride layer, a siliconoxynitride layer, a silicon oxide layer, a titanium oxide layer, or analuminum oxide layer.

The first gate electrode 122 a may be disposed on the first gateinsulating layer 131. The first gate electrode 122 a may overlap thefirst active layer 121 a in the third direction (z-axis direction).

The first interlayer dielectric layer 141 may be disposed on the firstgate electrode 122 a. A light-blocking layer BML may be disposed on thefirst interlayer dielectric layer 141. The light-blocking layer BML maybe made up of a single layer or multiple layers of one of molybdenum(Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel(Ni), neodymium (Nd) and copper (Cu) or an alloy thereof.

The second interlayer dielectric layer 142 may be disposed on thelight-blocking layer BML. The second active layer 121 b may be disposedon the second interlayer dielectric layer 142. The second active layer121 b may overlap the light-blocking layer BML in the third direction(z-axis direction). The second active layer 121 b may be made of anoxide semiconductor.

The second gate electrode 122 b may be disposed on the second activelayer 121 b. The second gate electrode 122 b may overlap the secondactive layer 121 b in the third direction (z-axis direction). The firstgate electrode 122 a and the second gate electrode 122 b may be made upof a single layer or multiple layers of one of molybdenum (Mo), aluminum(Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium(Nd) and copper (Cu) or an alloy thereof.

A third interlayer dielectric layer 143 may be disposed on the secondgate electrode 122 b. Each of the first interlayer dielectric layer 141,the second interlayer dielectric layer 142 and the third interlayerdielectric layer 143 may be formed of an inorganic layer, e.g., asilicon nitride layer, a silicon oxy nitride layer, a silicon oxidelayer, a titanium oxide layer, or an aluminum oxide layer.

The first source electrode 123 a, the second source electrode 123 b, thefirst drain electrode 124 a, and the second drain electrode 124 b may beformed or disposed on the third interlayer dielectric layer 143. Thefirst source electrode 123 a and the first drain electrode 124 a may beelectrically connected to the first active layer 121 a through contactholes penetrating through the first interlayer dielectric layer 141, thesecond interlayer dielectric layer 142 and the third interlayerdielectric layer 143. The second source electrode 123 b and the seconddrain electrode 124 b may be electrically connected to the second activelayer 121 b through a contact hole penetrating through the thirdinterlayer insulating layer 143. Each of the first source electrode 123a, the second source electrode 123 b, the first drain electrode 124 aand the second drain electrode 124 b may be made up of a single layer ormultiple layers made of one of molybdenum (Mo), aluminum (Al), chromium(Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper(Cu) or an alloy thereof.

The planarization layer 160 may be formed or disposed on the firstsource electrode 123 a, the second source electrode 123 b, the firstdrain electrode 124 a and the second drain electrode 124 b in order toprovide a flat surface over the step differences caused by the firstthin-film transistor 120 a and the second thin-film transistor 120 b.The planarization layer 160 may be formed of an organic layer such as anacryl resin, an epoxy resin, a phenolic resin, a polyamide resin and apolyimide resin.

The emission material layer EML and the encapsulation layer TFEL may beformed or disposed on the thin-film transistor layer TFTL. The emissionmaterial layer EML and the encapsulation layer TFEL may be substantiallyidentical to those described above with reference to FIG. 21 .

The first conductive pattern AP may be made of the same or similarmaterial on a same layer as the first electrode 171 in the transmissivearea TA. The first conductive pattern AP may be disposed on theplanarization layer 160.

The second conductive pattern GP may overlap the first conductivepattern AP in the third direction (z-axis direction) in the transmissivearea TA. The second conductive pattern GP may be eliminated. The secondconductive pattern GP may be made of the same or similar material on asame layer as the first source electrode 123 a, the second sourceelectrode 123 b, the first drain electrode 124 a and the second drainelectrode 124 b. The second conductive pattern GP may be disposed on thethird interlayer dielectric layer 143. Alternatively, the secondconductive pattern GP may be made of the same or similar material on asame layer as one of the second gate electrode 122 b, the secondlight-blocking layer BML2, the first gate electrode 122 a, and the firstlight-blocking layer BML1.

Alternatively, the first conductive pattern AP may be made of the sameor similar material on a same layer as the first source electrode 123 a,the second source electrode 123 b, the first drain electrode 124 a andthe second drain electrode 124 b. In such case, the second conductivepattern GP may be made of the same or similar material on a same layeras one of the second gate electrode 122 b, the second light-blockinglayer BML2, the first gate electrode 122 a, and the first light-blockinglayer BML1.

Alternatively, the first conductive pattern AP may be made of the sameor similar material on a same layer as the second gate electrode 122 b.In such case, the second conductive pattern GP may be made of the sameor similar material on a same layer as one of the second light-blockinglayer BML2, the first gate electrode 122 a, and the first light-blockinglayer BML1.

Alternatively, the first conductive pattern AP may be made of the sameor similar material on a same layer as the light-blocking layer BML. Insuch case, the second conductive pattern GP may be made of the same orsimilar material on a same layer as the first gate electrode 122 a andthe first light-blocking layer BML1.

Alternatively, the first conductive pattern AP may be made of the sameor similar material on a same layer as the first gate electrode 122 aand the first active layer 121 a. In such case, the second conductivepattern GP may be made of the same or similar material on a same layeras a first light-blocking layer BML1.

As shown in FIG. 89 , the first conductive pattern AP may be made of thesame or similar material on a same layer as the first electrode 171 inthe transmissive area TA, and the second conductive pattern GP may bemade of the same or similar material on a same layer as the sourceelectrode 123 and the drain electrode 124 of the thin-film transistor120. Therefore, the first conductive pattern AP may be formed withoutany additional process, and the first conductive pattern AP may beutilized as a patch antenna for mobile communications or an RFID tagantenna for near field communications.

As shown in FIG. 89 , when the thin-film transistor layer TFTL mayinclude the first thin-film transistor 120 a including the active layer121 a made of polysilicon and the second thin-film transistor 120 bincluding the active layer 121 b made of an oxide semiconductor, thedistance between the first thin-film transistor 120 a and the secondthin-film transistor 120 b may be reduced to thereby reduce thenon-emission area NEA, so that the area of the transmissive area TA maybe increased. As the area of the transmissive area TA is increased, thefirst conductive pattern AP may be disposed in a larger area.

FIG. 90 is an exploded, perspective view of a display device accordingto an embodiment.

An embodiment of FIG. 90 is different from an embodiment of FIG. 2 inthat a display area DA of a display panel 300 includes a main area MAAand a sub area SDA.

Referring to FIG. 90 , the display panel 300 may include the main areaMAA and the sub area SDA. The main area MAA may overlap with a firsttransmissive portion DA100 of a cover window 100. The sub area SDA mayoverlap with a second transmissive portion SDA100 of the cover window100. The sub area SDA may be disposed on, but is not limited to, oneside of the main area MAA, e.g., the upper side as shown in FIG. 2 . Forexample, the sub area SDA may be surrounded by the main area MAA, andmay be disposed adjacent to a corner of the display panel 300. Althoughthe display panel 300 may include one sub area SDA in the example shownin FIG. 90 , this is merely illustrative. For example, the display panel300 may include sub areas SDA.

In a bracket 600, a sensor hole SH may be formed or disposed to overlapthe sub area SDA of the display panel 300 in the third direction (z-axisdirection). The sensor hole SH may overlap the sensor devices 741, 742,743 and 744 of the main circuit board 700 in the third direction (z-axisdirection). Therefore, the sub area SDA of the display panel 300 mayoverlap the sensor devices 741, 742, 743 and 744 of the main circuitboard 700 in the third direction (z-axis direction). For example, thesub area SDA of the display panel 300 may be disposed on the sensordevices 741, 742, 743 and 744 of the main circuit board 700. The sensorhole SH may not be formed or disposed in the bracket 600. In which case,the bracket 600 may be disposed so as not to overlap the sensor area SDAof the display panel 300 in the third direction (z-axis direction).

A proximity sensor 741, an illuminance sensor 742, an iris sensor 743and a front camera sensor 744 may be disposed on one surface of the mainprocessor 710. Since the sub area SDA of the display panel 300 includesthe transmissive areas TA as shown in FIGS. 91 and 92 , the proximitysensor 741 may detect an object disposed near the upper surface of thedisplay device 10, and the illumination sensor 742 may detect thebrightness of the light incident on the upper surface of the displaydevice 10. The iris sensor 743 may capture a person's iris on an upperside of the display device 10, and the front camera sensor 744 maycapture an object on an upper side of the display device 10. The sensorsoverlapping the sub area SDA of the display panel 300 are not limited tothe proximity sensor 741, the illuminance sensor 742, the iris sensor743 and the front camera sensor 744. Other sensor devices than theproximity sensor 741, the illuminance sensor 742, the iris sensor 743and the front camera sensor 744 may be disposed to overlap the sub areaSDA of the display panel 300 in the third direction (z-axis direction).

As shown in FIG. 90 , the sensor devices 741, 742, 743 and 744 overlapthe sub area SDA of the display panel 300, a light-blocking portionNDA100 of the cover window 100 may be reduced. Therefore, the bezel ofthe display device 10 may be reduced.

FIG. 91 is a plan view showing an example of pixels in a sub area of adisplay panel. Referring to FIG. 91 , the display area DA may includepixels PXs, a non-emission area NEA, and transmissive areas TA.

An embodiment of FIG. 91 is different from an embodiment of FIG. 82 inthat each of the pixels PXG includes four sub-pixels PX1, PX2, PX3 andPX4, and that the transmissive areas TA surround four sides of a groupof pixels PXG.

Each of the pixels PXG may include a first sub-pixel PX1, a secondsub-pixel PX2, a third sub-pixel PX3 and a fourth sub-pixel PX4. Thefirst sub-pixel PX1 may emit a first light, the second sub-pixel PX2 andthe fourth sub-pixel PX4 may emit a second light, and the thirdsub-pixel PX3 may emit a third light. The first light may be red light,the second light may be green light, and the third light may be bluelight. It is, however, to be understood that the disclosure is notlimited thereto. Alternatively, the sub-pixels PX1, PX2, PX3 and PX4 mayemit light of the same color. Each of the sub-pixels PX1, PX2, PX3 andPX4 may have, but is not limited to, a substantially rectangular shapehaving longer sides in the second direction (y-axis direction) andshorter sides in the first direction (x-axis direction).

Although each of pixels PXG includes four sub-pixels PX1, PX2, PX3, PX4in the example shown in FIG. 91 , the disclosure is not limited thereto.The transmissive areas TA may be disposed on four sides of the group ofpixels PXG. A transmissive area TA may be disposed between a group ofpixels PXG and another group of pixels PXG adjacent to each other in thefirst direction (x-axis direction). A transmissive area TA may bedisposed between a group of pixels PXG and another group of pixels PXGadjacent to each other in the second direction (y-axis direction).

The transmissive areas TA transmit the incident light substantially asit is. Due to the transmissive areas TA, an object or a backgroundlocated or disposed on the lower surface of the display panel 300 may beseen from the upper surface of the display panel 300.

The first conductive pattern AP may be disposed in the transmissiveareas TA. The first conductive pattern AP may have a substantially meshtopology. The width of the first conductive patterns AP may be 2 μm orless in order to prevent the first conductive pattern AP from beingrecognized by the user. Although the first conductive pattern AP isdisposed in every transmissive area TA in the example shown in FIG. 91 ,but the disclosure is not limited thereto. The first conductive patternAP may be formed or disposed in some of the transmissive areas TA butmay not be formed or disposed in the others.

The first conductive pattern AP may be electrically connected to afeeding line in the non-emission area NEA. Accordingly, the firstconductive pattern AP may be electrically connected to the radiofrequency driver disposed on the display circuit board or the flexiblefilm through the feeding line. Therefore, the first conductive patternAP may be utilized as a patch antenna for mobile communications or anantenna for an RFID tag for near field communications.

FIG. 92 is a plan view showing an example of pixels in a sub area of adisplay panel. An embodiment of FIG. 92 is different from an embodimentof FIG. 91 in that mirror areas MA may be included.

Referring to FIG. 92 , the mirror areas MA reflect light incident fromabove the display panel 300. By virtue of the mirror areas MA, the subarea SDA of the display panel 300 may reflect an object or a backgroundon the upper surface of the display panel 300. Some of the transmissiveareas TA of FIG. 91 may be replaced with the mirror areas MA.

Although the first conductive pattern AP is disposed in everytransmissive area TA in the example shown in FIG. 92 , but thedisclosure is not limited thereto. The first conductive pattern AP maybe formed or disposed in some of the transmissive areas TA but may notbe formed or disposed in the others.

As shown in FIG. 93 , a mirror pattern MP may be disposed in the mirrorarea MA. The mirror pattern MP may be made of the same or similarmaterial on a same layer as the first electrode 171. The mirror patternMP may be disposed on the planarization layer 160. The mirror pattern MPmay be made of a metal material having a high reflectivity such as astack structure of aluminum and titanium (Ti/Al/Ti), a stack structureof aluminum and ITO (ITO/Al/ITO), an APC alloy and a stack structure ofAPC alloy and ITO (ITO/APC/ITO). The APC alloy is an alloy of silver(Ag), palladium (Pd) and copper (Cu).

Although the second electrode 173 is not disposed in the mirror area MAin the example shown in FIG. 92 , the disclosure is not limited thereto.The second electrode 173 may be disposed in the mirror area MA.

FIG. 94 is a perspective view showing a display panel according to anembodiment. FIG. 95 is a development view showing a display panelaccording to an embodiment. FIG. 96 is a front view showing an exampleof the display panel of FIG. 94 . FIG. 97 is a rear view showing anexample of the display panel of FIG. 94 . FIG. 98 is a side view showingan example of the display panel of FIG. 94 . FIG. 99 is a schematiccross-sectional view showing an example of a part of a fourth sidesurface of FIG. 95 .

A display layer DISL and a sensor electrode layer SENL of a fourth sidesurface SS4 shown in FIG. 99 are substantially identical to thosedescribed above with reference to FIG. 21 . In the example shown in FIG.99 , the mutual capacitive sensing is carried out by using the twolayers of the sensor electrode layer SENL shown in FIGS. 17 to 21 orFIGS. 55 to 58 . It is, however, to be understood that the disclosure isnot limited thereto. The mutual capacitive sensing may be carried out byusing the one layer shown in FIGS. 46 to 51 , the self-capacitivesensing may be carried out by using the one layer shown in FIGS. 52 and53 , and the strain-gauge sensing may be implemented by using the onelayer shown in FIG. 54 .

Referring to FIGS. 94 to 99 , the display panel 300 may include asubstrate having an upper surface PS, a first side surface SS1, a secondside surface SS2, a third side surface SS3, a fourth side surface SS4, afirst corner CS1, a second corner CS2, a third corner CS3, and a fourthcorner CS4.

The upper surface PS may be flat without being bent. The upper surfacePS may be a rectangular surface having shorter sides in the firstdirection (x-axis direction) and longer sides in the second direction(y-axis direction). The corners where the shorter sides and the longerside meet on the upper surface PS may be bent with a certain curvature.The upper surface PS may be the upper surface of the display panel 300.

The first side surface SS1 may be extended from the first side of theupper surface PS. The first side surface SS1 may be extended from theleft side of the upper surface PS. The first side surface SS1 may bebent at a first bending line BL1. The first bending line BL1 may be theboundary between the upper surface PS and the first side surface SS1.The first side surface PS may be a rectangular surface having shortersides in the third direction (z-axis direction) and longer sides in thesecond direction (y-axis direction) when viewed from the top. The firstside surface SS1 may be the left side surface of the display panel 300.

The second side surface SS2 may be extended from the second side of theupper surface PS. The second side surface SS2 may be extended from thelower side of the upper surface PS. The second side surface SS2 may bebent at a second bending line BL2. The second bending line BL2 may bethe boundary between the upper surface PS and the second side surfaceSS2. The second side surface SS2 may be a rectangular surface havingshorter sides in the third direction (z-axis direction) and longer sidesin the first direction (x-axis direction) when viewed from the top. Thesecond side surface SS2 may be the lower side surface of the displaypanel 300.

The third side surface SS3 may be extended from the third side of theupper surface PS. The third side surface SS3 may be extended from theupper side of the upper surface PS. The third side surface SS3 may bebent at a third bending line BL3. The third bending line BL3 may be theboundary between the upper surface PS and the third side surface SS2.The third side surface SS3 may be a rectangular surface having shortersides in the third direction (z-axis direction) and longer sides in thefirst direction (x-axis direction) when viewed from the top. The thirdside surface SS3 may be the upper side surface of the display panel 300.

The fourth side surface SS4 may be extended from the fourth side of theupper surface PS. The fourth side surface SS4 may be extended from theright side of the upper surface PS. The fourth side surface SS4 may bebent at a fourth bending line BL4. The fourth bending line BL4 may bethe boundary between the upper surface PS and the fourth side surfaceSS4. The fourth side surface SS4 may be a rectangular surface havingshorter sides in the third direction (z-axis direction) and longer sidesin the second direction (y-axis direction) when viewed from the top. Thefourth side surface SS4 may be the right side surface of the displaypanel 300.

The first corner CS1 may be located or disposed between the first sidesurface SS1 and the second side surface SS2. The width of the firstcorner CS1 may be smaller than the width of the first side surface SS1and the width of the second side surface SS2. Therefore, an empty spaceES may be formed between a part of the first side surface SS1 and a partof the second side surface SS2.

The second corner CS2 may be located or disposed between the first sidesurface SS1 and the third side surface SS3. The width of the secondcorner CS2 may be smaller than the width of the first side surface SS1and the width of the third side surface SS3. Therefore, an empty spaceES may be formed between a part of the first side surface SS1 and a partof the third side surface SS3.

The third corner CS3 may be located or disposed between the second sidesurface SS2 and the fourth side surface SS4. The width of the thirdcorner CS3 may be smaller than the width of the second side surface SS2and the width of the fourth side surface SS4. Therefore, an empty spaceES may be formed between a part of the second side surface SS2 and apart of the fourth side surface SS4.

The fourth corner CS4 may be located or disposed between the third sidesurface SS3 and the fourth side surface SS4. The width of the fourthcorner CS4 may be smaller than the width of the third side surface SS3and the width of the fourth side surface SS4. Therefore, an empty spaceES may be formed between a part of the third side surface SS3 and a partof the fourth side surface SS4.

A pad area PDA may be extended from one side of the second side surfaceSS2. The pad area PDA may be bent at a fifth bending line BL5. The fifthbending line BL5 may be the boundary between the second side surface SS2and the pad area PDA. The pad area PDA may be a rectangular surfacehaving shorter sides in the second direction (y-axis direction) andlonger sides in the first direction (x-axis direction) when viewed fromthe top. The second side surface SS2 may be the lower side surface ofthe display panel 300 that faces the upper surface.

The upper surface PS may include a main display area MDA where a mainimage is displayed. The upper surface PS may not include a non-displayarea, and accordingly the entire upper surface PS may be the maindisplay area MDA.

The first side surface SS1 may include a first sub display area SDA1where a first sub image is displayed, and a first non-display area NDA1.As shown in FIG. 97 , the first non-display area NDA1 may be disposed atthe upper edge, the left edge and the lower edge of the first sidesurface SS1. The first sub display area SDA1 may be extended from theleft side of the main display area MDA. The first sub display area SDA1may be the area of the first side surface SS1 other than the firstnon-display area NDA1.

The second side surface SS2 may include a second sub display area SDA2where a second sub image is displayed, and a second non-display areaNDA2. As shown in FIG. 97 , the second non-display area NDA2 may bedisposed at the left edge, the lower edge and the right edge of thesecond side surface SS2. The second sub display area SDA2 may beextended from the lower side of the main display area MDA. The secondsub display area SDA2 may be the area of the second side surface SS2other than the second non-display area NDA2.

The third side surface SS3 may include a third sub display area SDA3where a third sub image is displayed, and a third non-display area NDA3.As shown in FIG. 97 , the third non-display area NDA3 may be disposed atthe left edge, the upper edge and the right edge of the third sidesurface SS3. The third sub display area SDA3 may be extended from theupper side of the main display area MDA. The third sub display area SDA3may be the area of the third side surface SS3 other than the thirdnon-display area NDA3.

The fourth side surface SS4 may include a fourth sub display area SDA4where a fourth sub image is displayed, and a fourth non-display areaNDA4. As shown in FIG. 97 , the fourth non-display area NDA4 may bedisposed at the upper edge, the right edge and the lower edge of thefourth side surface SS4. The fourth sub display area SDA4 may beextended from the right side of the main display area MDA. The fourthsub display area SDA4 may be the area of the fourth side surface SS4other than the fourth non-display area NDA4.

The first corner CS1, the second corner CS2, the third corner CS3 andthe fourth corner CS4 may be, but is not limited to, the non-displayarea. A part of the first corner CS1, a part of the second corner CS2, apart of the third corner CS3 and a part of the fourth corner CS4 may bethe display area where images are displayed. In such case, a part of thefirst corner CS1, a part of the second corner CS2, a part of the thirdcorner CS3 and a part of the fourth corner CS4 may be extended from themain display area MDA.

In the sensor area TSA, the sensor electrodes are disposed in the sensorelectrode layer SENL so that a user's touch, the presence of a nearbyobject, and the pressure of the user's touch may be sensed. The sensorarea TSA may overlap the main display area MDA, the first sub displayarea SDA1, the second sub display area SDA2, the third sub display areaSDA3, and the fourth sub display area SDA4. The sensor area TSA may besubstantially identical to the sum of the main display area MDA, thefirst sub display area SDA1, the second sub display area SDA2, the thirdsub display area SDA3 and the fourth sub display area SDA4.

In the sensor peripheral area TPA, no sensor electrodes are disposed.The sensor peripheral area TPA may surround the sensor area TSA. Thesensor peripheral area TPA may overlap the first non-display area NDA1,the second non-display area NDA2, the third display area NDA3, thefourth non-display area NDA4, and the pad area PDA. The sensorperipheral area TPA may be substantially identical to the sum of thefirst non-display area NDA1, the second non-display area NDA2, the thirddisplay area NDA3, the fourth non-display area NDA4 and the pad areaPDA.

As shown in FIG. 99 , in the fourth sub display area SDA4 of the fourthside surface SS4, the sensor electrodes SE may be disposed to overlapthe bank 180, and may not overlap the sub-pixels PX. The sensor linesSEL electrically connected to the sensor electrodes SE may be spacedapart from one another by a first distance D1. The first conductivepattern AP may be disposed more to the outside than the sensor linesSEL. For the mutual capacitive sensing, the sensor electrodes SE mayinclude driving electrodes and sensing electrodes, and the sensor linesSEL may include driving lines and sensing lines.

Although the sensor lines SENL are single lines disposed on the firstsensor insulating layer TINS in the example shown in FIG. 99 , thedisclosure is not limited thereto. For example, the sensor lines SENLmay include a first sub sensor line disposed on the second buffer layerBF2 and a second sub sensor line disposed on the first sensor insulatinglayer TINS1. The second sub sensor line may be electrically connected tothe first sub sensor line through a contact hole penetrating the firstsensor insulating layer TINS1 for exposing the first sub sensor line.

It is to be noted that the first side surface SS1, the second sidesurface SS2 and the third side surface SS3 may be formed to besubstantially identical to the fourth side surface shown in FIG. 99 ,instead of the fourth side surface SS4. Alternatively, at least one ofthe first side surface SS1, the second side surface SS2 and the thirdside surface SS3 may be substantially identical to the fourth sidesurface SS4 shown in FIG. 99 .

As shown in FIG. 95 , the first conductive pattern AP for implementingthe antenna may be disposed in the sensor peripheral area TPA includingthe first to fourth non-display areas NDA1, NDA2, NDA3 and NDA4. Thefirst conductive pattern AP may be disposed at the edges of four sidesurfaces of the display panel 300. For example, the first conductivepattern AP may be disposed at the pad area PDA, the second non-displayarea NDA2 of the second side surface SS2, the first corner CS1, thefirst non-display area NDA1 of the first side surface SS1, the secondcorner CS2, the third non-display area NDA3 of the third side surfaceSS3, the fourth corner CS4, the fourth non-display area NDA4 of thefourth side surface SS4, and the third corner CS3. The first conductivepattern AP may be electrically connected to at least one conductive padCP in the pad area PDA. At least one conductive pad CP may beelectrically connected to the display circuit board 310 through ananisotropic conductive film. For convenience of illustration, the sensorpads and the display pads electrically connected to the sensorelectrodes of the sensor electrode layer TSL are not shown in FIG. 95 .

When the first conductive pattern AP is disposed in the sensorperipheral area TPA including the first to fourth non-display areasNDA1, NDA2, NDA3 and NDA4, there is not enough space for forming thefirst conductive pattern AP. Therefore, the first conductive pattern APis preferably formed substantially in the form of a loop or a coil, butis not limited thereto. The first conductive pattern AP may bequadrangular patches.

Although the first conductive pattern AP for implementing the antennamay be disposed in the sensor peripheral area TPA in the example shownin FIG. 95 , but the disclosure is not limited thereto. The firstconductive pattern AP may be disposed in the sensor area TSA as shown inFIGS. 48 to 58 .

FIG. 100 is a development view showing a display panel according to anembodiment. FIG. 101 is a side view showing an example of the displaypanel of FIG. 100 . FIG. 102 is a schematic cross-sectional view showingan example of a part of a fourth side surface of FIG. 100 .

An embodiment shown in FIGS. 101 and 102 is different from an embodimentof FIGS. 95, 98 and 99 in that no image is displayed on one side surfaceof the display panel 300.

Referring to FIGS. 101 and 102 , a fourth side surface SS4 may notinclude a sub display area SDA4 and may include only a fourthnon-display area NDA4. Since the fourth side surface SS4 does notinclude the fourth sub display area SDA4, no image is displayed. Sincethe fourth side surface SS4 may not include the fourth sub display areaSDA4, the sensor area TSA may not be disposed in the fourth side surfaceSS4.

The fourth non-display area NDA4 may include a sensor wiring area TRAelectrically connected to the sensor electrodes of the sensor area TSAoverlapping the main display area MDA, and an antenna area APA where thefirst conductive pattern AP may be formed or disposed.

The sensor wiring area TRA may be extended from the upper surface PS.The sensor wiring area TRA may be disposed on the right side of theupper surface. For the mutual capacitive sensing, the sensor lines SELdisposed in the sensor wiring area TRA may be driving lines or sensinglines.

When the sensor area TSA is not disposed in the fourth side surface SS4,the sensor wiring area TRA and the antenna area APA may be increasedcompared to when the sensor area TSA is disposed in the fourth sidesurface SS4. Therefore, the sensor lines SEL of the sensor wiring areaTRA may be spaced apart from one another by a second distance D2 that islarger than the first distance D1.

The antenna area APA may be the area of the fourth side surface SS4other than the sensor wiring area TRA. The first conductive pattern APmay be formed or disposed in the antenna area APA. In the example shownin FIG. 101 , the first conductive pattern AP may be formed in the formof a substantial loop or a coil. The first conductive pattern AP havinga substantially loop shape or a substantially coil shape may be utilizedas an antenna for an RFID tag for near field communications.Alternatively, the first conductive pattern AP may be as quadrangularpatches as shown in FIG. 104 . The first conductive pattern AP as thequadrangular patches may be utilized as the antenna for mobilecommunications.

The first conductive pattern AP may be made of the same or similarmaterial on a same layer as the sensor lines SEL of the sensor wiringarea TRA. The first conductive pattern AP may be made of the same orsimilar material on a same layer as the sensor electrodes of the sensorarea TSA. For example, the first conductive pattern AP may be disposedon the first sensor insulating layer TINS1 as shown in FIG. 102 .

As shown in FIG. 103 , a second conductive pattern GP may be formed ordisposed in the antenna area APA, which may overlap the first conductivepattern AP in the third direction (z-axis direction) and receive aground voltage. The second conductive pattern GP may be disposed on thesecond buffer layer BF2 and may be covered or overlapped by the firstsensor insulating layer TINS1.

As shown in FIG. 103 , a guard pattern GAP may be formed or disposed inthe antenna area APA, which may be disposed between the first conductivepattern AP and the sensor wiring area TRA. The guard pattern GAP may beelectrically floated or receive a ground voltage. The guard pattern GAPmay be made of the same or similar material on a same layer as the firstconductive pattern AP. Alternatively, the guard pattern GAP may includea first sub guard pattern made of the same or similar material on a samelayer as the second conductive pattern GROUP, and a second sub guardpattern made of the same or similar material on a same layer as thefirst conductive pattern AP.

When the sensor area TSA is not disposed in at least one side surface asshown in FIGS. 100 to 102 , the antenna area may be increased comparedto when the sensor area TSA may be disposed in at least one sidesurface. Therefore, the first conductive pattern AP of the antenna areaAPA may be designed more freely.

It is to be noted that the first side surface SS1, the second sidesurface SS2 and the third side surface SS3 may be formed to besubstantially identical to the fourth side surface shown in FIGS. 101 to104 , instead of the fourth side surface SS4. Alternatively, at leastone of the first side surface SS1, the second side surface SS2 and thethird side surface SS3 may be substantially identical to the fourth sidesurface SS4 shown in FIGS. 101 to 104 .

FIG. 105 is a development view showing a display panel according to anembodiment. FIG. 106 is a side view showing an example of the displaypanel of FIG. 105 . FIG. 107 is a schematic cross-sectional view showingan example of a fourth side surface of FIG. 105 .

An embodiment of FIGS. 105 to 107 is different from an embodiment ofFIGS. 100 and 101 in that through holes TH2 may be formed or disposedthrough a substrate SUB and a display layer DISL in an antenna area APA.

Referring to FIGS. 105 to 107 , the display layer DISL may be disposedon one surface of the substrate SUB, and an antenna module AMD includinga first conductive pattern may be disposed on the opposite surface ofthe substrate SUB.

Because the wavelength of the electromagnetic waves of an antenna isshort in 5G mobile communications, it may be difficult for theelectromagnetic waves of the antenna radiated toward the upper side ofthe display device 10 to pass through the lines and the electrodes ofthe display layer DISL of the display panel 300. For this reason, byforming through holes TH2 in the substrate SUB and the display layerDISL of the display panel 300, it may be possible to reduceelectromagnetic waves of the antenna radiated from the antenna moduleAMD disposed under or below the substrate SUB from being disturbed bythe lines and the electrodes of the display layer DISL disposed on thesubstrate SUB.

It is to be noted that the first side surface SS1, the second sidesurface SS2 and the third side surface SS3 may be formed to besubstantially identical to the fourth side surface shown in FIGS. 105 to107 , instead of the fourth side surface SS4. Alternatively, at leastone of the first side surface SS1, the second side surface SS2 and thethird side surface SS3 may be substantially identical to the fourth sidesurface SS4 shown in FIGS. 105 to 107 .

FIG. 108 is a development view showing a display panel according to anembodiment.

An embodiment of FIG. 108 may be different from an embodiment of FIG.105 in that an antenna area APA may be formed or disposed only on a partof the fourth side surface SS4, in which through holes TH2 may be formedor disposed.

Referring to FIG. 108 , when the antenna area APA may include a firstconductive pattern used for 5G mobile communication, a frequency ofapproximately 28 GHz or approximately 39 GHz may be used as describedabove with reference to FIG. 20 . Accordingly, the area of the firstconductive pattern may not be large. Therefore, the antenna area APA maybe formed or disposed only in a part of the fourth side surface SS4.

In FIG. 108 , the antenna area APA may be disposed on the upper side ofthe fourth side surface SS4, and the fourth sub display area SDA4 andthe fourth non-display area NDA4 may be disposed on the lower side ofthe fourth side surface SS4. It is, however, to be understood that theposition of the antenna area APA, the position of the fourth sub displayarea SDA4, and the position of the fourth non-display area NDA4 in thefourth side surface SS4 are not limited thereto.

It is to be noted that the first side surface SS1, the second sidesurface SS2 and the third side surface SS3 may be formed to besubstantially identical to the fourth side surface shown in FIG. 108 ,instead of the fourth side surface SS4. Alternatively, at least one ofthe first side surface SS1, the second side surface SS2 and the thirdside surface SS3 may be substantially identical to the fourth sidesurface SS4 shown in FIG. 108 .

FIG. 109 is a development view showing a display panel according to anembodiment.

An embodiment of FIG. 109 is different from an embodiment of FIG. 95 inthat through holes TH1 and TH2 are formed or disposed in the sensor areaTAS on the upper surface PS and a side surface of the display panel 300.

Referring to FIG. 109 , a first through hole TH1 may be formed ordisposed in the upper surface PS of the display panel 300. Although thesingle first through hole TH1 is formed or disposed in the upper surfacePS of the display panel 300 in the example of FIG. 109 , the disclosureis not limited thereto. More than one first through holes TH1 may beformed or disposed in the upper surface PS of the display panel 300.Although the first through hole TH1 is disposed on the upper right sideof the upper surface PS of the display panel 300 in the example shown inFIG. 109 , the position of the first through hole TH1 is not limitedthereto.

The second through hole TH2 may be formed or disposed in one sidesurface of the display panel 300. For example, the second through holeTH2 may be formed or disposed in the fourth side surface SS4 of thedisplay panel 300. Although the single second through hole TH2 may beformed or disposed in the upper surface PS of the display panel 300 inthe example of FIG. 109 , the disclosure is not limited thereto. Morethan one second through holes TH2 may be formed or disposed in the uppersurface PS of the display panel 300. Although the second through holeTH2 is disposed on the upper left side of the upper surface PS of thedisplay panel 300 in the example shown in FIG. 109 , the position of thesecond through hole TH2 is not limited thereto. Although the size of thesecond through hole TH2 is larger than that of the first through holeTH1 in the example shown in FIG. 109 , the size of the second throughhole TH2 is not limited thereto.

Although the through holes TH1 and TH2 may be formed or disposed in theupper surface PS and one side surface of the display panel 300 in theexample of FIG. 109 , the disclosure is not limited thereto. Forexample, at least one through hole may be formed or disposed in theupper surface PS and at least one of the four side surfaces SS1, SS2,SS3 and SS4 of the display panel 300.

A dead space and a wiring area may be disposed around each of thethrough holes TH1 and TH2 formed or disposed in the upper surface PS andone side surface the upper surface PS of the display panel 300. A firstconductive pattern for implementing the antenna may be formed ordisposed in a part of the wiring area as shown in FIGS. 60 to 64 .

FIG. 110 is a development view showing a display panel according to anembodiment. FIG. 111 is a schematic cross-sectional view showing anexample of a display panel according to an embodiment. FIG. 112 is aschematic cross-sectional view showing a sensor electrode layer of anupper surface and an antenna layer of a first side surface of FIG. 111 .

An embodiment of FIGS. 110 to 112 may be different from an \embodimentof FIG. 95 in that an antenna layer APL including a first conductivepattern AP may be formed or disposed on at least one of the sidesurfaces SS1, SS2, SS3 and SS4.

Referring to FIGS. 110 to 112 , a display layer DISL may be disposed ona surface of the first side surface SS1, and the antenna layer APLincluding the first conductive pattern AP may be disposed on the displaylayer DISL. Although the antenna layer APL is disposed on the first sidesurface SS1 in the example shown in FIG. 11 , the disclosure is notlimited thereto. For example, the antenna layer APL may be formed ordisposed on at least one of the side surfaces SS1, SS2, SS3 and SS4.When the area of the first conductive pattern AP is large, it may beformed or disposed in some of the side surfaces SS1, SS2, SS3 and SS4.When the area of the first conductive pattern AP is small, it may beformed or disposed in one of the side surfaces SS1, SS2, SS3 and SS4 oron only one of the side surfaces SS1, SS2, SS3 and SS4. Although thesensor electrode layer SENL may be disposed on the upper surface PS inthe example shown in FIG. 11 , the disclosure is not limited thereto.For example, the sensor electrode layer SENL may be disposed in at leastone of the side surfaces SS1, SS2, SS3 and SS4 where the antenna layerAPL may not be disposed. As shown in FIG. 111 , since the sensorelectrode layer SENL may not be disposed in the side surface where theantenna layer APL may be disposed, the antenna layer APL may be designedmore freely from the sensor electrode layer SENL in the side surface.

The antenna layer APL may be the same layer as the sensor electrodelayer SENL as shown in FIG. 111 . The first conductive pattern AP of theantenna layer APL may be made of the same or similar material on a samelayer as the sensor electrodes SE of the sensor electrode layer SENL.For example, the first conductive pattern AP of the antenna layer APLmay be disposed on the first sensor insulating layer TINS1 as shown inFIG. 112 . In this instance, a second conductive pattern GP may bedisposed on the second buffer layer BF2, which overlaps the firstconductive pattern AP in the third direction (z-axis direction) andreceives a ground voltage. As shown in FIG. 112 , the first conductivepattern AP is made of the same or similar material on a same layer asthe sensor electrodes SE of the sensor electrode layer SENL, and thusthe first conductive pattern AP may be formed without any additionalprocess.

The first conductive pattern AP may be formed in a substantially loopshape or a substantially coil shape, or as quadrangular patches. Theantenna implemented with the first conductive pattern AP having asubstantially loop shape or a substantially coil shape may be utilizedas an antenna for an RFID tag for near field communications. The antennaimplemented with the first conductive pattern AP having rectangularpatches may be utilized as an antenna for mobile communications.

A force sensor FOS for sensing a user's touch input or a user's pressuremay be disposed in the side surface where the antenna layer APL isdisposed and the sensor electrode layer SENL is not disposed. The forcesensor FOS may include a strain-gauge force sensor, a capacitive forcesensor, a gap-cap type force sensor, or a force sensor including metalmicroparticles such as quantum tunneling composite (QTC) force sensor.The force sensor FOS including the strain gauge may be similar to thatdescribed above with reference to FIGS. 43 to 45 and 54 . A schematiccross-sectional structure of the force sensor FOS of a gap-cap type andthe force sensor FOS including a pressure sensing layer will bedescribed later with reference to FIG. 113 .

The force sensor FOS may be disposed on the opposite surface of thefirst side surface SS1. The force sensor FOS may be attached to theother surface of the first side surface SS1 using a pressure sensitiveadhesive. The force sensor FOS may be disposed between the display panel300 and the bracket 600. The bracket 600 may work as a supporting memberfor supporting the force sensors FOS. The force sensor FOS may beattached to the bracket 600 using a pressure sensitive adhesive.

FIG. 113 is a schematic cross-sectional view showing an example of theforce sensor of FIG. 111 . In the example shown in FIG. 113 , a forcesensor FOS includes a pressure sensing layer PSL.

Referring to FIG. 113 , the force sensor FOS may include a first basemember BS1, a second base member BS2, a driving electrode TE, a sensingelectrode RE, and a pressure sensing layer PSL.

The first base member BS1 and the second base member BS2 are disposed toface each other. Each of the first base member BS1 and the second basemember BS2 may be made of a polyethylene terephthalate (PET) film or apolyimide film.

The driving electrodes TE1 and the sensing electrodes RE1 are disposedadjacent to each other but are not electrically connected to each other.The driving electrodes TE and the sensing electrodes RE may be arrangedor disposed in parallel. The driving electrodes TE and the sensingelectrodes RE may be arranged or disposed alternately. For example, thedriving electrodes TE and the sensing electrodes RE may be repeatedlyarranged or disposed in the order of the driving electrode TE, thesensing electrode RE, the driving electrode TE, the sensing electrodeRE, within the spirit and the scope of the disclosure.

The driving electrodes TE and the sensing electrodes RE may include aconductive material such as silver (Ag) and copper (Cu). The drivingelectrodes TE and the sensing electrodes RE may be formed or disposed onthe first substrate SUB1 by screen printing.

The pressure sensing layer PSL is disposed on the surface of the secondsubstrate SUB2 facing the first substrate SUB1. The pressure sensinglayer PSL may be disposed such that it overlaps with the drivingelectrodes TE and the sensing electrodes RE.

The pressure sensing layer PSL may include a polymer resin having apressure sensitive material. The pressure sensitive material may bemetal microparticles (or metal nanoparticles) such as nickel, aluminum,titanium, tin and copper. For example, the pressure sensing layer PSLmay be a quantum tunneling composite (QTC).

When no pressure is applied to the second substrate SUB2 in the heightdirection (z-axis direction) of the force sensor FOS, there is a gapbetween the pressure sensing layer PSL and the driving electrode TE1 andbetween the pressure sensing layer PSL and the sensing electrodes RE1.For example, when no pressure is applied to the second substrate SUB2,the pressure sensing layer PSL may be spaced apart from the drivingelectrodes TE and the sensing electrodes RE.

When a pressure is applied to the second substrate SUB2 in the heightdirection (z-axis direction) of the force sensor FOS, the pressuresensing layer PSL may contact the driving electrodes TE and the sensingelectrodes RE. In this case, at least one of the driving electrodes TE1and at least one of the sensing electrodes RE1 may be physicallyconnected with one another through the pressure sensing layer PSL, andthe pressure sensing layer PSL may work as an electrical resistance.

Therefore, since the area in which the pressure sensing layer PSL isbrought into contact with the driving electrodes TE and the sensingelectrodes RE varies depending on the applied pressure, the resistanceof the sensing electrodes RE may vary. For example, as the pressureapplied to the force sensor FOS increases, the resistance of the sensingelectrodes RE may decrease. A pressure sensing unit may sense a changein current value or a voltage value from the sensing electrodes RE basedon a change in the resistance, thereby determining the pressure that theuser presses by a finger. Therefore, the force sensor FOS may be used asthe input device for sensing a user's input.

One of the first base member BS1 and the second base member BS2 of theforce sensor FOS may be attached to the other surface of the first sidesurface SS1 of the substrate via a pressure sensitive adhesive, whilethe other may be attached to the bracket 600 via a pressure sensitiveadhesive.

Alternatively, one of the first base member BS1 and the second basemember BS2 of the force sensor FOS may be eliminated. For example, whenthe first base member BS1 of the force sensor FOS is eliminated, thedriving electrodes TE and the sensing electrodes RE may be disposed onone surface or the other surface of the first side surface SS1. Forexample, the force sensor FOS may use the first side surface SS1 of thedisplay panel 300 as a base member. If the driving electrodes TE and thesensing electrodes RE are disposed on one surface of the first sidesurface SS1, the driving electrodes TE and the sensing electrodes RE maybe made of the same or similar material on a same layer as thelight-blocking layer BML1 of the display layer DISL.

Alternatively, when the first base member BS1 of the force sensor FOS iseliminated, the driving electrodes TE and the sensing electrodes RE maybe disposed on the bracket 600. In other words, the force sensor FOS mayuse the bracket 600 as the base member.

Alternatively, if the second base member BS2 of the force sensor FOS iseliminated, the pressure sensing layer PSL may be disposed on the othersurface of the first side surface SS1. For example, the force sensor FOSmay use the first side surface SS1 of the display panel 300 as the basemember.

Alternatively, if the second base member BS2 of the force sensor FOS iseliminated, the pressure sensing layer PSL may be disposed on thebracket 600. In other words, the force sensor FOS may use the bracket600 as the base member.

In the example shown in FIG. 113 , a ground potential layer may bedisposed in place of the pressure sensing layer PSL, in which case, theforce sensor FOS may sense a user's touch pressure by gap-cap manner.Specifically, according to the gap-cap manner, the first base member BS1and the second base member BS2 may be bent according to the pressureapplied from the user, and thus the distance between the groundpotential layer and the driving electrodes TE or the sensing electrodesRE may be decreased. As a result, the voltage charged in the capacitancebetween the driving electrodes TE and the sensing electrodes RE may bedecreased due to the ground potential layer. Therefore, according to thegap-cap manner, the pressure of the user's touch may be sensed byreceiving the voltage charged in the capacitance through the sensingelectrodes RE.

When the force sensor FOS of the gap-cap manner is disposed on four sidesurfaces SS1, SS2, SS3 and SS4 as shown in FIG. 111 , the first basemember BS1 and the second base member BS2 of the force sensor FOS may bebent less in the four side surfaces SS1, SS2, SS3 and SS4. Accordingly,in order to more effectively sense the pressure of a user's touch, aforce sensor FOS of the gap-cap manner disposed in the first sidesurface SS1 may operate together with a force sensor FOS of the gap-capmanner disposed in the fourth side surface SS4 facing the first sidesurface SS1. According to the gap-cap manner, a force sensor FOSdisposed in the second side surface SS2 may operate together with aforce sensor FOS disposed in the third side surface SS3 facing thesecond side surface SS2.

FIG. 114 is a schematic cross-sectional view showing an example of theforce sensor of FIG. 111 .

An embodiment of FIG. 114 may be different from an embodiment of FIG.113 in that an antenna layer APL may be disposed on a force sensor FOS.

Referring to FIG. 114 , a first conductive pattern AP may be formed ordisposed on the second base member BS2 of the force sensor FOS, and apassivation layer PAS may be formed or disposed on the first conductivepattern AP. The first conductive pattern AP may include a conductivematerial such as silver (Ag) and copper (Cu). The passivation layer PASmay be formed of an inorganic layer, for example, a silicon nitridelayer, a silicon oxynitride layer, a silicon oxide layer, a titaniumoxide layer, or an aluminum oxide layer.

As shown in FIG. 114 , since the antenna layer APL is disposed on theforce sensor FOS, the force sensor FOS may be integrated with theantenna layer APL. The antenna layer APL disposed on the display layerDISL may be eliminated.

FIG. 115 is a schematic cross-sectional view showing an example of theforce sensor of FIG. 111 .

An embodiment of FIG. 115 may be different from an embodiment of FIG.113 in that an antenna layer APL may be disposed on a pressure sensinglayer PSL of a force sensor FOS.

Referring to FIG. 115 , the second base member BS2 of the force sensorFOS may be eliminated, a first conductive pattern AP may be formed ordisposed on the pressure sensing layer PSL, and a passivation layer PASmay be formed or disposed on the first conductive pattern AP.

As shown in FIG. 115 , since the antenna layer APL is disposed on thepressure sensing layer PSL of the force sensor FOS, the force sensor FOSmay be integrated with the antenna layer APL. The antenna layer APLdisposed on the display layer DISL may be eliminated.

FIG. 116 is a schematic cross-sectional view showing an example of afirst side surface of a display panel according to an embodiment.

An embodiment of FIG. 116 may be different from an embodiment of FIG.112 in that an ultrasonic sensor US may be disposed in the first sidesurface SS1 in place of the force sensor FOS.

Referring to FIG. 116 , the ultrasonic sensor US may be either anultrasonic fingerprint recognition sensor that recognizes a user'sfingerprint using ultrasonic waves or an ultrasonic proximity sensorthat detects a nearby object using ultrasonic waves. The ultrasonicsensor US may be disposed on the other surface of the first side surfaceSS1. The ultrasonic sensor US may be attached to the other surface ofthe first side surface SS1 using a pressure sensitive adhesive. Theultrasonic sensor US may overlap the first conductive pattern AP of theantenna layer APL in the thickness direction of the substrate SUB.

Although the ultrasonic sensor US is disposed on the first side surfaceSS1 in the example shown in FIG. 116 , the disclosure is not limitedthereto. The ultrasonic sensor US may be disposed on the upper surfacePS and at least one of the first to fourth side surfaces SS1, SS2, SS3and SS4.

While embodiments are described above, it is not intended that theseembodiments describe all possible forms thereof. Rather, the words usedin the specification are words of description rather than limitation,and it is understood that various changes may be made without departingfrom the spirit and scope of the of the disclosure. The features ofvarious embodiments may be combined to form further embodiments.

What is claimed is:
 1. A display panel comprising: a first electrode anda second electrode disposed on a substrate and spaced apart from eachother; a first contact electrode electrically connected to the firstelectrode; a second contact electrode electrically connected to thesecond electrode; a light-emitting element disposed between the firstcontact electrode and the second contact electrode; and a firstconductive pattern that does not overlap the light-emitting element in athickness direction of the substrate, wherein the first conductivepattern is an antenna.
 2. The display panel of claim 1, furthercomprising: a first insulating layer disposed on a part of the firstelectrode and the second electrode; a second insulating layer disposedon the light-emitting element; and a third insulating layer disposed onthe first contact electrode, wherein the first contact electrode aredisposed on the first insulating layer and the second insulating layer,and the second contact electrode is disposed on the first insulatinglayer, the second insulating layer, and the third insulating layer. 3.The display panel of claim 2, wherein the first conductive pattern andthe second contact electrode are disposed on a same layer.
 4. Thedisplay panel of claim 2, wherein the first conductive pattern isdisposed on the third insulating layer.
 5. The display panel of claim 2,wherein the first conductive pattern and the first contact electrode aredisposed on a same layer.
 6. The display panel of claim 2, wherein thefirst conductive pattern is disposed on the first insulating layer, andthe third insulating layer is disposed on the first conductive pattern.7. The display panel of claim 2, wherein the first conductive pattern,the first electrode, and the second electrode are disposed on a samelayer.
 8. The display panel of claim 2, wherein the first conductivepattern is disposed on the substrate, and the first insulating layer isdisposed on the first conductive pattern.
 9. The display panel of claim2, further comprising: a connection pattern disposed on the firstinsulating layer and connected to the first conductive pattern through acontact hole penetrating the first insulating layer.
 10. The displaypanel of claim 9, further comprising: another first conductive patterndisposed on a same layer as the first conductive pattern and connectedto the connection pattern.
 11. The display panel of claim 2, furthercomprising: a connection pattern disposed on the second insulating layerand connected to the first conductive pattern through a contact holepenetrating the first insulating layer and the second insulating layer.12. The display panel of claim 2, further comprising: a shieldingelectrode disposed on the first insulating layer, wherein the firstconductive pattern is disposed on a same layer as the shieldingelectrode.
 13. The display panel of claim 12, wherein the shieldingelectrode is connected to the first contact electrode.
 14. The displaypanel of claim 2, further comprising: an organic layer disposed on thesecond contact electrode and the third insulating layer, wherein thefirst conductive pattern is disposed on the organic layer.
 15. Thedisplay panel of claim 14, wherein the first conductive patterncomprises slits.
 16. The display panel of claim 1, further comprising: afirst insulating layer disposed on a part of the first electrode and thesecond electrode; a second insulating layer disposed on thelight-emitting element; and a third insulating layer disposed on thefirst contact electrode and the second contact electrode, wherein thefirst contact electrode and the second contact electrode are disposed onthe first insulating layer and the second insulating layer,respectively.
 17. The display panel of claim 16, wherein the firstconductive pattern, the first contact electrode, and the second contactelectrode are disposed on a same layer.
 18. The display panel of claim16, wherein the first conductive pattern is disposed on the firstinsulating layer.
 19. The display panel of claim 16, wherein the firstconductive pattern is disposed on the substrate, and the firstinsulating layer is disposed on the first conductive pattern.
 20. Thedisplay panel of claim 16, further comprising: a connection patterndisposed on the first insulating layer and connected to the firstconductive pattern through a contact hole penetrating the firstinsulating layer.
 21. The display panel of claim 20, further comprising:another first conductive pattern disposed on a same layer as the firstconductive pattern and connected to the connection pattern.